VS-HFA50PA60CPbF Vishay Semiconductors HEXFRED® Ultrafast Soft Recovery Diode, 2 x 25 A FEATURES • • • • Base common cathode 2 Ultrafast and ultrasoft recovery Very low IRRM and Qrr Compliant to RoHS Directive 2002/95/EC Designed and qualified for industrial level BENEFITS TO-247AC 1 3 Anode Anode 2 1 2 Common cathode PRODUCT SUMMARY Package TO-247AC IF(AV) 2 x 25 A VR 600 V VF at IF 1.7 V trr (typ.) 23 ns TJ max. 150 °C Diode variation Single die • • • • • Reduced RFI and EMI Reduced power loss in diode and switching transistor Higher frequency operation Reduced snubbing Reduced parts count DESCRIPTION VS-HFA50PA60CPbF is a state of the art center tap ultrafast recovery diode. Employing the latest in epitaxial construction and advanced processing techniques it features a superb combination of characteristics which result in performance which is unsurpassed by any rectifier previously available. With basic ratings of 600 V and 25 A per leg continuous current, the VS-HFA50PA60CPbF is especially well suited for use as the companion diode for IGBTs and MOSFETs. In addition to ultrafast recovery time, the HEXFRED® product line features extremely low values of peak recovery current (IRRM) and does not exhibit any tendency to “snap-off” during the tb portion of recovery. The HEXFRED features combine to offer designers a rectifier with lower noise and significantly lower switching losses in both the diode and the switching transistor. These HEXFRED advantages can help to significantly reduce snubbing, component count and heatsink sizes. The HEXFRED VS-HFA50PA60CPbF is ideally suited for applications in power supplies and power conversion systems (such as inverters), motor drives, and many other similar applications where high speed, high efficiency is needed. ABSOLUTE MAXIMUM RATINGS PARAMETER SYMBOL Cathode to anode voltage Maximum continuous forward current TEST CONDITIONS VR per leg per device IF TC = 100 °C VALUES UNITS 600 V 25 50 Single pulse forward current IFSM 225 Maximum repetitive forward current IFRM 100 Maximum power dissipation Operating junction and storage temperature range Document Number: 94074 Revision: 23-May-11 PD TJ, TStg TC = 25 °C 150 TC = 100 °C 60 - 55 to + 150 A W °C For technical questions within your region, please contact one of the following: www.vishay.com [email protected], [email protected], [email protected] 1 This document is subject to change without notice. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-HFA50PA60CPbF Vishay Semiconductors HEXFRED® Ultrafast Soft Recovery Diode, 2 x 25 A ELECTRICAL SPECIFICATIONS PER LEG (TJ = 25 °C unless otherwise specified) PARAMETER Cathode to anode breakdown voltage SYMBOL VBR TEST CONDITIONS IR = 100 μA IF = 25 A Maximum forward voltage VFM IF = 50 A See fig. 1 IF = 25 A, TJ = 125 °C VR = VR rated Maximum reverse leakage current IRM Junction capacitance CT VR = 200 V LS Measured lead to lead 5 mm from package body Series inductance TJ = 125 °C, VR = 0.8 x VR rated See fig. 2 See fig. 3 MIN. TYP. MAX. 600 - - - 1.3 1.7 - 1.5 2.0 - 1.3 1.7 UNITS V - 1.5 20 - 600 2000 - 55 100 pF - 12 - nH MIN. TYP. MAX. UNITS μA DYNAMIC RECOVERY CHARACTERISTICS (TJ = 25 °C unless otherwise specified) PARAMETER Reverse recovery time See fig. 5, 10 Peak recovery current See fig. 6 Reverse recovery charge See fig. 7 Peak rate of fall of recovery current during tb See fig. 8 SYMBOL TEST CONDITIONS trr IF = 1.0 A, dIF/dt = 200 A/μs, VR = 30 V - 23 - trr1 TJ = 25 °C - 50 75 trr2 TJ = 125 °C - 105 160 IRRM1 TJ = 25 °C - 4.5 10 IF = 25 A - 8.0 15 dIF/dt = 200 A/μs - 112 375 - 420 1200 ns A IRRM2 TJ = 125 °C Qrr1 TJ = 25 °C Qrr2 TJ = 125 °C dI(rec)M/dt1 TJ = 25 °C - 250 - dI(rec)M/dt2 TJ = 125 °C - 160 - MIN. TYP. MAX. UNITS - - 300 °C - - 0.83 - - 0.42 VR = 200 V nC A/μs THERMAL - MECHANICAL SPECIFICATIONS PARAMETER Lead temperature Junction to case, single leg conducting Junction to case, both legs conducting SYMBOL Tlead TEST CONDITIONS 0.063" from case (1.6 mm) for 10 s RthJC K/W Thermal resistance, junction to ambient RthJA Typical socket mount - - 40 Thermal resistance, case to heatsink RthCS Mounting surface, flat, smooth and greased - 0.25 - - 6.0 - g - 0.21 - oz. 6.0 (5.0) - 12 (10) kgf · cm (lbf · in) Weight Mounting torque Marking device www.vishay.com 2 Case style TO-247AC HFA50PA60C For technical questions within your region, please contact one of the following: Document Number: 94074 [email protected], [email protected], [email protected] Revision: 23-May-11 This document is subject to change without notice. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-HFA50PA60CPbF 10 000 100 TJ = 150 °C TJ = 150 °C TJ = 125 °C TJ = 25 °C 10 TJ = 125 °C 100 10 1 TJ = 25 °C 0.1 0.01 1 0.6 1.0 1.4 1.8 2.2 0 2.6 VFM - Forward Voltage Drop (V) 94074_01 1000 IR - Reverse Current (µA) IF - Instantaneous Forward Current (A) HEXFRED® Vishay Semiconductors Ultrafast Soft Recovery Diode, 2 x 25 A 200 600 VR - Reverse Voltage (V) 94074_02 Fig. 1 - Maximum Forward Voltage Drop vs. Instantaneous Forward Current (Per Leg) 400 Fig. 2 - Typical Reverse Current vs. Reverse Voltage (Per Leg) CT - Junction Capacitance (pF) 1000 TJ = 25 °C 100 10 1 94074_03 10 100 1000 VR - Reverse Voltage (V) Fig. 3 - Typical Junction Capacitance vs. Reverse Voltage (Per Leg) ZthJC - Thermal Response 1 D = 0.50 D = 0.20 D = 0.10 D = 0.05 D = 0.02 D = 0.01 0.1 PDM t1 t2 Notes: 1. Duty factor D = t1/t2 2. Peak TJ = PDM x ZthJC + TC Single pulse (thermal resistance) 0.01 0.00001 94074_04 0.0001 0.001 0.01 0.1 1 t1 - Rectangular Pulse Duration (s) Fig. 4 - Maximum Thermal Impedance ZthJC Characteristics (Per Leg) Document Number: 94074 Revision: 23-May-11 For technical questions within your region, please contact one of the following: www.vishay.com [email protected], [email protected], [email protected] 3 This document is subject to change without notice. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-HFA50PA60CPbF Vishay Semiconductors HEXFRED® Ultrafast Soft Recovery Diode, 2 x 25 A 140 1400 IF = 50 A IF = 25 A IF = 10 A 120 1200 Qrr (nC) trr (ns) IF = 50 A IF = 25 A IF = 10 A 1000 100 80 60 800 600 400 40 VR = 200 V TJ = 125 °C TJ = 25 °C 20 200 0 100 0 100 1000 dIF/dt (A/µs) 94074_05 Fig. 7 - Typical Stored Charge vs. dIF/dt (Per Leg) 30 10 000 VR = 200 V TJ = 125 °C TJ = 25 °C 25 IF = 50 A IF = 25 A IF = 10 A dI(rec)M/dt (A/µs) 20 15 10 5 1000 dIF/dt (A/µs) Fig. 6 - Typical Recovery Current vs. dIF/dt (Per Leg) www.vishay.com 4 IF = 50 A IF = 25 A IF = 10 A 1000 VR = 200 V TJ = 125 °C TJ = 25 °C 0 100 94074_06 1000 dIF/dt (A/µs) 94074_07 Fig. 5 - Typical Reverse Recovery Time vs. dIF/dt (Per Leg) Irr (A) VR = 200 V TJ = 125 °C TJ = 25 °C 100 100 94074_08 1000 dIF/dt (A/µs) Fig. 8 - Typical dI(rec)M/dt vs. dIF/dt (Per Leg) For technical questions within your region, please contact one of the following: Document Number: 94074 [email protected], [email protected], [email protected] Revision: 23-May-11 This document is subject to change without notice. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-HFA50PA60CPbF HEXFRED® Vishay Semiconductors Ultrafast Soft Recovery Diode, 2 x 25 A VR = 200 V 0.01 Ω L = 70 μH D.U.T. dIF/dt adjust D IRFP250 G S Fig. 9 - Reverse Recovery Parameter Test Circuit (3) trr IF ta tb 0 Qrr (2) IRRM (4) 0.5 IRRM dI(rec)M/dt (5) 0.75 IRRM (1) dIF/dt (1) dIF/dt - rate of change of current through zero crossing (2) IRRM - peak reverse recovery current (3) trr - reverse recovery time measured from zero crossing point of negative going IF to point where a line passing through 0.75 IRRM and 0.50 IRRM extrapolated to zero current. (4) Qrr - area under curve defined by trr and IRRM Qrr = trr x IRRM 2 (5) dI(rec)M/dt - peak rate of change of current during tb portion of trr Fig. 10 - Reverse Recovery Waveform and Definitions Document Number: 94074 Revision: 23-May-11 For technical questions within your region, please contact one of the following: www.vishay.com [email protected], [email protected], [email protected] 5 This document is subject to change without notice. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-HFA50PA60CPbF Vishay Semiconductors HEXFRED® Ultrafast Soft Recovery Diode, 2 x 25 A ORDERING INFORMATION TABLE Device code VS- HF A 50 PA 60 C PbF 1 2 3 4 5 6 7 8 1 - Vishay Semiconductors product 2 - HEXFRED® family 3 - Electron irradiated 4 - Current rating (50 = 50 A) 5 - PA = TO-247AC 6 - Voltage rating: (60 = 600 V) 7 - Circuit configuration C = Common cathode 8 - PbF = Lead (Pb)-free LINKS TO RELATED DOCUMENTS Dimensions www.vishay.com/doc?95223 Part marking information www.vishay.com/doc?95226 www.vishay.com 6 For technical questions within your region, please contact one of the following: Document Number: 94074 [email protected], [email protected], [email protected] Revision: 23-May-11 This document is subject to change without notice. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Outline Dimensions Vishay Semiconductors TO-220AC DIMENSIONS in millimeters and inches (6) B Seating plane A E A ØP 0.014 M B A M E2 (7) Q 3 D D L1 E A1 C Thermal pad C H1 D2 Detail B (6) 2 x b2 2xb Detail B θ D1 1 2 A (6) H1 (7) (6) D 1 2 3 Lead tip L3 C E1 (6) Lead assignments Diodes 1 + 2 - Cathode 3 - Anode L4 L c e1 A Conforms to JEDEC outline TO-220AC View A - A A2 0.015 M B A M SYMBOL MILLIMETERS INCHES NOTES SYMBOL MIN. MAX. MIN. MAX. A 4.25 4.65 0.167 0.183 E1 A1 1.14 1.40 0.045 0.055 A2 2.56 2.92 0.101 0.115 b 0.69 1.01 0.027 0.040 b1 0.38 0.97 0.015 0.038 b2 1.20 1.73 0.047 0.068 b3 1.14 1.73 0.045 0.068 MILLIMETERS INCHES MAX. MIN. MAX. 6.86 8.89 0.270 0.350 6 E2 - 0.76 - 0.030 7 e 2.41 2.67 0.095 0.105 e1 4.88 5.28 0.192 0.208 4 H1 6.09 6.48 0.240 0.255 L 13.52 14.02 0.532 0.552 4 L1 3.32 3.82 0.131 0.150 c 0.36 0.61 0.014 0.024 L3 1.78 2.13 0.070 0.084 c1 0.36 0.56 0.014 0.022 4 L4 0.76 1.27 0.030 0.050 D 14.85 15.25 0.585 0.600 3 ØP 3.54 3.73 0.139 0.147 Q 2.60 3.00 0.102 0.118 D1 8.38 9.02 0.330 0.355 D2 11.68 12.88 0.460 0.507 6 E 10.11 10.51 0.398 0.414 3, 6 NOTES MIN. 90° to 93° 6, 7 2 2 90° to 93° Notes (1) Dimensioning and tolerancing as per ASME Y14.5M-1994 (2) Lead dimension and finish uncontrolled in L1 (3) Dimension D, D1 and E do not include mold flash. Mold flash shall not exceed 0.127 mm (0.005") per side. These dimensions are measured at the outermost extremes of the plastic body (4) Dimension b1, b3 and c1 apply to base metal only (5) Controlling dimension: inches (6) Thermal pad contour optional within dimensions E, H1, D2 and E1 (7) Dimension E2 x H1 define a zone where stamping and singulation irregularities are allowed (8) Outline conforms to JEDEC TO-220, D2 (minimum) where dimensions are derived from the actual package outline Document Number: 95221 Revision: 07-Mar-11 For technical questions within your region, please contact one of the following: [email protected], [email protected], [email protected] www.vishay.com 1 Outline Dimensions www.vishay.com Vishay Semiconductors DIMENSIONS in millimeters and inches A A (3) (6) Ø P E B (2) R/2 N A2 S (Datum B) Ø K M DBM FP1 A D2 Q 2xR (2) D1 (4) D 1 4 D 3 2 Thermal pad (5) L1 C L A See view B 2 x b2 3xb 0.10 M C A M Planting (4) E1 0.01 M D B M View A - A C 2x e A1 b4 (b1, b3, b5) Lead assignments Base metal D DE (c) c1 E C C Diodes 1. - Anode/open 2. - Cathode 3. - Anode (b, b2, b4) (4) Section C - C, D - D, E - E SYMBOL A A1 A2 b b1 b2 b3 b4 b5 c c1 D D1 MILLIMETERS MIN. MAX. 4.65 5.31 2.21 2.59 1.50 2.49 0.99 1.40 0.99 1.35 1.65 2.39 1.65 2.37 2.59 3.43 2.59 3.38 0.38 0.86 0.38 0.76 19.71 20.70 13.08 - INCHES MIN. MAX. 0.183 0.209 0.087 0.102 0.059 0.098 0.039 0.055 0.039 0.053 0.065 0.094 0.065 0.094 0.102 0.135 0.102 0.133 0.015 0.034 0.015 0.030 0.776 0.815 0.515 - View B NOTES SYMBOL 3 4 D2 E E1 e FK L L1 N P P1 Q R S MILLIMETERS MIN. MAX. 0.51 1.30 15.29 15.87 13.72 5.46 BSC 2.54 14.20 16.10 3.71 4.29 7.62 BSC 3.56 3.66 6.98 5.31 5.69 4.52 5.49 5.51 BSC INCHES MIN. MAX. 0.020 0.051 0.602 0.625 0.540 0.215 BSC 0.010 0.559 0.634 0.146 0.169 0.3 0.14 0.144 0.275 0.209 0.224 1.78 0.216 0.217 BSC NOTES 3 Notes (1) Dimensioning and tolerancing per ASME Y14.5M-1994 (2) Contour of slot optional (3) Dimension D and E do not include mold flash. Mold flash shall not exceed 0.127 mm (0.005") per side. These dimensions are measured at the outermost extremes of the plastic body (4) Thermal pad contour optional with dimensions D1 and E1 (5) Lead finish uncontrolled in L1 (6) Ø P to have a maximum draft angle of 1.5 to the top of the part with a maximum hole diameter of 3.91 mm (0.154") (7) Outline conforms to JEDEC outline TO-247 with exception of dimension c Revision: 16-Jun-11 Document Number: 95223 1 For technical questions within your region: [email protected], [email protected], [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Legal Disclaimer Notice Vishay Disclaimer ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE. 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No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document or by any conduct of Vishay. Product names and markings noted herein may be trademarks of their respective owners. Document Number: 91000 Revision: 11-Mar-11 www.vishay.com 1