isc Product Specification INCHANGE Semiconductor isc Silicon NPN Power Transistor 2SD1117 DESCRIPTION ·Collector-Emitter Breakdown Voltage: V(BR)CEO= 40V(Min) ·Low Collector-Emitter Saturation Voltage: VCE(sat)= 1.2V(Max) @IC= 5A ·Wide Area of Safe Operation ·Complement to Type 2SB850 APPLICATIONS ·Designed for audio amplifier, series regulators and general purpose power amplifiers. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 40 V VCEO Collector-Emitter Voltage 40 V VEBO Emitter-Base Voltage 7 V IC Collector Current-Continuous 10 A IB Base Current-Continuous 2 A PC Collector Power Dissipation @ TC=25℃ 50 W TJ Junction Temperature 150 ℃ -55~150 ℃ B Tstg Storage Temperature Range THERMAL CHARACTERISTICS SYMBOL PARAMETER MAX UNIT Rth j-c Thermal Resistance, Junction to Case 2.5 ℃/W isc Website：www.iscsemi.cn isc Product Specification INCHANGE Semiconductor isc Silicon NPN Power Transistor 2SD1117 ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER V(BR)CEO Collector-Emitter Breakdown Voltage IC= 10mA; IB= 0 40 V V(BR)CBO Collector-Base Breakdown Voltage IC= 0.1mA; IE= 0 40 V V(BR)EBO Emitter-Base Breakdown Voltage IE= 0.1mA; IC= 0 7 V VCE(sat) Collector-Emitter Saturation Voltage IC= 5A; IB= 0.5A 1.2 V VB E(sat) Base-Emitter Saturation Voltage IC= 5A; IB= 0.5A 2.0 V ICBO Collector Cutoff Current VCB= 40V; IE= 0 10 μA IEBO Emitter Cutoff Current VEB= 7V; IC= 0 10 μA hFE DC Current Gain IC= 2A; VCE= 5V isc Website：www.iscsemi.cn CONDITIONS MIN B B 2 60 TYP. MAX 240 UNIT