APTGT75H120TG Full - Bridge Fast Trench + Field Stop IGBT® Power Module Application • Welding converters • Switched Mode Power Supplies • Uninterruptible Power Supplies • Motor control VBUS Q3 Q1 VCES = 1200V IC = 75A @ Tc = 80°C G3 G1 E3 OUT2 Q4 G2 G4 E2 E4 NTC1 NTC2 0/VBU S G3 G4 E3 E4 VBUS 0/VBUS OUT2 OUT1 E1 E2 NTC2 G1 G2 NTC1 Benefits • Stable temperature behavior • Very rugged • Solderable terminals for easy PCB mounting • Direct mounting to heatsink (isolated package) • Low junction to case thermal resistance • Easy paralleling due to positive TC of VCEsat • Low profile • RoHS Compliant Absolute maximum ratings Symbol VCES Parameter Collector - Emitter Breakdown Voltage IC Continuous Collector Current ICM VGE PD Pulsed Collector Current Gate – Emitter Voltage Maximum Power Dissipation RBSOA Reverse Bias Safe Operating Area TC = 25°C Max ratings 1200 110 75 175 ±20 357 Tj = 125°C 150A @ 1150V TC = 25°C TC = 80°C TC = 25°C Unit V A July, 2006 Q2 V W These Devices are sensitive to Electrostatic Discharge. Proper Handing Procedures Should Be Followed. See application note APT0502 on www.microsemi.com www.microsemi.com 1-5 APTGT75H120TG – Rev 1 OUT1 E1 Features • Fast Trench + Field Stop IGBT® Technology - Low voltage drop - Low tail current - Switching frequency up to 20 kHz - Soft recovery parallel diodes - Low diode VF - Low leakage current - Avalanche energy rated - RBSOA and SCSOA rated • Kelvin emitter for easy drive • Very low stray inductance - Symmetrical design - Lead frames for power connections • High level of integration • Internal thermistor for temperature monitoring APTGT75H120TG All ratings @ Tj = 25°C unless otherwise specified ICES Zero Gate Voltage Collector Current VCE(sat) Collector Emitter saturation Voltage VGE(th) IGES Gate Threshold Voltage Gate – Emitter Leakage Current Test Conditions VGE = 0V, VCE = 1200V Tj = 25°C VGE =15V IC = 75A Tj = 125°C VGE = VCE , IC = 3 mA VGE = 20V, VCE = 0V Dynamic Characteristics Symbol Cies Coes Cres Td(on) Tr Characteristic Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-on Delay Time Rise Time Td(off) Tf Td(on) Tr Turn-off Delay Time Fall Time Turn-on Delay Time Rise Time Td(off) Tf Turn-off Delay Time Fall Time Eon Turn-on Switching Energy Eoff Turn-off Switching Energy Test Conditions VGE = 0V VCE = 25V f = 1MHz VRRM IRM Test Conditions IF DC Forward Current VF Diode Forward Voltage trr Reverse Recovery Time Qrr Reverse Recovery Charge 1.7 2.0 Typ 5340 280 240 260 30 Max Unit 250 2.1 µA 6.5 400 V nA Max Unit VR=1200V ns 420 70 285 50 ns 520 90 7 mJ 8.1 Min Typ Max IF = 75A IF = 75A VR = 600V Reverse Recovery Energy www.microsemi.com Unit V Tj = 25°C Tj = 125°C Tc = 80°C Tj = 25°C Tj = 125°C Tj = 25°C Tj = 125°C Tj = 25°C Tj = 125°C Tj = 25°C Tj = 125°C V pF 1200 di/dt =2000A/µs Er Typ 5.0 Min Maximum Peak Repetitive Reverse Voltage Maximum Reverse Leakage Current 1.4 Inductive Switching (25°C) VGE = ±15V VBus = 600V IC = 75A R G = 4.7Ω Inductive Switching (125°C) VGE = ±15V VBus = 600V IC = 75A R G = 4.7Ω VGE = ±15V Tj = 125°C VBus = 600V IC = 75A Tj = 125°C R G = 4.7Ω Reverse diode ratings and characteristics Symbol Characteristic Min 350 600 75 1.6 1.6 170 280 7 14 2.8 5.4 µA A 2.1 V ns July, 2006 Symbol Characteristic µC mJ 2-5 APTGT75H120TG – Rev 1 Electrical Characteristics APTGT75H120TG Temperature sensor NTC (see application note APT0406 on www.microsemi.com for more information). Symbol Characteristic R25 Resistance @ 25°C B 25/85 T25 = 298.15 K RT = R 25 Max Unit kΩ K Min Typ Max 0.35 0.58 Unit T: Thermistor temperature Symbol Characteristic VISOL TJ TSTG TC Torque Wt Typ 50 3952 1 1 RT : Thermistor value at T exp B 25 / 85 − T25 T Thermal and package characteristics RthJC Min IGBT Diode Junction to Case Thermal Resistance RMS Isolation Voltage, any terminal to case t =1 min, I isol<1mA, 50/60Hz Operating junction temperature range Storage Temperature Range Operating Case Temperature Mounting torque Package Weight To Heatsink M5 2500 -40 -40 -40 2.5 °C/W V 150 125 125 4.7 160 °C N.m g ALL DIMENSIO NS MARKED " * " ARE T OLERENCED AS : See application note APT0501 - Mounting Instructions for SP4 Power Modules on www.microsemi.com www.microsemi.com 3-5 APTGT75H120TG – Rev 1 July, 2006 SP4 Package outline (dimensions in mm) APTGT75H120TG Typical Performance Curve Output Characteristics (VGE=15V) 150 Output Characteristics 150 TJ = 125°C 125 TJ=25°C 75 VGE=15V 75 50 50 25 25 VGE =9V 0 0 1 2 VCE (V) 3 0 4 16 T J=25°C 125 12 E (mJ) 75 50 2 VCE (V) 3 4 V CE = 600V V GE = 15V RG = 4.7Ω T J = 125°C 14 T J=125°C 100 1 Energy losses vs Collector Current Transfert Characteristics 150 IC (A) VGE =13V 100 0 T J=125°C 10 Eoff Eon 8 6 Er 4 25 2 0 0 5 6 7 8 9 10 11 0 12 25 50 Switching Energy Losses vs Gate Resistance 16 V CE = 600V V GE =15V I C = 75A T J = 125°C 14 12 100 125 150 Reverse Bias Safe Operating Area 175 Eon 150 125 Eoff IC (A) 10 75 IC (A) VGE (V) E (mJ) VGE =17V TJ=125°C 100 IC (A) IC (A) 125 8 6 Er 100 75 4 50 2 25 0 V GE=15V T J=125°C RG=4.7Ω 0 0 4 8 12 16 20 24 Gate Resistance (ohms) 28 32 0 400 800 VCE (V) 1200 1600 maximum Effective Transient Thermal Impedance, Junction to Case vs Pulse Duration 0.3 0.25 IGBT 0.9 0.7 0.2 0.5 0.15 0.3 0.1 0.1 0.05 0 0.00001 July, 2006 0.35 Single Pulse 0.05 0.0001 0.001 0.01 0.1 1 10 rectangular Pulse Duration (Seconds) www.microsemi.com 4-5 APTGT75H120TG – Rev 1 Thermal Impedance (°C/W) 0.4 APTGT75H120TG Forward Characteristic of diode 150 VCE =600V D=50% RG=4.7Ω T J=125°C T c=75°C 50 40 ZVS 30 T J=25°C 125 100 IF (A) Fmax, Operating Frequency (kHz) Operating Frequency vs Collector Current 60 ZCS TJ=125°C 75 50 20 10 T J=125°C 25 Hard switching 0 0 0 20 40 60 IC (A) 80 100 0 120 0.4 0.8 1.2 1.6 V F (V) 2 2.4 maximum Effective Transient Thermal Impedance, Junction to case vs Pulse Duration Thermal Impedance (°C/W) 0.6 0.9 Diode 0.5 0.7 0.4 0.3 0.2 0.1 0.5 0.3 0.1 0.05 0 0.00001 Single Pulse 0.0001 0.001 0.01 0.1 1 10 Microsemi reserves the right to change, without notice, the specifications and information contained herein Microsemi's products are covered by one or more of U.S patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522 5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 and foreign patents. U.S and Foreign patents pending. All Rights Reserved. www.microsemi.com 5-5 APTGT75H120TG – Rev 1 July, 2006 rectangular Pulse Duration (Seconds)