isc Product Specification INCHANGE Semiconductor isc Silicon PNP Power Transistor 2SB1370 DESCRIPTION ·Low Collector Saturation Voltage: VCE(sat)= -0.3V(Typ.)@IC= -2A ·Good Linearity of hFE ·Wide Area of Safe Operation APPLICATIONS ·Designed for power switching applications n c . i m e ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER s c s .i VALUE ww VCBO Collector-Base Voltage VCEO Collector-Emitter Voltage VEBO UNIT -60 V -60 V Emitter-Base Voltage -5 V IC Collector Current-Continuous -3 A ICM Collector Current-Peak -6 A Collector Power Dissipation @ Ta=25℃ 2 w PC TJ Tstg W Collector Power Dissipation @ TC=25℃ 30 Junction Temperature 150 ℃ -55~150 ℃ Storage Temperature Range isc Website：www.iscsemi.cn isc Product Specification INCHANGE Semiconductor isc Silicon PNP Power Transistor 2SB1370 ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER V(BR)CEO Collector-Emitter Breakdown Voltage IC= -1mA; IB= 0 -60 V V(BR)CBO Collector-Base Breakdown Voltage IC= -50μA; IE= 0 -60 V V(BR)EBO Emitter-Base Breakdown Voltage IE= -50μA; IC= 0 -5 V VCE(sat) Collector-Emitter Saturation Voltage IC= -2A; IB= -0.2A -1.5 V VBE(sat) Base-Emitter Saturation Voltage IC= -2A; IB= -0.2A -1.5 V ICBO Collector Cutoff Current VCB= -60V; IE= 0 -10 μA IEBO Emitter Cutoff Current μA hFE DC Current Gain COB Output Capacitance m e s isc -10 fT CONDITIONS B B w. w w IC= -0.5A; VCE= -5V F 100-200 160-320 isc Website：www.iscsemi.cn n c . i 100 MAX UNIT 320 IE= 0; VCB= -10V; ftest= 1MHz 80 pF IC=-0.5A; VCE= -5V; ftest= 5MHz 15 MHz hFE Classifications E TYP. B VEB= -4V; IC= 0 Current-Gain—Bandwidth Product MIN 2