ISC 2SD1638

Inchange Semiconductor
Product Specification
2SD1638
Silicon NPN Power Transistors
・
DESCRIPTION
・With TO-126 package
・DARLINGTON
APPLICATIONS
・For low frequency and power
amplifier applications
PINNING(see Fig.2)
PIN
DESCRIPTION
1
Emitter
2
Collector;connected to
mounting base
3
Base
Absolute maximum ratings(Ta=25℃)
SYMBOL
PARAMETER
CONDITIONS
VALUE
UNIT
VCBO
Collector-base voltage
Open emitter
100
V
VCEO
Collector-emitter voltage
Open base
100
V
VEBO
Emitter-base voltage
Open collector
5
V
IC
Collector current (DC)
2
A
PD
Total power dissipation
10
W
Tj
Junction temperature
150
℃
Tstg
Storage temperature
-55~150
℃
TC=25℃
Inchange Semiconductor
Product Specification
2SD1638
Silicon NPN Power Transistors
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
V(BR)CEO
Collector-emitter breakdown voltage
IC=25mA; IB=0
VCEsat
Collector-emitter saturation voltage
IC=1.0A ;IB=1mA
1.5
V
VBEsat
Base-emitter saturation voltage
IC=1.0A ;IB=1mA
2.0
V
ICEO
Collector cut-off current
VCE=100V; IB=0
0.5
mA
ICBO
Collector cut-off current
VCB=100V; IE=0
10
μA
IEBO
Emitter cut-off current
VEB=5V; IC=0
3
mA
hFE
DC current gain
IC=1A ; VCE=2V
COB
Collector output capacitance
f=0.1MHz ; VCB=10V
2
MIN
TYP.
MAX
100
UNIT
V
1000
10000
25
pF
Inchange Semiconductor
Product Specification
2SD1638
Silicon NPN Power Transistors
PACKAGE OUTLINE
Fig.2 Outline dimensions
3