TECHNICAL DATA SHEET 6 Lake Street, Lawrence, MA 01841 1-800-446-1158 / (978) 620-2600 / Fax: (978) 689-0803 Website: http: //www.microsemi.com N-CHANNEL MOSFET Qualified per MIL-PRF-19500/557 DEVICES LEVELS 2N6798 JANS ABSOLUTE MAXIMUM RATINGS (TC = +25°C unless otherwise noted) Parameters / Test Conditions Symbol Value Unit Drain – Source Voltage VDS 200 Vdc Gate – Source Voltage VGS ± 20 Vdc ID1 5.5 Adc ID2 3.5 Adc Continuous Drain Current TC = +25°C Continuous Drain Current TC = +100°C Max. Power Dissipation Drain to Source On State Resistance Operating & Storage Temperature Ptl Rds(on) Top, Tstg 25 (1) W 0.4 (2) Ω -55 to +150 °C Note: (1) Derated Linearly by 0.2 W/°C for TC > +25°C (2) VGS = 10Vdc, ID = 3.5A TO-205AF (formerly TO-39) ELECTRICAL CHARACTERISTICS (TA = +25°C, unless otherwise noted) Parameters / Test Conditions Symbol Min. Drain-Source Breakdown Voltage VGS = 0V, ID = 1mAdc V(BR)DSS 200 Gate-Source Voltage (Threshold) VDS ≥ VGS, ID = 0.25mA VDS ≥ VGS, ID = 0.25mA, Tj = +125°C VDS ≥ VGS, ID = 0.25mA, Tj = -55°C VGS(th)1 VGS(th)2 VGS(th)3 2.0 1.0 Gate Current VGS = ±20V, VDS = 0V VGS = ±20V, VDS = 0V, Tj = +125°C IGSS1 IGSS2 ±100 ±200 nAdc Drain Current VGS = 0V, VDS = 160V VGS = 0V, VDS = 160V, Tj = +125°C IDSS1 IDSS2 25 0.25 µAdc mAdc rDS(on)1 rDS(on)2 0.4 0.42 Ω Ω rDS(on)3 0.75 Ω VSD 1.4 Vdc Static Drain-Source On-State Resistance VGS = 10V, ID = 3.5A pulsed VGS = 10V, ID = 5.5A pulsed Tj = +125°C VGS = 10V, ID = 3.5A pulsed Diode Forward Voltage VGS = 0V, ID = 5.5A pulsed T4-LDS-0167 Rev. 1 (101021) Max. Unit Vdc 4.0 Vdc 5.0 Page 1 of 3 TECHNICAL DATA SHEET 6 Lake Street, Lawrence, MA 01841 1-800-446-1158 / (978) 620-2600 / Fax: (978) 689-0803 Website: http: //www.microsemi.com N-CHANNEL MOSFET Qualified per MIL-PRF-19500/557 DYNAMIC CHARACTERISTICS Parameters / Test Conditions Gate Charge: On-State Gate Charge Gate to Source Charge Gate to Drain Charge Symbol VGS = 10V, ID = 5.5A VDS = 100V Min. Qg(on) Qgs Qgd Max. Unit 42.07 5.29 28.11 nC Max. Unit SWITCHING CHARACTERISTICS Parameters / Test Conditions Symbol Switching time tests: Turn-on delay time Rinse time Turn-off delay time Fall time ID = 5.5A, VGS = 10Vdc, Gate drive impedance = 7.5Ω, VDD = 77Vdc Diode Reverse Recovery Time di/dt ≤ 100A/µs, VDD ≤ 50V, IF = 5.5A T4-LDS-0167 Rev. 1 (101021) Min. td(on) tr td(off) tf 30 50 50 40 trr 500 ns ns Page 2 of 3 TECHNICAL DATA SHEET 6 Lake Street, Lawrence, MA 01841 1-800-446-1158 / (978) 620-2600 / Fax: (978) 689-0803 Website: http: //www.microsemi.com N-CHANNEL MOSFET Qualified per MIL-PRF-19500/557 PACKAGE DIMENSIONS Ltr Dimensions Inches Millimeters Min Max Min Max CD .305 .355 7.75 9.02 CH .160 .180 4.07 4.57 HD .335 .370 8.51 9.39 h J k LD LL LS LU L1 .009 .041 .028 .034 .029 .045 .016 .021 .500 .750 .200 TP .016 .019 .050 0.23 1.04 0.72 0.86 0.74 1.14 0.41 0.53 12.7 19.05 5.08 TP 0.41 0.48 1.27 2 3 7, 8 7, 8 6 7, 8 7, 8 L2 .250 6.35 7, 8 P .070 1.78 5 Notes Q .050 1.27 4 r .010 0.25 9 α 45° TP 45° TP 6 NOTES: 1 2 3 4 5 Dimensions are in inches. Millimeters are given for general information only. Beyond radius (r) maximum, j shall be held for a minimum length of .011 (0.028 mm). Dimension k measured from maximum HD. Outline in this zone is not controlled. Dimension CD shall not vary more than .010 (0.25 mm) in zone P. This zone is controlled for automatic handling. 6. Leads at gauge plane .054 +.001, -.000 (1.37 +0.03, -0.00 mm) below seating plane shall be within .007 (0.18 mm) radius of true position (TP) at maximum material condition (MMC) relative to tab at MMC. 6 LU applies between L1 and L2. LD applies between L2 and L minimum. Diameter is uncontrolled in L1 and beyond LL minimum. 7 All three leads. 8 Radius (r) applies to both inside corners of tab. 9 Drain is electrically connected to the case. 10 In accordance with ASME Y14.5M, diameters are equivalent to φx symbology. * FIGURE 1. Physical dimensions for TO-205AF. T4-LDS-0167 Rev. 1 (101021) Page 3 of 3