Inchange Semiconductor Product Specification 2SA1108 Silicon PNP Power Transistors DESCRIPTION ·With MT-200 package ·High power dissipation APPLICATIONS ·For power amplifier applications PINNING(see Fig.2) PIN DESCRIPTION 1 Base 2 Collector;connected to mounting base 3 Emitter Fig.1 simplified outline (MT-200) and symbol Absolute maximum ratings(Ta=25℃) SYMBOL PARAMETER CONDITIONS VALUE UNIT VCBO Collector-base voltage Open emitter -130 V VCEO Collector-emitter voltage Open base -130 V VEBO Emitter-base voltage Open collector -5 V IC Collector current -12 A IB Base current -1.2 A PC Collector power dissipation 120 W Tj Junction temperature 150 ℃ Tstg Storage temperature -55~150 ℃ B TC=25℃ Inchange Semiconductor Product Specification 2SA1108 Silicon PNP Power Transistors CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER V(BR)CEO Collector-emitter breakdown voltage IC=-25mA ; IB=0 -130 V V(BR)EBO Emitter-base breakdown voltage IE=-1mA ; IC=0 -5 V Collector-emitter saturation voltage IC=-5A ;IB=-0.5A -2.0 V VBE Base-emitter on voltage IC=-5A ; VCE=-5V -2.0 V ICBO Collector cut-off current VCB=-130V; IE=0 -5 μA IEBO Emitter cut-off current VEB=-5V; IC=0 -5 μA hFE-1 DC current gain IC=-2A ; VCE=-5V 55 hFE-2 DC current gain IC=-5A ; VCE=-5V 35 Transition frequency IC=-1A ; VCE=-10V VCEsat fT CONDITIONS B MIN TYP. B 2 MAX UNIT 160 60 MHz Inchange Semiconductor Product Specification 2SA1108 Silicon PNP Power Transistors PACKAGE OUTLINE Fig.2 outline dimensions 3