APTGT75SK120TG Buck chopper Fast Trench + Field Stop IGBT® Power Module Q1 G1 E1 O UT 0/VBUS SENSE 0/VBU S 0/VBUS SENSE VBUS E1 G1 0/VBUS 0/VBUS SENSE NTC1 OUT OUT NTC2 NTC1 Features • Fast Trench + Field Stop IGBT® Technology - Low voltage drop - Low tail current - Switching frequency up to 20 kHz - Soft recovery parallel diodes - Low diode VF - Low leakage current - Avalanche energy rated - RBSOA and SCSOA rated • Kelvin emitter for easy drive • Very low stray inductance - Symmetrical design - Lead frames for power connections • High level of integration • Internal thermistor for temperature monitoring Benefits • Stable temperature behavior • Very rugged • Solderable terminals for easy PCB mounting • Direct mounting to heatsink (isolated package) • Low junction to case thermal resistance • Easy paralleling due to positive TC of VCEsat • Low profile • RoHS Compliant Absolute maximum ratings Symbol VCES Parameter Collector - Emitter Breakdown Voltage IC Continuous Collector Current ICM VGE PD Pulsed Collector Current Gate – Emitter Voltage Maximum Power Dissipation RBSOA Reverse Bias Safe Operating Area TC = 25°C Max ratings 1200 110 75 175 ±20 357 Tj = 125°C 150A @ 1150V TC = 25°C TC = 80°C TC = 25°C Unit V A July, 2006 NTC2 Application • AC and DC motor control • Switched Mode Power Supplies V W These Devices are sensitive to Electrostatic Discharge. Proper Handing Procedures Should Be Followed. See application note APT0502 on www.microsemi.com www.microsemi.com 1-5 APTGT75SK120TG – Rev 1 VBUS VCES = 1200V IC = 75A @ Tc = 80°C APTGT75SK120TG All ratings @ Tj = 25°C unless otherwise specified ICES Zero Gate Voltage Collector Current VCE(sat) Collector Emitter saturation Voltage VGE(th) IGES Gate Threshold Voltage Gate – Emitter Leakage Current Test Conditions VGE = 0V, VCE = 1200V Tj = 25°C VGE =15V IC = 75A Tj = 125°C VGE = VCE , IC = 3 mA VGE = 20V, VCE = 0V Dynamic Characteristics Symbol Cies Coes Cres Td(on) Tr Characteristic Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-on Delay Time Rise Time Td(off) Tf Td(on) Tr Turn-off Delay Time Fall Time Turn-on Delay Time Rise Time Td(off) Tf Turn-off Delay Time Fall Time Eon Turn-on Switching Energy Eoff Turn-off Switching Energy Min Test Conditions VGE = 0V VCE = 25V f = 1MHz Inductive Switching (25°C) VGE = ±15V VBus = 600V IC = 75A R G = 4.7Ω Inductive Switching (125°C) VGE = ±15V VBus = 600V IC = 75A R G = 4.7Ω VGE = ±15V Tj = 125°C VBus = 600V IC = 75A Tj = 125°C R G = 4.7Ω VRRM IRM Test Conditions IF DC Forward Current VF Diode Forward Voltage trr Reverse Recovery Time Qrr Reverse Recovery Charge Er Reverse Recovery Energy Typ 5340 280 240 260 30 Max Unit 250 2.1 µA 6.5 400 V nA Max Unit ns ns 520 90 7 mJ 8.1 Typ Max 1200 VR=1200V IF = 75A IF = 75A VR = 600V di/dt =2000A/µs www.microsemi.com Unit V Tj = 25°C Tj = 125°C Tc = 80°C Tj = 25°C Tj = 125°C Tj = 25°C Tj = 125°C Tj = 25°C Tj = 125°C Tj = 25°C Tj = 125°C V pF 420 70 285 50 Min Maximum Peak Repetitive Reverse Voltage Maximum Reverse Leakage Current 1.7 2.0 5.0 Min Chopper diode ratings and characteristics Symbol Characteristic 1.4 Typ 250 500 75 1.5 1.4 150 250 7 13.5 3.7 7.2 µA A 2.0 V ns July, 2006 Symbol Characteristic µC mJ 2-5 APTGT75SK120TG – Rev 1 Electrical Characteristics APTGT75SK120TG Temperature sensor NTC (see application note APT0406 on www.microsemi.com for more information). Symbol Characteristic R25 Resistance @ 25°C B 25/85 T25 = 298.15 K RT = R 25 Max Unit kΩ K Min Typ Max 0.35 0.48 Unit T: Thermistor temperature Symbol Characteristic VISOL TJ TSTG TC Torque Wt Typ 50 3952 1 1 RT : Thermistor value at T exp B 25 / 85 − T25 T Thermal and package characteristics RthJC Min IGBT Diode Junction to Case Thermal Resistance RMS Isolation Voltage, any terminal to case t =1 min, I isol<1mA, 50/60Hz Operating junction temperature range Storage Temperature Range Operating Case Temperature Mounting torque Package Weight To Heatsink M5 2500 -40 -40 -40 2.5 °C/W V 150 125 125 4.7 160 °C N.m g July, 2006 SP4 Package outline (dimensions in mm) See application note APT0501 - Mounting Instructions for SP4 Power Modules on www.microsemi.com www.microsemi.com 3-5 APTGT75SK120TG – Rev 1 ALL DIMENSIO NS MARKED " * " ARE T OLERENCED AS : APTGT75SK120TG Typical Performance Curve Output Characteristics (V GE=15V) Output Characteristics 150 150 T J = 125°C 125 T J=25°C VGE =17V TJ =125°C 75 VGE=15V 75 50 50 25 25 0 VGE =9V 0 0 1 2 V CE (V) 3 0 4 16 TJ =25°C 125 E (mJ) IC (A) 12 75 50 2 VCE (V) VCE = 600V VGE = 15V RG = 4.7Ω T J = 125°C 14 T J=125°C 100 1 3 4 Energy losses vs Collector Current Transfert Characteristics 150 10 Eon Eoff Er 8 6 4 TJ=125°C 25 Er 2 0 0 5 6 7 8 9 10 11 0 12 25 50 Switching Energy Losses vs Gate Resistance 100 125 150 Reverse Bias Safe Operating Area 16 175 Eon 14 75 IC (A) VGE (V) 150 12 125 10 Eoff Eoff IC (A) E (mJ) VGE =13V 100 100 IC (A) IC (A) 125 8 6 V CE = 600V V GE =15V I C = 75A T J = 125°C 4 2 Er 100 75 VGE=15V T J=125°C RG=4.7Ω 50 25 0 0 0 4 8 12 16 20 24 Gate Resistance (ohms) 28 32 0 400 800 VCE (V) 1200 1600 maximum Effective Transient Thermal Impedance, Junction to Case vs Pulse Duration 0.3 0.25 IGBT 0.9 0.7 0.2 0.5 0.15 0.3 0.1 0.1 0.05 July, 2006 0.35 Single Pulse 0.05 0 0.00001 0.0001 0.001 0.01 0.1 1 10 rectangular Pulse Duration (Seconds) www.microsemi.com 4-5 APTGT75SK120TG – Rev 1 Thermal Impedance (°C/W) 0.4 APTGT75SK120TG Forward Characteristic of diode 200 VCE=600V D=50% RG =4.7Ω TJ=125°C 50 ZVS 40 175 125 Tc=75°C 30 TJ =25°C 150 IF (A) Fmax, Operating Frequency (kHz) Operating Frequency vs Collector Current 60 ZCS T J=125°C 100 75 20 50 10 Hard switching TJ=125°C 25 0 0 0 20 40 60 IC (A) 80 100 0 120 0.4 0.8 1.2 1.6 V F (V) 2 2.4 maximum Effective Transient Thermal Impedance, Junction to Case vs Pulse Duration Thermal Impedance (°C/W) 0.5 0.9 0.4 0.3 Diode 0.7 0.5 0.2 0.3 0.1 0.1 0.05 0 0.00001 Single Pulse 0.0001 0.001 0.01 0.1 1 10 Microsemi reserves the right to change, without notice, the specifications and information contained herein Microsemi's products are covered by one or more of U.S patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522 5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 and foreign patents. U.S and Foreign patents pending. All Rights Reserved. www.microsemi.com 5-5 APTGT75SK120TG – Rev 1 July, 2006 rectangular Pulse Duration (Seconds)