VISHAY VSKTF200

VSK.F200..P Series
Vishay Semiconductors
Fast Thyristor/Diode and Thyristor/Thyristor
(MAGN-A-PAK Power Modules), 200 A
FEATURES
• Fast turn-off thyristor
• Fast recovery diode
• High surge capability
• Electrically isolated baseplate
• 3500 VRMS isolating voltage
• Industrial standard package
• UL approved file E78996
• Compliant to RoHS directive 2002/95/EC
MAGN-A-PAK
• Designed and qualified for industrial level
DESCRIPTION
PRODUCT SUMMARY
IT(AV)
200 A
Type
Modules - Thyristor, Fast
This series of MAGN-A-PAK modules are intended for
applications such as self-commutated inverters, DC
choppers, electronic welders, induction heating and others
where fast switching characteristics are required.
MAJOR RATINGS AND CHARACTERISTICS
SYMBOL
CHARACTERISTICS
IT(AV)
TC
VALUES
UNITS
200
A
85
°C
444
IT(RMS)
ITSM
I2t
50 Hz
7600
60 Hz
8000
50 Hz
290
60 Hz
265
I2t
2900
tq
20/25
trr
2
VDRM/VRRM
Range
TJ
A
kA2s
kA2s
μs
800/1200
V
- 40 to 125
°C
ELECTRICAL SPECIFICATIONS
VOLTAGE RATINGS
TYPE NUMBER
VSK.F200-
VOLTAGE
CODE
VRRM/VDRM, MAXIMUM REPETITIVE
PEAK REVERSE AND OFF-STATE
BLOCKING VOLTAGE
V
VRSM, MAXIMUM NON-REPETITIVE
PEAK REVERSE VOLTAGE
V
08
800
800
12
1200
1200
Document Number: 94422
Revision: 19-Jul-10
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IRRM/IDRM
AT TJ = 125 °C
mA
50
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VSK.F200..P Series
Vishay Semiconductors Fast Thyristor/Diode and Thyristor/Thyristor
(MAGN-A-PAK Power Modules), 200 A
CURRENT CARRYING CAPABILITY
ITM
FREQUENCY
ITM
180° el
50 Hz
ITM
100 µs
180° el
380
560
630
850
2460
3180
400 Hz
460
690
710
1060
1570
2080
2500 Hz
310
450
530
760
630
860
5000 Hz
250
360
410
560
410
560
10 000 Hz
180
280
300
410
-
-
Recovery voltage Vr
50
50
50
50
50
Voltage before turn-on Vd
80 % VDRM
UNITS
80 % VDRM
50
80 % VDRM
A
V
Rise of on-state current dI/dt
50
50
-
-
-
-
A/μs
Case temperature
85
60
85
60
85
60
°C
Equivalent values for RC circuit
10/0.47
10/0.47
/μF
10/0.47
ON-STATE CONDUCTION
PARAMETER
SYMBOL
Maximum average on-state current
at case temperature
Maximum RMS on-state current
Maximum peak, one-cycle
non-repetitive on-state,
surge current
IT(AV)
IT(RMS)
ITSM
TEST CONDITIONS
180° conduction, half sine wave
444
t = 10 ms
t = 8.3 ms
t = 10 ms
t = 8.3 ms
Maximum
I2t
I2t
for fusing
°C
7600
t = 10 ms
I2t
A
85
t = 10 ms
t = 8.3 ms
No voltage
reapplied
100 % VRRM
reapplied
No voltage
reapplied
8000
Sinusoidal
half wave,
initial TJ = 125 °C
100 % VRRM
reapplied
6700
290
265
205
t = 0.1 ms to 10 ms, no voltage reapplied
2900
(16.7 % x  x IT(AV) < I <  x IT(AV)),
TJ = TJ maximum
1.18
High level value of threshold voltage
VT(TO)2
(I >  x IT(AV) < I <  x IT(AV)), TJ = TJ maximum
1.25
Low level value on-state slope resistance
rt1
(16.7 % x  x IT(AV) < I <  x IT(AV)),
TJ = TJ maximum
0.74
High level value on-state slope resistance
rt2
(I >  x IT(AV) < I <  x IT(AV)), TJ = TJ maximum
0.70
Ipk = 600 A, TJ = TJ maximum, tp = 10 ms sine pulse
1.73
Maximum holding current
IH
TJ = 25 °C, IT > 30 A
600
Maximum latching current
IL
TJ = 25 °C, VA = 12 V, Ra = 6 , Ig = 1A
1000
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kA2s
187
VT(TO)1
VTM
A
6400
Low level value or threshold voltage
Maximum on-state voltage drop
UNITS
200
As AC switch
t = 8.3 ms
Maximum I2t for fusing
VALUES
kA2s
V
m
V
mA
Document Number: 94422
Revision: 19-Jul-10
VSK.F200..P Series
Fast Thyristor/Diode and Thyristor/Thyristor Vishay Semiconductors
(MAGN-A-PAK Power Modules), 200 A
SWITCHING
PARAMETER
Maximum non-repetitive rate of rise
Maximum recovery time
Maximum turn-off time
SYMBOL
TEST CONDITIONS
dI/dt
Gate drive 20 V, 20 , tr  1 ms, VD = 80 % VDRM,
TJ = 25 °C
trr
ITM = 350 A, dI/dt = - 25 A/μs, VR = 50 V, TJ = 25 °C
tq
ITM = 750 A; TJ = TJ maximum; dI/dt = - 25 A/μs;
VR = 50 V; dV/dt = 400 V/μs linear to 80 % VDRM
VALUES
K
J
800
UNITS
A/μs
2
20
μs
25
BLOCKING
PARAMETER
SYMBOL
Maximum critical rate of rise of
off-state voltage
dV/dt
TEST CONDITIONS
VALUES
UNITS
TJ = 125 °C, exponential to 67 % VDRM
1000
V/μs
3000
V
50
mA
VALUES
UNITS
RMS insulation voltage
VINS
50 Hz, circuit to base, TJ = 25 °C, t = 1 s
Maximum peak reverse and off-state
leakage current
IRRM,
IDRM
TJ = 125 °C, rated VDRM/VRRM applied
TRIGGERING
PARAMETER
SYMBOL
Maximum peak gate power
PGM
Maximum peak average gate power
PG(AV)
Maximum peak positive gate current
IGM
Maximum peak negative gate voltage
-VGT
Maximum DC gate current required to trigger
IGT
DC gate voltage required to trigger
VGT
DC gate current not to trigger
IGD
DC gate voltage not to trigger
VGD
TEST CONDITIONS
f = 50 Hz, d% = 50
60
TJ = 125 °C, f = 50 Hz, d% = 50
10
TJ = 125 °C, tp  5 ms
TJ = 25 °C, Vak 12 V, Ra = 6
TJ = 125 °C, rated VDRM applied
W
10
A
5
V
200
mA
3
V
20
mA
0.25
V
VALUES
UNITS
THERMAL AND MECHANICAL SPECIFICATIONS
PARAMETER
SYMBOL
Maximum junction operating
temperature range
TEST CONDITIONS
TJ
- 40 to 125
Storage temperature range
TStg
- 40 to 150
Maximum thermal resistance,
junction to case per junction
RthJC
Maximum thermal resistance,
case to heatsink per module
RthC-hs
0.125
Mounting surface flat, smooth and greased
0.025
K/W
MAP to heatsink
Mounting torque ± 10 %
busbar to MAP
Approximate weight
DC operation
A mounting compound is recommended. The
torque should be rechecked after a period of 3 hours
to allow for the spread of the compound. Use of
cable lugs is not recommended, busbar should be
used and restrained during tightening. Threads must
be lubricated with a compound.
Case style
Document Number: 94422
Revision: 19-Jul-10
°C
4 to 6
(35 to 53)
N·m
(lbf · in)
500
g
17.8
oz.
MAGN-A-PAK
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VSK.F200..P Series
Vishay Semiconductors Fast Thyristor/Diode and Thyristor/Thyristor
(MAGN-A-PAK Power Modules), 200 A
RthJC CONDUCTION
CONDUCTIONS ANGLE
SINUSOIDAL CONDUCTION
RECTANGULAR CONDUCTION
180°
0.009
0.006
120°
0.10
0.011
90°
0.014
0.015
60°
0.020
0.020
30°
0.32
0.033
UNITS
K/W
VSK.F200.. Series
R thJC (DC) = 0.125 K/ W
120
110
Conduc tion Angle
100
90
30°
60°
80
90°
70
120°
180°
60
0
40
80
120
160
200
240
Maximum Average On-state Power Loss (W)
130
350
180°
120°
90°
60°
30°
300
250
200
RMS Limit
150
Conduc tion Angle
100
VSK.F200.. Series
Per Junction
TJ= 125°C
50
0
0
40
80
120
160
200
Average On-state Current (A)
Average On-state Current (A)
Fig. 1 - Current Ratings Characteristics
Fig. 3 - On-State Power Loss Characteristics
130
VSK.F200.. Series
R thJC (DC) = 0.125 K/ W
120
110
Conduction Period
100
90
30°
80
60°
90°
120°
70
180°
DC
60
0
50
100
150
200
250
300
350
Average On-state Current (A)
Fig. 2 - Current Ratings Characteristics
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Maximum Average On-state Power Loss (W)
Maximum Allowable Case Temperature (°C)
Maximum Allowable Case Temperature (°C)
Note
• Table shows the increment of thermal resistance RthJC when devices operate at different conduction angles than DC
500
DC
180°
120°
90°
60°
30°
450
400
350
300
250
200 RMS Limit
Conduction Period
150
VSK.F200.. Series
Per Junction
TJ = 125°C
100
50
0
0
50
100
150
200
250
300
350
Average On-state Current (A)
Fig. 4 - On-State Power Loss Characteristics
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Document Number: 94422
Revision: 19-Jul-10
VSK.F200..P Series
6000
5000
4000
VSK.F200.. Series
Per Junction
3000
1
10
1
(K/ W)
At Any Rated Load Condition And With
Rated VRRM Applied Following Surge.
Initial TJ= 125°C
@ 60 Hz 0.0083 s
@ 50 Hz 0.0100 s
Steady State Value:
R thJC = 0.125 K/ W
thJC
7000
(DC Operation)
Transient Thermal Impedance Z
Peak Half Sine Wave On-state Current (A)
Fast Thyristor/Diode and Thyristor/Thyristor Vishay Semiconductors
(MAGN-A-PAK Power Modules), 200 A
0.1
0.01
VSK.F200.. Series
Per Junc tion
0.001
0.001
100
Numb er Of Equa l Amplitude Half Cyc le Current Pulses (N)
Ma ximum Non Rep etitive Surge Current
Versus Pulse Train Duration. Control
Of Conduction May Not Be Maintained.
Initial TJ = 125°C
No Voltage Reap plied
Rated VRRMReapplied
7000
6000
5000
4000
VSK.F200.. Series
Per Junction
3000
0.01
0.1
1
10
100
320
ITM = 1000 A
500 A
300 A
200 A
100 A
300
280
260
240
220
200
180
160
140
120
VSK.F200.. Series
TJ = 125°C
100
80
10
20
30
40
50
60
70
80
90 100
Pulse Train Duration (s)
Rate Of Fall Of Forward Current - di/ dt (A/ µs)
Fig. 6 - Maximum Non-Repetitive Surge Current
Fig. 9 - Reverse Recovery Charge Characteristics
10000
Instantaneous On-state Current (A)
1
Square Wave Pulse Duration (s)
Maximum Reverse Recovery Charge - Qrr (µC)
8000
0.1
Fig. 8 - Thermal Impedance ZthJC Characteristics
1000
TJ= 25°C
TJ= 125°C
VSK.F200.. Series
Per Junc tion
100
1
2
3
4
5
6
7
Maximum Reverse Rec overy Current - Irr (A)
Peak Half Sine Wave On-state Current (A)
Fig. 5 - Maximum Non-Repetitive Surge Current
0.01
180
I TM = 1000A
500A
300A
200A
100A
150
120
90
60
30
10
VSK.F200.. Series
TJ = 125°C
20
30
40
50
60
70
80
90 100
Instantaneous On-state Voltage (V)
Rate Of Fall Of Forward Current - di/ dt (A/ µs)
Fig. 7 - On-State Voltage Drop Characteristics
Fig. 10 - Reverse Recovery Current Characteristics
Document Number: 94422
Revision: 19-Jul-10
For technical questions within your region, please contact one of the following:
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VSK.F200..P Series
Vishay Semiconductors Fast Thyristor/Diode and Thyristor/Thyristor
(MAGN-A-PAK Power Modules), 200 A
Peak On-stata Current (A)
1E4
50 Hz
50 Hz
150
150
400
1000
1E3
400
2500
1000
2500
5000
5000
1E2
tp
Snub ber c irc uit
R s= 10 ohms
C s = 0.47 µF
V D = 80% V DRM
VSK.F200.. Series
Sinusoidal pulse
TC = 85°C
1E1
1E1
1E2
1E3
1E1E
44
tp
Snubber circuit
R s= 10 ohms
C s = 0.47 µF
V D = 80% V DRM
VSK.F200.. Series
Sinusoidal pulse
T C = 60°C
1E1
1E1
1E2
1E3
1E4
Pulse Basewidth (µs)
Pulse Basewidth (µs)
Fig. 11 - Frequency Characteristics
Peak On-state Current (A)
1E4
tp
VSK.F200.. Series
Trapezoid a l pulse
TC= 85°C d i/d t 50A/ µs
tp
VSK.F200.. Series
Trapezoidal pulse
TC = 85°C di/ dt 100A/ µs
50 Hz
50 Hz
150
150
400
1E3
400
1000
1000
2500
2500
5000
5000
Snubber circ uit
R s= 10 ohms
C s = 0.47 µF
V D = 80% V DRM
1E2
1E1
1E2
1E3
1E1E4
4
1E1
E1
Snubber circ uit
R s= 10 ohms
C s = 0.47 µF
V D = 80% V DRM
1E2
1E3
1E4
Pulse Basewidth (µs)
Pulse Basewidth (µs)
Fig. 12 - Frequency Characteristics
Peak On-state Current (A)
1E4
50 Hz
50 Hz
150
150
400
400
1E3
1000
1000
2500
2500
5000
tp
1E2
1E1
5000
VSK.F200.. Series
Trapezoidal pulse
TC= 60°C di/ dt 50A/ µs
1E2
Snubber circ uit
R s= 10 ohms
C s = 0.47 µF
V D = 80% V DRM
1E3
1E4
1E4
tp
1E1
E1
Snubber circ uit
R s= 10 ohms
C s = 0.47 µF
V D = 80% V DRM
VSK.F200.. Series
Trapezoidal pulse
TC= 60°C di/ dt 100A/ µs
1E2
1E3
1E4
Pulse Basewidth (µs)
Pulse Basewidth (µs)
Fig. 13 - Frequency Characteristics
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Document Number: 94422
Revision: 19-Jul-10
VSK.F200..P Series
Fast Thyristor/Diode and Thyristor/Thyristor Vishay Semiconductors
(MAGN-A-PAK Power Modules), 200 A
1E4
Peak On-state Current (A)
10 joules per pulse
10 joules per pulse
5
2.5
5
2.5
1
1
0.5
1E3
0.5
0.25
0.25
0.1
0.1
0.05
0.05
1E2
tp
1E1
1E1
VSK.F200.. Series
Sinusoidal pulse
VSK.F200.. Series
Trapezoidal pulse
d i/ dt 50A/ µs
tp
1E2
E1
1E1
1E4
1E4
1E3
1E2
1E3
1E4
Pulse Basewidth (µs)
Pulse Basewidth (µs)
Fig. 14 - Maximum On-State Energy Power Loss Characteristics
10
Rectangular gate pulse
a) Recommended load line for
rated di/ dt : 10V, 10ohms
b) Recommended load line for
<=30% rated di/ dt : 10V, 20ohms
(1) PGM = 8W, tp = 25ms
(2) PGM = 20W, tp = 1ms
(3) PGM = 40W, tp = 5ms
(4) PGM = 80W, tp = 2.5ms
(a)
Tj=125 °C
1
Tj=-40 °C
(b)
Tj=25 °C
Instantaneous Gate Voltage (V)
100
(1)
(2)
(3)
(4)
VGD
IGD
0.1
0.01
VSK.F200.. Series
0.1
Frequenc y Limited by PG(AV)
1
10
100
Instantaneous Gate Current (A)
Fig. 15 - Gate Characteristics
Document Number: 94422
Revision: 19-Jul-10
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VSK.F200..P Series
Vishay Semiconductors Fast Thyristor/Diode and Thyristor/Thyristor
(MAGN-A-PAK Power Modules), 200 A
ORDERING INFORMATION TABLE
Device code
VSK
T
F
200
1
2
3
4
-
12
H
K
P
5
6
7
8
1
-
Module type
2
-
Circuit configuration (see circuit configuration table)
3
-
Fast SCR
4
-
Current rating: IT(AV) x 10 rounded
5
-
Voltage code x 100 = VRRM (see Voltage Ratings table)
6
-
dV/dt code: H ≤ 400 V/µs
7
-
tq code: K ≤ 20 µs
J ≤ 25 µs
8
-
Lead (Pb)-free
Note
• To order the optional hardware go to www.vishay.com/doc?95172
CIRCUIT CONFIGURATION
CIRCUIT
CONFIGURATION CODE
CIRCUIT DESCRIPTION
CIRCUIT DRAWING
VSKUF..
+
Two SCRs common cathodes
-
-
K2
G2
G1
K1
U
+
-
-
VSKKF..
+
SCR/diode common cathodes
K
+
-
K2
G2
-
VSKVF..
-
Two SCRs common anodes
+
K2
G2
G1
K1
V
-
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+
+
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+
Document Number: 94422
Revision: 19-Jul-10
VSK.F200..P Series
Fast Thyristor/Diode and Thyristor/Thyristor Vishay Semiconductors
(MAGN-A-PAK Power Modules), 200 A
CIRCUIT CONFIGURATION
CIRCUIT
CONFIGURATION CODE
CIRCUIT DESCRIPTION
CIRCUIT DRAWING
VSKNF..
-
+
+
G1
K1
SCR/diode common anodes
N
-
+
+
VSKLF..
~
SCR/diode doubler circuit, negative control
L
+
~
+
K2
G2
-
VSKTF..
~
Two SCRs doubler circuit
+
-
K2
G2
G1
K1
T
+
~
-
VSKHF..
~
+
G1
K1
SCR/diode doubler circuit, positive control
H
~
+
-
LINKS TO RELATED DOCUMENTS
Dimensions
Document Number: 94422
Revision: 19-Jul-10
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Outline Dimensions
Vishay Semiconductors
MAGN-A-PAK
DIMENSIONS in millimeters (inches)
Ø 5.5
35 (1.38)
20 (0.79)
80 (3.15)
50 (1.97)
38 (1.5)
6
(0.24)
3 screws M8 x 1.25
28 (1.12)
6 (0.24)
9 (0.35)
10 (0.39)
HEX 13
52 (2.04)
51 (2.01)
32
(1.26)
115 (4.53)
92 (3.62)
Notes
• Dimensions are nominal
• Full engineering drawings are available on request
• UL identification number for gate and cathode wire: UL 1385
• UL identification number for package: UL 94 V-0
Document Number: 95086
Revision: 03-Aug-07
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Vishay
Disclaimer
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product with the properties described in the product specification is suitable for use in a particular application. Parameters
provided in datasheets and/or specifications may vary in different applications and performance may vary over time. All
operating parameters, including typical parameters, must be validated for each customer application by the customer’s
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including but not limited to the warranty expressed therein.
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Document Number: 91000
Revision: 11-Mar-11
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