JMnic Product Specification 2SB1230 Silicon PNP Power Transistors DESCRIPTION ・With TO-3PN package ・Wide area of safe operation ・Complement to type 2SD1840 ・Low collector saturation voltage APPLICATIONS ・Motor drivers,relay drivers,converters and other general high-current switching applications PINNING PIN DESCRIPTION 1 Base 2 Collector;connected to mounting base 3 Emitter Fig.1 simplified outline (TO-3PN) and symbol Absolute maximum ratings(Tc=25℃) SYMBOL PARAMETER CONDITIONS VALUE UNIT VCBO Collector-base voltage Open emitter -110 V VCEO Collector-emitter voltage Open base -100 V VEBO Emitter-base voltage Open collector -6 V IC Collector current -15 A ICM Collector current -peak -25 A IB Base current -5 A PC Collector power dissipation Ta=25℃ 3.0 W TC=25℃ 100 Tj Junction temperature 150 ℃ Tstg Storage temperature -55~150 ℃ JMnic Product Specification 2SB1230 Silicon PNP Power Transistors CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER V(BR)CEO Collector-emitter breakdown voltage IC=-5mA;RBE=∞ -100 V V(BR)CBO Collector-base breakdown voltage IC=-1mA; IE=0 -110 V V(BR)EBO Emitter-base breakdown voltage IE=-1mA; IC=0 -6 V VCEsat Collector-emitter saturation voltage IC=-6A; IB=-0.6A -0.8 V VBE sat Base-emitter saturation voltage IC=-6A; IB=-0.6A -1.5 V ICBO Collector cut-off current VCB=-100V; IE=0 -100 μA IEBO Emitter cut-off current VEB=-5V; IC=0 -100 μA hFE-1 DC current gain IC=-1.5A ; VCE=-2V 50 hFE-2 DC current gain IC=-6A ; VCE=-2V 20 CONDITIONS hFE-1 Classifications P Q 50-100 70-140 2 MIN TYP. MAX 140 UNIT JMnic Product Specification 2SB1230 Silicon PNP Power Transistors PACKAGE OUTLINE Fig.2 outline dimensions 3