isc Product Specification INCHANGE Semiconductor isc Silicon NPN Power Transistor 2SD1352 DESCRIPTION ·Collector-Emitter Breakdown Voltage: V(BR)CEO= 80(Min) ·Good Linearity of hFE ·Complement to Type 2SB989 APPLICATIONS ·Designed for general purpose application ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 80 V VCEO Collector-Emitter Voltage 80 V VEBO Emitter-Base Voltage 5 V IC Collector Current-Continuous 4 A IE Emitter Current-Continuous -4 A IB Base Current-Continuous 0.4 A PC Collector Power Dissipation@ TC=25℃ 30 W TJ Junction Temperature 150 ℃ -55~150 ℃ B Tstg Storage Temperature Range isc Website：www.iscsemi.cn isc Product Specification INCHANGE Semiconductor isc Silicon NPN Power Transistor 2SD1352 ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER V(BR)CEO Collector-Emitter Breakdown Voltage IC= 50mA; IB= 0 80 V V(BR)EBO Emitter-Base Breakdown Voltage IE= 10mA; IC= 0 5 V VCE(sat) Collector-Emitter Saturation Voltage IC= 3A; IB= 0.3A 0.45 1.5 V VBE(on) Base-Emitter On Voltage IC= 3A ; VCE= 5V 1.0 1.5 V ICBO Collector Cutoff Current VCB= 80V; IE= 0 30 μA IEBO Emitter Cutoff Current VEB= 5V; IC= 0 0.1 mA hFE-1 DC Current Gain IC= 0.5A ; VCE= 5V 40 hFE-2 DC Current Gain IC= 3A ; VCE= 5V 15 COB Output Capacitance IE= 0; VCB= 10V; ftest= 1MHz Current-Gain—Bandwidth Product IC= 0.5A ; VCE= 5V fT CONDITIONS B hFE-1 Classifications R O Y 40-80 70-140 120-240 isc Website：www.iscsemi.cn MIN 2 3 TYP. MAX UNIT 240 50 90 pF 8 MHz