ISC 2SD799

Inchange Semiconductor
Product Specification
2SD799
Silicon NPN Power Transistors
DESCRIPTION
・With TO-220 package
・High DC current gain
・DARLINGTON
APPLICATIONS
・Igniter applications
・High voltage switching applications
PINNING
PIN
DESCRIPTION
1
Base
2
Collector;connected to
mounting base
3
Emitter
Absolute maximum ratings(Ta=25℃)
SYMBOL
PARAMETER
CONDITIONS
VALUE
UNIT
VCBO
Collector-base voltage
Open emitter
600
V
VCEO
Collector-emitter voltage
Open base
400
V
VEBO
Emitter-base voltage
Open collector
5
V
IC
Collector current
6
A
IB
Base current
1
A
PC
Collector power dissipation
30
W
Tj
Junction temperature
150
℃
Tstg
Storage temperature
-55~150
℃
TC=25℃
Inchange Semiconductor
Product Specification
2SD799
Silicon NPN Power Transistors
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
V(BR)CEO
Collector-emitter breakdown voltage
IC=10mA ; IB=0
VCEsat
Collector-emitter saturation voltage
IC=4A ;IB=0.04A
2.0
V
VBEsat
Base-emitter saturation voltage
IC=4A; IB=0.04A
2.5
V
ICBO
Collector cut-off current
VCB=600V; IE=0
0.5
mA
IEBO
Emitter cut-off current
VEB=5V; IC=0
3.0
mA
hFE-1
DC current gain
IC=2A ; VCE=2V
600
hFE-2
DC current gain
IC=4A ; VCE=2V
100
VECF
Diode forward voltage
IE=4A; IB=0
3.0
V
COB
Collector output capacitance
f=1MHz;VCB=50V
2
MIN
TYP.
MAX
400
UNIT
V
35
pF
Inchange Semiconductor
Product Specification
2SD799
Silicon NPN Power Transistors
PACKAGE OUTLINE
Fig.2 Outline dimensions
3