ISC 2SD1432

Inchange Semiconductor
Product Specification
2SD1432
Silicon NPN Power Transistors
DESCRIPTION
·With TO-3P(H)IS package
·High voltage ,high speed
·Low collector saturation voltage
APPLICATIONS
·Designed for use in TV and CRT
display horizontal output applications
PINNING
PIN
DESCRIPTION
1
Base
2
Collector
3
Emitter
Fig.1 simplified outline (TO-3P(H)IS) and symbol
Absolute maximum ratings (Ta=25℃)
SYMBOL
PARAMETER
CONDITIONS
VALUE
UNIT
VCBO
Collector-base voltage
Open emitter
1500
V
VCEO
Collector-emitter voltage
Open base
600
V
VEBO
Emitter-base voltage
Open collector
5
V
6
A
80
W
IC
Collector current
PD
Total power dissipation
Tj
Junction temperature
150
℃
Tstg
Storage temperature
-55~150
℃
TC=25℃
Inchange Semiconductor
Product Specification
2SD1432
Silicon NPN Power Transistors
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL
PARAMETER
VCE(sat)
Collector-emitter saturation voltage
VBE(sat)
MAX
UNIT
IC=5A; IB=1A
5.0
V
Base-emitter saturation voltage
IC=5A; IB=1A
1.5
V
ICBO
Collector cut-off current
VCB=500V; IE=0
10
μA
IEBO
Emitter cut-off current
VEB=5V; IC=0
1
mA
hFE
DC current gain
IC=1A ; VCE=5V
fT
Transition freuqency
IC=0.1A ; VCE=10V
COB
Output capacitance
IE=0 ; VCB=10V;f=1.0MHz
Fall time
IC=5A;IB1=1A
tf
CONDITIONS
2
MIN
TYP.
8
3
MHz
165
pF
1.0
μs
Inchange Semiconductor
Product Specification
2SD1432
Silicon NPN Power Transistors
PACKAGE OUTLINE
Fig.2 Outline dimensions (unindicated tolerance:±0.15 mm)
3