ISC 2SB1005

Inchange Semiconductor
Product Specification
2SB1005
Silicon PNP Power Transistors
DESCRIPTION
・With TO-220C package
・High DC Current Gain
・DARLINGTON
APPLICATIONS
・For audio frequency power amplifier
applications
PINNING
PIN
DESCRIPTION
1
Base
2
Collector; connected to
mounting base
3
Emitter
Absolute maximum ratings(Ta=25℃)
SYMBOL
PARAMETER
CONDITIONS
VALUE
UNIT
VCBO
Collector-base voltage
Open emitter
-50
V
VCEO
Collector-emitter voltage
Open base
-50
V
VEBO
Emitter-base voltage
Open collector
-5
V
IC
Collector current-DC
-4
A
PC
Collector power dissipation
30
W
Tj
Junction temperature
150
℃
Tstg
Storage temperature
-55~150
℃
TC=25℃
Inchange Semiconductor
Product Specification
2SB1005
Silicon PNP Power Transistors
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL
PARAMETER
V(BR)CEO
Collector-emitter breakdown voltage
IC=-30mA, IB=0
-50
V
V(BR)CBO
Collector-base breakdown voltage
IC=-1mA, IE=0
-50
V
VCEsat
Collector-emitter saturation voltage
IC=-1.5A ,IB=-30mA
-2.5
V
VCEsat
Collector-emitter saturation voltage
IC=-4A ,IB=-40mA
-4.0
V
ICBO
Collector cut-off current
VCB=-50V, IE=0
-0.1
mA
IEBO
Emitter cut-off current
VEB=-5V; IC=0
-2.0
mA
hFE-1
DC current gain
IC=-1.5A ; VCE=-3V
750
hFE-2
DC current gain
IC=-4A ; VCE=-3V
100
Diode forward voltage
IF=-4A
3.5
V
VF
CONDITIONS
2
MIN
TYP.
MAX
UNIT
Inchange Semiconductor
Product Specification
2SB1005
Silicon PNP Power Transistors
PACKAGE OUTLINE
Fig.2 Outline dimensions
3