VISHAY 16TTS16STRLPBF

VS-16TTS16SPbF High Voltage Series
Vishay Semiconductors
Surface Mountable Phase Control SCR, 16 A
FEATURES
• Meets MSL level 1, per J-STD-020, LF maximum
peak of 260 °C
2
Anode
• Compliant to RoHS directive 2002/95/EC
• Designed and qualified for industrial level
APPLICATIONS
1
Cathode
D2PAK
• Input rectification (soft start)
3
Gate
• Vishay input diodes, switches and output rectifiers which
are in identical package outlines
DESCRIPTION
PRODUCT SUMMARY
VT at 10 A
< 1.4 V
ITSM
200 A
VRRM
1600 V
The VS-16TTS16SPbF High Voltage Series of silicon
controlled rectifiers are specifically designed for medium
power switching and phase control applications. The glass
passivation technology used has reliable operation up to
125 °C junction temperature.
OUTPUT CURRENT IN TYPICAL APPLICATIONS
APPLICATIONS
SINGLE-PHASE BRIDGE
THREE-PHASE BRIDGE
NEMA FR-4 or G-10 glass fabric-based epoxy
with 4 oz. (140 μm) copper
2.5
3.5
Aluminum IMS, RthCA = 15 °C/W
6.3
9.5
Aluminum IMS with heatsink, RthCA = 5 °C/W
14.0
18.5
UNITS
A
Note
• TA = 55 °C, TJ = 125 °C, footprint 300 mm2
MAJOR RATINGS AND CHARACTERISTICS
SYMBOL
CHARACTERISTICS
Sinusoidal waveform
IT(AV)
IRMS
VALUES
10
16
UNITS
A
VRRM/VDRM
1600
V
ITSM
200
A
10 A, TJ = 25 °C
VT
dV/dt
dI/dt
1.4
V
500
V/μs
150
A/μs
- 40 to 125
°C
VRRM, MAXIMUM PEAK
REVERSE VOLTAGE
V
VDRM, MAXIMUM PEAK
DIRECT VOLTAGE
V
IRRM/IDRM
AT 125 °C
mA
1600
1600
10
TJ
VOLTAGE RATINGS
PART NUMBER
VS-16TTS16SPbF
Document Number: 94590
Revision: 16-Jul-10
For technical questions within your region, please contact one of the following:
[email protected], [email protected], [email protected]
www.vishay.com
1
VS-16TTS16SPbF High Voltage Series
Vishay Semiconductors
Surface Mountable
Phase Control SCR, 16 A
ABSOLUTE MAXIMUM RATINGS
PARAMETER
SYMBOL
Maximum average on-state current
IT(AV)
Maximum RMS on-state current
IRMS
Maximum peak, one-cycle,
non-repetitive surge current
ITSM
TEST CONDITIONS
TC = 93 °C, 180° conduction, half sine wave
10 ms sine pulse, no voltage reapplied
200
10 ms sine pulse, rated VRRM applied
144
10 ms sine pulse, no voltage reapplied
200
2000
I2t
t = 0.1 ms to 10 ms, no voltage reapplied
Maximum on-state voltage drop
VTM
10 A, TJ = 25 °C
VT(TO)
Maximum reverse and direct leakage current
Holding current
Maximum latching current
IRM/IDM
A
170
Maximum I2t for fusing
Threshold voltage
UNITS
10
10 ms sine pulse, rated VRRM applied
I2t
rt
MAX.
16
Maximum I2t for fusing
On-state slope resistance
VALUES
TYP.
TJ = 125 °C
TJ = 25 °C
TJ = 125 °C
Anode supply = 6 V, resistive load, initial IT = 1 A
IL
Anode supply = 6 V, resistive load
A2s
1.4
V
24.0
m
1.1
V
0.5
VR = Rated VRRM/VDRM
IH
A2s
10
100
150
mA
200
Maximum rate of rise of off-state voltage
dV/dt
500
V/μs
Maximum rate of rise of turned-on current
dI/dt
150
A/μs
VALUES
UNITS
TRIGGERING
PARAMETER
SYMBOL
TEST CONDITIONS
PGM
8.0
PG(AV)
2.0
Maximum peak positive gate current
+ IGM
1.5
A
Maximum peak negative gate voltage
- VGM
10
V
Maximum peak gate power
Maximum average gate power
Anode supply = 6 V, resistive load, TJ = - 10 °C
Maximum required DC gate current to trigger
Maximum required DC gate
voltage to trigger
IGT
VGT
Maximum DC gate voltage not to trigger
VGD
Maximum DC gate current not to trigger
IGD
90
Anode supply = 6 V, resistive load, TJ = 25 °C
60
Anode supply = 6 V, resistive load, TJ = 125 °C
35
Anode supply = 6 V, resistive load, TJ = - 10 °C
3.0
Anode supply = 6 V, resistive load, TJ = 25 °C
2.0
Anode supply = 6 V, resistive load, TJ = 125 °C
1.0
TJ = 125 °C, VDRM = Rated value
W
mA
V
0.25
2.0
mA
VALUES
UNITS
SWITCHING
PARAMETER
SYMBOL
Typical turn-on time
tgt
Typical reverse recovery time
trr
Typical turn-off time
tq
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TEST CONDITIONS
TJ = 25 °C
TJ = 125 °C
For technical questions within your region, please contact one of the following:
[email protected], [email protected], [email protected]
0.9
4
μs
110
Document Number: 94590
Revision: 16-Jul-10
VS-16TTS16SPbF High Voltage Series
Surface Mountable
Phase Control SCR, 16 A
Vishay Semiconductors
THERMAL - MECHANICAL SPECIFICATIONS
PARAMETER
SYMBOL
Maximum junction and storage
temperature range
TEST CONDITIONS
VALUES
TJ, TStg
Soldering temperature
UNITS
- 40 to 125
TS
For 10 s (1.6 mm from case)
240
Maximum thermal resistance,
junction to case
RthJC
DC operation
1.3
Typical thermal resistance,
junction to ambient
RthJA
PCB mount (1)
40
°C
°C/W
2
Approximate weight
g
0.07
Case style D2PAK (SMD-220)
Marking device
oz.
16TTS16S
Maximum Allowable Case Temperature (°C)
125
16TTS.. Series
R thJC (DC) = 1.3 °C/W
120
115
Conduction Angle
110
105
100
30°
60°
95
90°
120°
180°
90
0
2
4
6
8
10
12
Max imum Average On-state Power Loss (W)
Note
(1) When mounted on 1" square (650 mm2) PCB of FR-4 or G-10 material 4 oz. (140 μm) copper 40 °C/W.
For recommended footprint and soldering techniques refer to application note #AN-994.
18
180°
120°
90°
60°
30°
16
14
12
RMS Limit
10
8
Conduction Angle
6
16TTS.. Series
T J = 125°C
4
2
0
0
16TTS.. Series
R thJC (DC) = 1.3 °C/W
115
Conduction Period
110
105
30°
60°
90°
120°
95
180° DC
90
0
2
4
6
8
10
12
14
16
Average On-state Current (A)
Fig. 2 - Current Rating Characteristics
Document Number: 94590
Revision: 16-Jul-10
3
4
5
6
7
8
9
10 11
Fig. 3 - On-State Power Loss Characteristics
Max imum Average On-state Power Loss (W)
Maximum Allowable Case Temperature (°C)
125
100
2
Average On-state Current (A)
Average On-state Current (A)
Fig. 1 - Current Rating Characteristics
120
1
25
DC
180°
120°
90°
60°
30°
20
15
RMS Limit
10
Conduction Period
5
16TTS.. Series
TJ = 125°C
0
0
2
4
6
8
10
12
14
16
18
Average On-state Current (A)
Fig. 4 - On-State Power Loss Characteristics
For technical questions within your region, please contact one of the following:
[email protected], [email protected], [email protected]
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3
VS-16TTS16SPbF High Voltage Series
Surface Mountable
Phase Control SCR, 16 A
180
At Any Rated Load Condition And With
Rated VRRM Applied Following Surge.
Initial TJ = 125°C
@ 60 Hz 0.0083 s
@ 50 Hz 0.0100 s
160
140
120
100
16TTS..Series
80
1
10
200
Peak Half Sine Wave Forward Current (A)
Peak Half Sine Wave On-state Current (A)
Vishay Semiconductors
Maximum Non Repetitive Surge Current
Versus Pulse Train Duration.
Initial TJ = 125°C
No Voltage Reapplied
Rated VRRM Reapplied
180
160
140
120
100
16TTS.. Series
80
0.01
100
0.1
1
Pulse Train Duration (s)
Number Of Equal Amplitude Half C ycle Current Pulses (N)
Fig. 5 - Maximum Non-Repetitive Surge Current
Fig. 6 - Maximum Non-Repetitive Surge Current
1000
Instantaneous On-state Current (A)
16TTS.. Series
100
10
T
J
= 25°C
TJ = 125°C
1
0
1
2
3
4
5
Instantaneous On-st ate Voltage (V)
Transient Thermal Impedance Z thJC (°C/W)
Fig. 7 - On-State Voltage Drop Characteristics
10
Steady State Value
(DC Operation)
1
D = 0.50
D = 0.33
D = 0.25
D = 0.17
D = 0.08
0.1
Single Pulse
16TTS.. Series
0.01
0.0001
0.001
0.01
0.1
1
10
Square Wave Pulse Duration (s)
Fig. 8 - Thermal Impedance ZthJC Characteristics
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For technical questions within your region, please contact one of the following:
[email protected], [email protected], [email protected]vishay.com
Document Number: 94590
Revision: 16-Jul-10
VS-16TTS16SPbF High Voltage Series
Surface Mountable
Phase Control SCR, 16 A
Vishay Semiconductors
Rectangular gate pulse
a)Recommended load line for
rated di/dt: 10 V, 20 ohms
tr = 0.5µs, tp >= 6 µs
b)Recommended load line for
<= 30% rated di/dt: 10 V, 65 ohms
10
tr = 1 µs, tp >= 6 µs
(1) PGM = 40 , tp = 1 ms
(2) PGM = 20 W, tp = 2 ms
(3) PGM = 8 W, tp = 5 ms
(4) PGM = 4 W, tp = 10 ms
(a)
(b)
VGD
IGD
TJ = -10 °C
TJ = 125 °C
1
TJ = 25 °C
Instantaneous Gate Voltage (V)
100
(4)
16TTS.. Series
0.1
0.001
0.01
0.1
(3)
(2)
(1)
Frequency Limited by PG(AV)
1
10
100
Instantaneous Gate Current (A)
Fig. 9 - Gate Characteristics
ORDERING INFORMATION TABLE
Device code
VS-
16
T
T
S
16
S
1
2
3
4
5
6
7
1
-
HPP product suffix
2
-
Current rating
3
-
Circuit configuration:
4
-
TRL PbF
8
9
T = Single thyristor
Package:
T = TO-220AC
5
-
Type of silicon:
S = Standard recovery rectifier
6
-
Voltage rating: Voltage code x 100 = VRRM (16 = 1600 V)
7
-
S = TO-220 D2PAK (SMD-220) version
8
-
None = Tube
TRL = Tape and reel (left oriented)
TRR = Tape and reel (right oriented)
9
-
PbF = Lead (Pb)-free
LINKS TO RELATED DOCUMENTS
Dimensions
www.vishay.com/doc?95046
Part marking information
www.vishay.com/doc?95054
Packaging information
www.vishay.com/doc?95032
Document Number: 94590
Revision: 16-Jul-10
For technical questions within your region, please contact one of the following:
[email protected], [email protected], [email protected]
www.vishay.com
5
Outline Dimensions
Vishay Semiconductors
D2PAK
DIMENSIONS in millimeters and inches
Conforms to JEDEC outline D2PAK (SMD-220)
(2)(3)
E
B
Pad layout
A
A
(E)
c2
11.00
MIN.
(0.43)
A
(3) L1
4
9.65
MIN.
(0.38)
(D1) (3)
Detail A
D
H
1
2
17.90 (0.70)
15.00 (0.625)
(2)
3
3.81
MIN.
(0.15)
L2
B
B
2.32
MIN.
(0.08)
A
2 x b2
c
2.64 (0.103)
2.41 (0.096)
(3)
E1
C
View A - A
2xb
± 0.004 M B
0.010 M A M B
Plating
H
2x e
Base
Metal
(4)
b1, b3
Gauge
plane
Seating
plane
Lead assignments
Diodes
1. - Anode (two die)/open (one die)
2., 4. - Cathode
3. - Anode
SYMBOL
MILLIMETERS
MIN.
c1 (4)
(c)
B
0° to 8°
MAX.
L3
Lead tip
A1
L
(b, b2)
L4
Section B - B and C - C
Scale: None
Detail “A”
Rotated 90 °CW
Scale: 8:1
INCHES
MIN.
MAX.
NOTES
SYMBOL
MILLIMETERS
MIN.
MAX.
INCHES
MIN.
MAX.
NOTES
A
4.06
4.83
0.160
0.190
D1
6.86
8.00
0.270
0.315
3
A1
0.00
0.254
0.000
0.010
E
9.65
10.67
0.380
0.420
2, 3
E1
7.90
8.80
0.311
0.346
3
b
0.51
0.99
0.020
0.039
b1
0.51
0.89
0.020
0.035
b2
1.14
1.78
0.045
0.070
b3
1.14
1.73
0.045
0.068
c
0.38
0.74
0.015
0.029
c1
0.38
0.58
0.015
0.023
c2
1.14
1.65
0.045
0.065
D
8.51
9.65
0.335
0.380
4
4
4
e
0.100 BSC
H
14.61
15.88
0.575
0.625
L
1.78
2.79
0.070
0.110
L1
-
1.65
-
0.066
L2
1.27
1.78
0.050
0.070
L3
2
2.54 BSC
L4
0.25 BSC
4.78
5.28
3
0.010 BSC
0.188
0.208
Notes
(1) Dimensioning and tolerancing per ASME Y14.5 M-1994
(2) Dimension D and E do not include mold flash. Mold flash shall not exceed 0.127 mm (0.005") per side. These dimensions are measured at
the outmost extremes of the plastic body
(3) Thermal pad contour optional within dimension E, L1, D1 and E1
(4) Dimension b1 and c1 apply to base metal only
(5) Datum A and B to be determined at datum plane H
(6) Controlling dimension: inch
(7) Outline conforms to JEDEC outline TO-263AB
Document Number: 95046
Revision: 31-Mar-11
For technical questions within your region, please contact one of the following:
www.vishay.com
[email protected], [email protected], [email protected]
1
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
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Vishay
Disclaimer
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RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE.
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“Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other
disclosure relating to any product.
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Statements regarding the suitability of products for certain types of applications are based on Vishay’s knowledge of typical
requirements that are often placed on Vishay products in generic applications. Such statements are not binding statements
about the suitability of products for a particular application. It is the customer’s responsibility to validate that a particular
product with the properties described in the product specification is suitable for use in a particular application. Parameters
provided in datasheets and/or specifications may vary in different applications and performance may vary over time. All
operating parameters, including typical parameters, must be validated for each customer application by the customer’s
technical experts. Product specifications do not expand or otherwise modify Vishay’s terms and conditions of purchase,
including but not limited to the warranty expressed therein.
Except as expressly indicated in writing, Vishay products are not designed for use in medical, life-saving, or life-sustaining
applications or for any other application in which the failure of the Vishay product could result in personal injury or death.
Customers using or selling Vishay products not expressly indicated for use in such applications do so at their own risk and agree
to fully indemnify and hold Vishay and its distributors harmless from and against any and all claims, liabilities, expenses and
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obtain written terms and conditions regarding products designed for such applications.
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any conduct of Vishay. Product names and markings noted herein may be trademarks of their respective owners.
Document Number: 91000
Revision: 11-Mar-11
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