APTGF75H120TG VCES = 1200V IC = 75A @ Tc = 80°C Full - Bridge NPT IGBT Power Module Application • Welding converters • Switched Mode Power Supplies • Uninterruptible Power Supplies • Motor control VBUS Q3 Q1 G3 G1 OUT1 E1 OUT2 Q2 E3 Q4 G2 G4 E2 E4 NTC1 NTC2 0/VBU S G3 G4 E3 E4 VBUS 0/VBUS Benefits • Outstanding performance at high frequency operation • Stable temperature behavior • Very rugged • Direct mounting to heatsink (isolated package) • Low junction to case thermal resistance • Solderable terminals both for power and signal for easy PCB mounting • Easy paralleling due to positive TC of VCEsat • Low profile • RoHS compliant OUT2 OUT1 E1 E2 NTC2 G1 G2 NTC1 Features • Non Punch Through (NPT) Fast IGBT - Low voltage drop - Low tail current - Switching frequency up to 50 kHz - Soft recovery parallel diodes - Low diode VF - Low leakage current - RBSOA and SCSOA rated • Kelvin emitter for easy drive • Very low stray inductance - Symmetrical design - Lead frames for power connections • Internal thermistor for temperature monitoring • High level of integration Absolute maximum ratings Parameter Collector - Emitter Breakdown Voltage IC Continuous Collector Current ICM VGE PD Pulsed Collector Current Gate – Emitter Voltage Maximum Power Dissipation RBSOA Tc = 25°C Max ratings 1200 100 75 150 ±20 500 Tj = 150°C 150A @ 1200V Tc = 25°C Tc = 80°C Tc = 25°C Reverse Bias Safe Operating Area Unit V A V W These Devices are sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed. See application note APT0502 on www.microsemi.com www.microsemi.com 1-5 APTGF75H120TG – Rev 3 February, 2010 Symbol VCES APTGF75H120TG All ratings @ Tj = 25°C unless otherwise specified Electrical Characteristics Symbol Characteristic ICES Zero Gate Voltage Collector Current VCE(sat) Collector Emitter saturation Voltage VGE(th) IGES Gate Threshold Voltage Gate – Emitter Leakage Current Test Conditions Tj = 25°C VGE = 0V VCE = 1200V Tj = 125°C T j = 25°C VGE =15V IC = 75A Tj = 125°C VGE = VCE, IC = 2.5 mA VGE = ±20V, VCE = 0V Min Test Conditions VGE = 0V VCE = 25V f = 1MHz Min Typ 3.2 3.9 4.5 Max 250 500 3.7 Unit 6.5 ±500 V nA Max Unit µA V Dynamic Characteristics Symbol Cies Coes Cres QG Characteristic Input Capacitance Output Capacitance Reverse Transfer Capacitance VGE=±15V, IC=75A VCE=600V Inductive Switching (25°C) VGE = 15V VBus = 600V IC = 75A RG = 7.5Ω Inductive Switching (125°C) VGE = 15V VBus = 600V IC = 75A RG = 7.5Ω VGE = ±15V Tj = 125°C VBus = 600V IC = 75A Tj = 125°C RG = 7.5Ω VGE ≤15V ; VBus = 900V tp ≤ 10µs ; Tj = 125°C Gate charge Td(on) Tr Td(off) Tf Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Td(on) Tr Td(off) Turn-on Delay Time Rise Time Turn-off Delay Time Tf Fall Time Eon Turn-on Switching Energy Eoff Turn-off Switching Energy Isc Short Circuit data Typ 5.1 0.7 0.4 nF 0.8 µC 120 50 310 20 ns 130 60 360 ns 30 9 mJ 4 450 A Reverse diode ratings and characteristics VRRM IRM IF Test Conditions Min VR=1200V DC Forward Current VF Diode Forward Voltage trr Reverse Recovery Time Qrr Reverse Recovery Charge Er Reverse Recovery Energy Max 1200 Maximum Peak Repetitive Reverse Voltage Maximum Reverse Leakage Current Typ IF = 50A IF = 50A VR = 600V di/dt =1500A/µs www.microsemi.com V Tj = 25°C Tj = 125°C Tc = 80°C Tj = 25°C Tj = 125°C Unit 250 500 µA 50 A 2.1 1.9 V Tj = 25°C 95 Tj = 125°C 190 Tj = 25°C 4.2 Tj = 125°C Tj = 25°C Tj = 125°C 9 1.5 3 ns µC mJ 2-5 APTGF75H120TG – Rev 3 February, 2010 Symbol Characteristic APTGF75H120TG Temperature sensor NTC (see application note APT0406 on www.microsemi.com for more information). Symbol R25 ∆R25/R25 B25/85 ∆B/B Characteristic Resistance @ 25°C Min Typ 50 5 3952 4 Max Unit kΩ % K % Min Typ Max 0.25 0.6 Unit T25 = 298.15 K TC=100°C RT = R 25 T: Thermistor temperature ⎡ ⎛ 1 1 ⎞⎤ RT: Thermistor value at T − ⎟⎟⎥ exp⎢ B 25 / 85 ⎜⎜ ⎢⎣ ⎝ T25 T ⎠⎥⎦ Thermal and package characteristics Symbol Characteristic RthJC VISOL TJ TSTG TC Torque Wt IGBT Diode Junction to Case Thermal Resistance RMS Isolation Voltage, any terminal to case t =1 min, I isol<1mA, 50/60Hz Operating junction temperature range Storage Temperature Range Operating Case Temperature Mounting torque Package Weight To heatsink M5 4000 -40 -40 -40 2.5 °C/W V 150 125 100 4.7 160 °C N.m g ALL DIMENSIONS MARKED " * " ARE TOLERENCED AS : See application note APT0501 - Mounting Instructions for SP4 Power Modules on www.microsemi.com www.microsemi.com 3-5 APTGF75H120TG – Rev 3 February, 2010 SP4 Package outline (dimensions in mm) APTGF75H120TG Typical Performance Curve Output Characteristics 150 125 125 TJ=25°C 75 TJ=125°C 25 VGE=20V VGE=12V 75 VGE=9V 25 0 0 0 1 2 3 VCE (V) 4 5 6 0 28 2 3 4 VCE (V) VCE = 600V VGE = 15V RG = 7.5 Ω TJ = 125°C 24 125 20 E (mJ) 100 TJ=125°C 75 1 5 50 Eon 16 12 Eoff 8 TJ=25°C 25 6 Energy losses vs Collector Current Transfert Characteristics 150 4 Er 0 0 5 6 7 8 9 10 11 0 12 25 50 75 100 125 150 IC (A) VGE (V) Switching Energy Losses vs Gate Resistance Reverse Bias Safe Operating Area 35 175 VCE = 600V VGE =15V IC = 75A TJ = 125°C 25 20 Eon 150 125 IC (A) 30 E (mJ) VGE=15V 50 50 IC (A) TJ = 125°C 100 100 IC (A) IC (A) Output Characteristics (VGE=15V) 150 15 10 100 75 VGE=15V TJ=125°C RG=7.5 Ω 50 Eoff 25 5 0 0 0 10 20 30 40 50 Gate Resistance (ohms) 60 0 70 300 600 900 1200 1500 VCE (V) maximum Effective Transient Thermal Impedance, Junction to Case vs Pulse Duration IGBT 0.25 0.9 0.2 0.7 0.15 0.5 0.1 0.3 0.05 0.1 0.05 0 0.00001 Single Pulse 0.0001 0.001 0.01 0.1 1 10 rectangular Pulse Duration (Seconds) www.microsemi.com 4-5 APTGF75H120TG – Rev 3 February, 2010 Thermal Impedance (°C/W) 0.3 APTGF75H120TG Forward Characteristic of diode VCE=600V D=50% RG=7.5 Ω TJ=125°C TC=75°C 90 80 70 60 ZVS ZCS 50 40 125 100 IC (A) Fmax, Operating Frequency (kHz) Operating Frequency vs Collector Current 100 75 TJ=125°C 50 30 hard switching 20 10 25 TJ=25°C 0 0 0 20 40 60 80 0 100 0.5 IC (A) 1 1.5 VF (V) 2 2.5 3 maximum Effective Transient Thermal Impedance, Junction to Case vs Pulse Duration Thermal Impedance (°C/W) 0.7 0.6 0.5 Diode 0.9 0.7 0.4 0.3 0.2 0.1 0.5 0.3 0.1 Single Pulse 0.05 0 0.00001 0.0001 0.001 0.01 0.1 1 10 Microsemi reserves the right to change, without notice, the specifications and information contained herein www.microsemi.com 5-5 APTGF75H120TG – Rev 3 February, 2010 rectangular Pulse Duration (Seconds)