2N6849 Qualified Levels: JAN, JANTX, JANTXV and JANS P-CHANNEL MOSFET Available on commercial versions Qualified per MIL-PRF-19500/564 DESCRIPTION This 2N6849 switching transistor is military qualified up to the JANS level for high-reliability applications. This device is also available in a low profile U surface mount package. Microsemi also offers numerous other transistor products to meet higher and lower power ratings with various switching speed requirements in both through-hole and surface-mount packages. Important: For the latest information, visit our website http://www.microsemi.com. FEATURES • • JEDEC registered 2N6849 number. TO-205AF (TO-39) Package JAN, JANTX, JANTXV and JANS qualifications are available per MIL-PRF-19500/564. (See part nomenclature for all available options.) • RoHS compliant versions available (commercial grade only). Also available in: APPLICATIONS / BENEFITS • Lightweight top-hat design with flexible terminals offers a variety of mounting flexibility. • Military and other high-reliability applications. U-18 LCC package (surface mount) 2N6849U MAXIMUM RATINGS @ T A = +25ºC unless otherwise stated Parameters / Test Conditions Operating & Storage Junction Temperature Range Thermal Resistance Junction-to-Case Total Power Dissipation @ TA = +25 °C (1) @ TC = +25 °C Drain-Source Voltage, dc Gate-Source Voltage, dc (2) Drain Current, dc @ TC = +25 ºC (2) Drain Current, dc @ TC = +100 ºC (3) Off-State Current (Peak Total Value) Source Current Notes: Symbol Value TJ & Tstg R ӨJC -55 to +150 5.0 0.8 25 -100 ± 20 -6.5 -4.1 -25 -6.5 PT V DS V GS I D1 I D2 I DM IS Unit °C C/W o W V V A A A (pk) A 1. Derate linearly 0.2 W/°C for T C > +25 °C. 2. The following formula derives the maximum theoretical I D limit. I D is also limited by package and internal wires and may be limited due to pin diameter. MSC – Lawrence 6 Lake Street, Lawrence, MA 01841 Tel: 1-800-446-1158 or (978) 620-2600 Fax: (978) 689-0803 MSC – Ireland Gort Road Business Park, Ennis, Co. Clare, Ireland Tel: +353 (0) 65 6840044 Fax: +353 (0) 65 6822298 3. I DM = 4 x I D1 as calculated in note 2. Website: www.microsemi.com T4-LDS-0009, Rev. 3 (121484) ©2012 Microsemi Corporation Page 1 of 7 2N6849 MECHANICAL and PACKAGING • • • • • CASE: Hermetically sealed, kovar base, nickel cap. TERMINALS: Tin/lead solder dip nickel plate or RoHS compliant pure tin plate (commercial grade only). MARKING: Part number, date code, manufacturer’s ID. WEIGHT: Approximately 1.064 grams. See Package Dimensions on last page. PART NOMENCLATURE JAN 2N6849 (e3) Reliability Level JAN = JAN Level JANTX = JANTX Level JANTXV = JANTXV Level JANS = JANS Level Blank = Commercial RoHS Compliance e3 = RoHS compliant (available on commercial grade only) Blank = non-RoHS compliant JEDEC type number (see Electrical Characteristics table) Symbol di/dt IF RG V DD V DS V GS SYMBOLS & DEFINITIONS Definition Rate of change of diode current while in reverse-recovery mode, recorded as maximum value. Forward current Gate drive impedance Drain supply voltage Drain source voltage, dc Gate source voltage, dc T4-LDS-0009, Rev. 3 (121484) ©2012 Microsemi Corporation Page 2 of 7 2N6849 ELECTRICAL CHARACTERISTICS @ T A = +25 °C, unless otherwise noted Parameters / Test Conditions OFF CHARACTERISTICS Symbol Min. V (BR)DSS -100 Gate-Source Voltage (Threshold) V DS ≥ V GS , I D = -0.25 mA V DS ≥ V GS , I D = -0.25 mA, T J = +125°C V DS ≥ V GS , I D = -0.25 mA, T J = -55°C V GS(th)1 V GS(th)2 V GS(th)3 -2.0 -1.0 Gate Current V GS = ± 20 V, V DS = 0 V V GS = ± 20 V, V DS = 0 V, T J = +125°C I GSS1 I GSS2 ±100 ±200 nA Drain Current V GS = 0 V, V DS = -80 V I DSS1 -25 µA Drain Current V GS = 0 V, V DS = -80 V, T J = +125 °C I DSS2 -0.25 mA Static Drain-Source On-State Resistance V GS = -10 V, I D = -4.1 A pulsed r DS(on)1 0.30 Ω Static Drain-Source On-State Resistance V GS = -10 V, I D = -6.5 A pulsed r DS(on)2 0.32 Ω r DS(on)3 0.54 Ω V SD -4.3 V Max. Unit Drain-Source Breakdown Voltage V GS = 0 V, I D = -1.0 mA Static Drain-Source On-State Resistance T J = +125°C V GS = -10 V, I D = -4.1 A pulsed Diode Forward Voltage V GS = 0 V, I D = -6.5 A pulsed Max. Unit V -4.0 V -5.0 DYNAMIC CHARACTERISTICS Parameters / Test Conditions Gate Charge: Symbol Min. On-State Gate Charge V GS = -10 V, I D = -6.5 A, V DS = -50 V Q g(on) 34.8 nC Gate to Source Charge V GS = -10 V, I D = -6.5 A, V DS = -50 V Q gs 6.8 nC Gate to Drain Charge V GS = -10 V, I D = -6.5 A, V DS = -50 V Q gd 23.1 nC T4-LDS-0009, Rev. 3 (121484) ©2012 Microsemi Corporation Page 3 of 7 2N6849 ELECTRICAL CHARACTERISTICS @ T A = +25 °C, unless otherwise noted (continued) SWITCHING CHARACTERISTICS Parameters / Test Conditions Symbol Min. Max. Unit Turn-on delay time I D = -6.5 A, V GS = -10 V, R G = 7.5 Ω, V DD = -40 V t d(on) 60 ns Rinse time I D = -6.5 A, V GS = -10 V, R G = 7.5 Ω, V DD = -40 V tr 140 ns Turn-off delay time I D = -6.5 A, V GS = -10 V, R G = 7.5 Ω, V DD = -40 V t d(off) 140 ns Fall time I D = -6.5 A, V GS = -10 V, R G = 7.5 Ω, V DD = -40 V tf 140 ns Diode Reverse Recovery Time di/dt ≤ -100 A/µs, V DD ≤ -50 V, I F = -6.5 A t rr 250 ns T4-LDS-0009, Rev. 3 (121484) ©2012 Microsemi Corporation Page 4 of 7 2N6849 Thermal Response (ZӨJC) GRAPHS t 1 , Rectangle Pulse Duration (seconds) ID, DRAIN CURRENT (A) FIGURE 1 – Normalized Transient Thermal Impedance T C , CASE TEMPERATURE (°C) FIGURE 2 – Maximum Drain Current vs Case Temperature T4-LDS-0009, Rev. 3 (121484) ©2012 Microsemi Corporation Page 5 of 7 2N6849 ID, DRAIN CURRENT (AMPERES) GRAPHS (continued) V DS , DRAIN-TO-SOURCE VOLTAGE (VOLTS) FIGURE 3 – Maximum Safe Operating Area T4-LDS-0009, Rev. 3 (121484) ©2012 Microsemi Corporation Page 6 of 7 2N6849 PACKAGE DIMENSIONS Symbol Inch Min Dimensions Millimeters Max Min Max CD 0.305 0.335 7.75 8.51 CH HD 0.160 0.335 0.180 0.370 4.07 8.51 4.57 9.39 LC 0.200 TP 5.08 TP Note 6 LD LL 0.016 0.500 0.021 0.750 0.41 12.70 0.53 19.05 7, 8 7, 8 LU 0.016 0.019 0.41 0.48 7, 8 L1 L2 0.250 0.050 - 6.35 1.27 - 7, 8 7, 8 P 0.100 - 2.54 - 5 Q TL 0.029 0.050 0.045 0.74 1.27 1.14 4 3 TW 0.028 0.034 0.72 0.86 2 r α - 0.25 45° TP 9 6 0.010 45° TP - Schematic NOTES: 1. 2. 3. 4. 5. 6. Dimensions are in inches. Millimeters are given for general information only. Beyond radius (r) maximum, TW shall be held for a minimum length of 0.011 (0.028 mm). Dimension TL measured from maximum HD. Outline in this zone is not controlled. Dimension CD shall not vary more than 0.010 (0.25 mm) in zone P. This zone is controlled for automatic handling. Leads at gauge plane 0.054 +0.001, -0.000 (1.37 +0.03, -0.00 mm) below seating plane shall be within 0.007 (0.18 mm) radius of true position (TP) at maximum material condition (MMC) relative to tab at MMC. 7. LU applies between L1 and L2. LD applies between L2 and LL minimum. Diameter is uncontrolled in L1 and beyond LL minimum. 8. All three leads. 9. Radius (r) applies to both inside corners of tab. 10. Drain is electrically connected to the case. 11. In accordance with ASME Y14.5M, diameters are equivalent to Φx symbology. 12. Lead 1 = source, lead 2 = gate, lead 3 = drain. T4-LDS-0009, Rev. 3 (121484) ©2012 Microsemi Corporation Page 7 of 7