ISC 2SA1108

Inchange Semiconductor
Product Specification
2SA1108
Silicon PNP Power Transistors
DESCRIPTION
·With MT-200 package
·High power dissipation
APPLICATIONS
·For power amplifier applications
PINNING(see Fig.2)
PIN
DESCRIPTION
1
Base
2
Collector;connected to
mounting base
3
Emitter
Fig.1 simplified outline (MT-200) and symbol
Absolute maximum ratings(Ta=25℃)
SYMBOL
PARAMETER
CONDITIONS
VALUE
UNIT
VCBO
Collector-base voltage
Open emitter
-130
V
VCEO
Collector-emitter voltage
Open base
-130
V
VEBO
Emitter-base voltage
Open collector
-5
V
IC
Collector current
-12
A
IB
Base current
-1.2
A
PC
Collector power dissipation
120
W
Tj
Junction temperature
150
℃
Tstg
Storage temperature
-55~150
℃
B
TC=25℃
Inchange Semiconductor
Product Specification
2SA1108
Silicon PNP Power Transistors
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL
PARAMETER
V(BR)CEO
Collector-emitter breakdown voltage
IC=-25mA ; IB=0
-130
V
V(BR)EBO
Emitter-base breakdown voltage
IE=-1mA ; IC=0
-5
V
Collector-emitter saturation voltage
IC=-5A ;IB=-0.5A
-2.0
V
VBE
Base-emitter on voltage
IC=-5A ; VCE=-5V
-2.0
V
ICBO
Collector cut-off current
VCB=-130V; IE=0
-5
μA
IEBO
Emitter cut-off current
VEB=-5V; IC=0
-5
μA
hFE-1
DC current gain
IC=-2A ; VCE=-5V
55
hFE-2
DC current gain
IC=-5A ; VCE=-5V
35
Transition frequency
IC=-1A ; VCE=-10V
VCEsat
fT
CONDITIONS
B
MIN
TYP.
B
2
MAX
UNIT
160
60
MHz
Inchange Semiconductor
Product Specification
2SA1108
Silicon PNP Power Transistors
PACKAGE OUTLINE
Fig.2 outline dimensions
3