Inchange Semiconductor Product Specification 2SB1005 Silicon PNP Power Transistors DESCRIPTION ・With TO-220C package ・High DC Current Gain ・DARLINGTON APPLICATIONS ・For audio frequency power amplifier applications PINNING PIN DESCRIPTION 1 Base 2 Collector; connected to mounting base 3 Emitter Absolute maximum ratings(Ta=25℃) SYMBOL PARAMETER CONDITIONS VALUE UNIT VCBO Collector-base voltage Open emitter -50 V VCEO Collector-emitter voltage Open base -50 V VEBO Emitter-base voltage Open collector -5 V IC Collector current-DC -4 A PC Collector power dissipation 30 W Tj Junction temperature 150 ℃ Tstg Storage temperature -55~150 ℃ TC=25℃ Inchange Semiconductor Product Specification 2SB1005 Silicon PNP Power Transistors CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER V(BR)CEO Collector-emitter breakdown voltage IC=-30mA, IB=0 -50 V V(BR)CBO Collector-base breakdown voltage IC=-1mA, IE=0 -50 V VCEsat Collector-emitter saturation voltage IC=-1.5A ,IB=-30mA -2.5 V VCEsat Collector-emitter saturation voltage IC=-4A ,IB=-40mA -4.0 V ICBO Collector cut-off current VCB=-50V, IE=0 -0.1 mA IEBO Emitter cut-off current VEB=-5V; IC=0 -2.0 mA hFE-1 DC current gain IC=-1.5A ; VCE=-3V 750 hFE-2 DC current gain IC=-4A ; VCE=-3V 100 Diode forward voltage IF=-4A 3.5 V VF CONDITIONS 2 MIN TYP. MAX UNIT Inchange Semiconductor Product Specification 2SB1005 Silicon PNP Power Transistors PACKAGE OUTLINE Fig.2 Outline dimensions 3