VS-16TTS16SPbF High Voltage Series Vishay Semiconductors Surface Mountable Phase Control SCR, 16 A FEATURES • Meets MSL level 1, per J-STD-020, LF maximum peak of 260 °C 2 Anode • Compliant to RoHS directive 2002/95/EC • Designed and qualified for industrial level APPLICATIONS 1 Cathode D2PAK • Input rectification (soft start) 3 Gate • Vishay input diodes, switches and output rectifiers which are in identical package outlines DESCRIPTION PRODUCT SUMMARY VT at 10 A < 1.4 V ITSM 200 A VRRM 1600 V The VS-16TTS16SPbF High Voltage Series of silicon controlled rectifiers are specifically designed for medium power switching and phase control applications. The glass passivation technology used has reliable operation up to 125 °C junction temperature. OUTPUT CURRENT IN TYPICAL APPLICATIONS APPLICATIONS SINGLE-PHASE BRIDGE THREE-PHASE BRIDGE NEMA FR-4 or G-10 glass fabric-based epoxy with 4 oz. (140 μm) copper 2.5 3.5 Aluminum IMS, RthCA = 15 °C/W 6.3 9.5 Aluminum IMS with heatsink, RthCA = 5 °C/W 14.0 18.5 UNITS A Note • TA = 55 °C, TJ = 125 °C, footprint 300 mm2 MAJOR RATINGS AND CHARACTERISTICS SYMBOL CHARACTERISTICS Sinusoidal waveform IT(AV) IRMS VALUES 10 16 UNITS A VRRM/VDRM 1600 V ITSM 200 A 10 A, TJ = 25 °C VT dV/dt dI/dt 1.4 V 500 V/μs 150 A/μs - 40 to 125 °C VRRM, MAXIMUM PEAK REVERSE VOLTAGE V VDRM, MAXIMUM PEAK DIRECT VOLTAGE V IRRM/IDRM AT 125 °C mA 1600 1600 10 TJ VOLTAGE RATINGS PART NUMBER VS-16TTS16SPbF Document Number: 94590 Revision: 16-Jul-10 For technical questions within your region, please contact one of the following: [email protected], [email protected], [email protected] www.vishay.com 1 VS-16TTS16SPbF High Voltage Series Vishay Semiconductors Surface Mountable Phase Control SCR, 16 A ABSOLUTE MAXIMUM RATINGS PARAMETER SYMBOL Maximum average on-state current IT(AV) Maximum RMS on-state current IRMS Maximum peak, one-cycle, non-repetitive surge current ITSM TEST CONDITIONS TC = 93 °C, 180° conduction, half sine wave 10 ms sine pulse, no voltage reapplied 200 10 ms sine pulse, rated VRRM applied 144 10 ms sine pulse, no voltage reapplied 200 2000 I2t t = 0.1 ms to 10 ms, no voltage reapplied Maximum on-state voltage drop VTM 10 A, TJ = 25 °C VT(TO) Maximum reverse and direct leakage current Holding current Maximum latching current IRM/IDM A 170 Maximum I2t for fusing Threshold voltage UNITS 10 10 ms sine pulse, rated VRRM applied I2t rt MAX. 16 Maximum I2t for fusing On-state slope resistance VALUES TYP. TJ = 125 °C TJ = 25 °C TJ = 125 °C Anode supply = 6 V, resistive load, initial IT = 1 A IL Anode supply = 6 V, resistive load A2s 1.4 V 24.0 m 1.1 V 0.5 VR = Rated VRRM/VDRM IH A2s 10 100 150 mA 200 Maximum rate of rise of off-state voltage dV/dt 500 V/μs Maximum rate of rise of turned-on current dI/dt 150 A/μs VALUES UNITS TRIGGERING PARAMETER SYMBOL TEST CONDITIONS PGM 8.0 PG(AV) 2.0 Maximum peak positive gate current + IGM 1.5 A Maximum peak negative gate voltage - VGM 10 V Maximum peak gate power Maximum average gate power Anode supply = 6 V, resistive load, TJ = - 10 °C Maximum required DC gate current to trigger Maximum required DC gate voltage to trigger IGT VGT Maximum DC gate voltage not to trigger VGD Maximum DC gate current not to trigger IGD 90 Anode supply = 6 V, resistive load, TJ = 25 °C 60 Anode supply = 6 V, resistive load, TJ = 125 °C 35 Anode supply = 6 V, resistive load, TJ = - 10 °C 3.0 Anode supply = 6 V, resistive load, TJ = 25 °C 2.0 Anode supply = 6 V, resistive load, TJ = 125 °C 1.0 TJ = 125 °C, VDRM = Rated value W mA V 0.25 2.0 mA VALUES UNITS SWITCHING PARAMETER SYMBOL Typical turn-on time tgt Typical reverse recovery time trr Typical turn-off time tq www.vishay.com 2 TEST CONDITIONS TJ = 25 °C TJ = 125 °C For technical questions within your region, please contact one of the following: [email protected], [email protected], [email protected] 0.9 4 μs 110 Document Number: 94590 Revision: 16-Jul-10 VS-16TTS16SPbF High Voltage Series Surface Mountable Phase Control SCR, 16 A Vishay Semiconductors THERMAL - MECHANICAL SPECIFICATIONS PARAMETER SYMBOL Maximum junction and storage temperature range TEST CONDITIONS VALUES TJ, TStg Soldering temperature UNITS - 40 to 125 TS For 10 s (1.6 mm from case) 240 Maximum thermal resistance, junction to case RthJC DC operation 1.3 Typical thermal resistance, junction to ambient RthJA PCB mount (1) 40 °C °C/W 2 Approximate weight g 0.07 Case style D2PAK (SMD-220) Marking device oz. 16TTS16S Maximum Allowable Case Temperature (°C) 125 16TTS.. Series R thJC (DC) = 1.3 °C/W 120 115 Conduction Angle 110 105 100 30° 60° 95 90° 120° 180° 90 0 2 4 6 8 10 12 Max imum Average On-state Power Loss (W) Note (1) When mounted on 1" square (650 mm2) PCB of FR-4 or G-10 material 4 oz. (140 μm) copper 40 °C/W. For recommended footprint and soldering techniques refer to application note #AN-994. 18 180° 120° 90° 60° 30° 16 14 12 RMS Limit 10 8 Conduction Angle 6 16TTS.. Series T J = 125°C 4 2 0 0 16TTS.. Series R thJC (DC) = 1.3 °C/W 115 Conduction Period 110 105 30° 60° 90° 120° 95 180° DC 90 0 2 4 6 8 10 12 14 16 Average On-state Current (A) Fig. 2 - Current Rating Characteristics Document Number: 94590 Revision: 16-Jul-10 3 4 5 6 7 8 9 10 11 Fig. 3 - On-State Power Loss Characteristics Max imum Average On-state Power Loss (W) Maximum Allowable Case Temperature (°C) 125 100 2 Average On-state Current (A) Average On-state Current (A) Fig. 1 - Current Rating Characteristics 120 1 25 DC 180° 120° 90° 60° 30° 20 15 RMS Limit 10 Conduction Period 5 16TTS.. Series TJ = 125°C 0 0 2 4 6 8 10 12 14 16 18 Average On-state Current (A) Fig. 4 - On-State Power Loss Characteristics For technical questions within your region, please contact one of the following: [email protected], [email protected], [email protected] www.vishay.com 3 VS-16TTS16SPbF High Voltage Series Surface Mountable Phase Control SCR, 16 A 180 At Any Rated Load Condition And With Rated VRRM Applied Following Surge. Initial TJ = 125°C @ 60 Hz 0.0083 s @ 50 Hz 0.0100 s 160 140 120 100 16TTS..Series 80 1 10 200 Peak Half Sine Wave Forward Current (A) Peak Half Sine Wave On-state Current (A) Vishay Semiconductors Maximum Non Repetitive Surge Current Versus Pulse Train Duration. Initial TJ = 125°C No Voltage Reapplied Rated VRRM Reapplied 180 160 140 120 100 16TTS.. Series 80 0.01 100 0.1 1 Pulse Train Duration (s) Number Of Equal Amplitude Half C ycle Current Pulses (N) Fig. 5 - Maximum Non-Repetitive Surge Current Fig. 6 - Maximum Non-Repetitive Surge Current 1000 Instantaneous On-state Current (A) 16TTS.. Series 100 10 T J = 25°C TJ = 125°C 1 0 1 2 3 4 5 Instantaneous On-st ate Voltage (V) Transient Thermal Impedance Z thJC (°C/W) Fig. 7 - On-State Voltage Drop Characteristics 10 Steady State Value (DC Operation) 1 D = 0.50 D = 0.33 D = 0.25 D = 0.17 D = 0.08 0.1 Single Pulse 16TTS.. Series 0.01 0.0001 0.001 0.01 0.1 1 10 Square Wave Pulse Duration (s) Fig. 8 - Thermal Impedance ZthJC Characteristics www.vishay.com 4 For technical questions within your region, please contact one of the following: [email protected], [email protected], [email protected] Document Number: 94590 Revision: 16-Jul-10 VS-16TTS16SPbF High Voltage Series Surface Mountable Phase Control SCR, 16 A Vishay Semiconductors Rectangular gate pulse a)Recommended load line for rated di/dt: 10 V, 20 ohms tr = 0.5µs, tp >= 6 µs b)Recommended load line for <= 30% rated di/dt: 10 V, 65 ohms 10 tr = 1 µs, tp >= 6 µs (1) PGM = 40 , tp = 1 ms (2) PGM = 20 W, tp = 2 ms (3) PGM = 8 W, tp = 5 ms (4) PGM = 4 W, tp = 10 ms (a) (b) VGD IGD TJ = -10 °C TJ = 125 °C 1 TJ = 25 °C Instantaneous Gate Voltage (V) 100 (4) 16TTS.. Series 0.1 0.001 0.01 0.1 (3) (2) (1) Frequency Limited by PG(AV) 1 10 100 Instantaneous Gate Current (A) Fig. 9 - Gate Characteristics ORDERING INFORMATION TABLE Device code VS- 16 T T S 16 S 1 2 3 4 5 6 7 1 - HPP product suffix 2 - Current rating 3 - Circuit configuration: 4 - TRL PbF 8 9 T = Single thyristor Package: T = TO-220AC 5 - Type of silicon: S = Standard recovery rectifier 6 - Voltage rating: Voltage code x 100 = VRRM (16 = 1600 V) 7 - S = TO-220 D2PAK (SMD-220) version 8 - None = Tube TRL = Tape and reel (left oriented) TRR = Tape and reel (right oriented) 9 - PbF = Lead (Pb)-free LINKS TO RELATED DOCUMENTS Dimensions www.vishay.com/doc?95046 Part marking information www.vishay.com/doc?95054 Packaging information www.vishay.com/doc?95032 Document Number: 94590 Revision: 16-Jul-10 For technical questions within your region, please contact one of the following: [email protected], [email protected], [email protected] www.vishay.com 5 Outline Dimensions Vishay Semiconductors D2PAK DIMENSIONS in millimeters and inches Conforms to JEDEC outline D2PAK (SMD-220) (2)(3) E B Pad layout A A (E) c2 11.00 MIN. (0.43) A (3) L1 4 9.65 MIN. (0.38) (D1) (3) Detail A D H 1 2 17.90 (0.70) 15.00 (0.625) (2) 3 3.81 MIN. (0.15) L2 B B 2.32 MIN. (0.08) A 2 x b2 c 2.64 (0.103) 2.41 (0.096) (3) E1 C View A - A 2xb ± 0.004 M B 0.010 M A M B Plating H 2x e Base Metal (4) b1, b3 Gauge plane Seating plane Lead assignments Diodes 1. - Anode (two die)/open (one die) 2., 4. - Cathode 3. - Anode SYMBOL MILLIMETERS MIN. c1 (4) (c) B 0° to 8° MAX. L3 Lead tip A1 L (b, b2) L4 Section B - B and C - C Scale: None Detail “A” Rotated 90 °CW Scale: 8:1 INCHES MIN. MAX. NOTES SYMBOL MILLIMETERS MIN. MAX. INCHES MIN. MAX. NOTES A 4.06 4.83 0.160 0.190 D1 6.86 8.00 0.270 0.315 3 A1 0.00 0.254 0.000 0.010 E 9.65 10.67 0.380 0.420 2, 3 E1 7.90 8.80 0.311 0.346 3 b 0.51 0.99 0.020 0.039 b1 0.51 0.89 0.020 0.035 b2 1.14 1.78 0.045 0.070 b3 1.14 1.73 0.045 0.068 c 0.38 0.74 0.015 0.029 c1 0.38 0.58 0.015 0.023 c2 1.14 1.65 0.045 0.065 D 8.51 9.65 0.335 0.380 4 4 4 e 0.100 BSC H 14.61 15.88 0.575 0.625 L 1.78 2.79 0.070 0.110 L1 - 1.65 - 0.066 L2 1.27 1.78 0.050 0.070 L3 2 2.54 BSC L4 0.25 BSC 4.78 5.28 3 0.010 BSC 0.188 0.208 Notes (1) Dimensioning and tolerancing per ASME Y14.5 M-1994 (2) Dimension D and E do not include mold flash. Mold flash shall not exceed 0.127 mm (0.005") per side. These dimensions are measured at the outmost extremes of the plastic body (3) Thermal pad contour optional within dimension E, L1, D1 and E1 (4) Dimension b1 and c1 apply to base metal only (5) Datum A and B to be determined at datum plane H (6) Controlling dimension: inch (7) Outline conforms to JEDEC outline TO-263AB Document Number: 95046 Revision: 31-Mar-11 For technical questions within your region, please contact one of the following: www.vishay.com [email protected], [email protected], [email protected] 1 This document is subject to change without notice. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Legal Disclaimer Notice Vishay Disclaimer ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE. 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No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document or by any conduct of Vishay. Product names and markings noted herein may be trademarks of their respective owners. Document Number: 91000 Revision: 11-Mar-11 www.vishay.com 1