Inchange Semiconductor Product Specification 2SD531 Silicon NPN Power Transistors ・ DESCRIPTION ・With TO-220C package ・High current capability APPLICATIONS ・For audio frequency power amplifier applications PINNING PIN DESCRIPTION 1 Base 2 Collector;connected to mounting base 3 Emitter Absolute maximum ratings(Tc=25℃) SYMBOL PARAMETER CONDITIONS VALUE UNIT VCBO Collector-base voltage Open emitter 100 V VCEO Collector-emitter voltage Open base 90 V VEBO Emitter-base voltage Open collector 8 V 5 A 43 W IC Collector current PC Collector power dissipation Tj Junction temperature 150 ℃ Tstg Storage temperature -55~150 ℃ TC=25℃ Inchange Semiconductor Product Specification 2SD531 Silicon NPN Power Transistors CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER V(BR)CEO Collector-emitter breakdown voltage IC=50mA; RBE=∞ 90 V V(BR)CBO Collector-base breakdown voltage IC=5mA; IE=0 100 V V(BR)EBO Emitter-base breakdown votage IE=5mA; IC=0 8 V Collector-emitter saturation voltage IC=4A;IB=0.4 A 2.0 V ICBO Collector cut-off current VCB=100V; IE=0 0.1 mA IEBO Emitter cut-off current VEB=6V; IC=0 0.1 mA hFE DC current gain IC=0.1A ; VCE=2V VCEsat CONDITIONS 2 MIN 60 TYP. MAX UNIT Inchange Semiconductor Product Specification 2SD531 Silicon NPN Power Transistors PACKAGE OUTLINE Fig.2 Outline dimensions (unindicated tolerance:±0.10 mm) 3