JMNIC 2SB1230

JMnic
Product Specification
2SB1230
Silicon PNP Power Transistors
DESCRIPTION
・With TO-3PN package
・Wide area of safe operation
・Complement to type 2SD1840
・Low collector saturation voltage
APPLICATIONS
・Motor drivers,relay drivers,converters
and other general high-current switching
applications
PINNING
PIN
DESCRIPTION
1
Base
2
Collector;connected to
mounting base
3
Emitter
Fig.1 simplified outline (TO-3PN) and symbol
Absolute maximum ratings(Tc=25℃)
SYMBOL
PARAMETER
CONDITIONS
VALUE
UNIT
VCBO
Collector-base voltage
Open emitter
-110
V
VCEO
Collector-emitter voltage
Open base
-100
V
VEBO
Emitter-base voltage
Open collector
-6
V
IC
Collector current
-15
A
ICM
Collector current -peak
-25
A
IB
Base current
-5
A
PC
Collector power dissipation
Ta=25℃
3.0
W
TC=25℃
100
Tj
Junction temperature
150
℃
Tstg
Storage temperature
-55~150
℃
JMnic
Product Specification
2SB1230
Silicon PNP Power Transistors
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL
PARAMETER
V(BR)CEO
Collector-emitter breakdown voltage
IC=-5mA;RBE=∞
-100
V
V(BR)CBO
Collector-base breakdown voltage
IC=-1mA; IE=0
-110
V
V(BR)EBO
Emitter-base breakdown voltage
IE=-1mA; IC=0
-6
V
VCEsat
Collector-emitter saturation voltage
IC=-6A; IB=-0.6A
-0.8
V
VBE sat
Base-emitter saturation voltage
IC=-6A; IB=-0.6A
-1.5
V
ICBO
Collector cut-off current
VCB=-100V; IE=0
-100
μA
IEBO
Emitter cut-off current
VEB=-5V; IC=0
-100
μA
hFE-1
DC current gain
IC=-1.5A ; VCE=-2V
50
hFE-2
DC current gain
IC=-6A ; VCE=-2V
20
‹
CONDITIONS
hFE-1 Classifications
P
Q
50-100
70-140
2
MIN
TYP.
MAX
140
UNIT
JMnic
Product Specification
2SB1230
Silicon PNP Power Transistors
PACKAGE OUTLINE
Fig.2 outline dimensions
3