isc Product Specification INCHANGE Semiconductor isc Silicon NPN Power Transistor 2SD1157 DESCRIPTION ·Collector-Emitter Breakdown Voltage: V(BR)CEO= 50V(Min) ·High DC Current Gain: hFE= 250V(Min.) @IC= 0.5A ·Low Collector Saturation Voltage ·High Reliability APPLICATIONS ·Switching regulators ·DC-DC converter ·Solid sate relay ·General purpose power amplifiers ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 80 V VCEO Collector-Emitter Voltage 50 V VEBO Emitter-Base Voltage 10 V IC Collector Current-Continuous 4 A IB Base Current-Continuous 1 A PC Collector Power Dissipation @ TC=25℃ 25 W TJ Junction Temperature 150 ℃ -55~150 ℃ B Tstg Storage Temperature Range THERMAL CHARACTERISTICS SYMBOL PARAMETER MAX UNIT Rth j-c Thermal Resistance, Junction to Case 5.0 ℃/W isc Website：www.iscsemi.cn isc Product Specification INCHANGE Semiconductor isc Silicon NPN Power Transistor 2SD1157 ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS V(BR)CEO Collector-Emitter Breakdown Voltage IC= 10mA; IB= 0 50 V VCEO(SUS) Collector-Emitter Sustaining Voltage IC= 1A; IB= 0 50 V V(BR)CBO Collector-Base Breakdown Voltage IC= 0.1mA; IE= 0 80 V V(BR)EBO Emitter-Base Breakdown Voltage IE= 0.1mA; IC= 0 10 V VCE(sat) Collector-Emitter Saturation Voltage IC= 1A; IB= 50mA 0.5 V VB E(sat) Base-Emitter Saturation Voltage IC= 1A; IB= 50mA 1.5 V ICBO Collector Cutoff Current VCB= 80V; IE= 0 100 μA IEBO Emitter Cutoff Current VEB= 10V; IC= 0 100 μA hFE DC Current Gain IC= 0.5A; VCE= 5V 0.5 μs 3.0 μs 0.8 μs B MIN B B TYP. MAX UNIT 250 Switching times ton Turn-on Time tstg Storage Time tf IC= 2A, IB1= -IB2= 0.2A; RL= 5Ω; PW= 20μs; Duty≤2% Fall Time isc Website：www.iscsemi.cn 2