Inchange Semiconductor Product Specification 2SA1120 Silicon PNP Power Transistors · DESCRIPTION ·With TO-126 package ·High transition frequency ·Low collector saturation voltage APPLICATIONS ·Audio power amplifier applications PINNING PIN DESCRIPTION 1 Emitter 2 Collector;connected to mounting base 3 Base Absolute maximum ratings(Ta=25℃) SYMBOL PARAMETER CONDITIONS VALUE UNIT VCBO Collector-base voltage Open emitter -35 V VCEO Collector-emitter voltage Open base -35 V VEBO Emitter-base voltage Open collector -6 V IC Collector current -5 A IB Base current -1 A PD Ta=25℃ 1.5 TC=25℃ 5 Total power dissipation W Tj Junction temperature 150 ℃ Tstg Storage temperature -55～+150 ℃ Inchange Semiconductor Product Specification 2SA1120 Silicon PNP Power Transistors CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS V(BR)CEO Collector-emitter breakdown voltage IC=-10mA ;IB=0 VCEsat Collector-emitter saturation voltage IC=-4A; IB=-0.1A -1.0 V VBE Base-emitter on voltage IC=-4A ; VCE=-2V -1.5 V ICBO Collector cut-off current VCB=-35V; IE=0 -0.1 mA IEBO Emitter cut-off current VEB=-6V; IC=0 -0.1 mA hFE-1 DC current gain IC=-500mA ; VCE=-2V 200 hFE-2 DC current gain IC=-4A ; VCE=-2V 70 Cob Output capacitance IE=0 ; VCB=-10V f=1MHz 62 pF fT Transition frequency IC=-500mA ; VCE=-2V 170 MHz 2 MIN TYP. MAX -35 UNIT V Inchange Semiconductor Product Specification 2SA1120 Silicon PNP Power Transistors PACKAGE OUTLINE Fig.2 Outline dimensions 3