TC2997D REV3_20050418 2.45 GHz 20 W Flange Ceramic Packaged GaAs Power FETs PHOTO ENLARGEMENT FEATURES • 20W Typical Power at 2.45 GHz • 10dB Typical Linear Power Gain at 2.45 GHz • High Linearity: IP3 = 52 dBm Typical • High Power Added Efficiency: Nominal PAE of 40 % • Suitable for High Reliability Application • Wg = 50 mm • 100 % DC and RF Tested • Flange Ceramic Package DESCRIPTION The TC2997D is a packaged Pseudomorphic High Electron Mobility Transistor (PHEMT) power transistor with input prematched circuits. The flange ceramic package provides the best thermal conductivity for the GaAs FET. All devices are 100% DC and RF tested to assure consistent quality. Typical applications include high dynamic range power amplifiers for commercial applications. ELECTRICAL SPECIFICATIONS ( VDS = 10.5V, IDS = 5A @ 2.45GHz ) Symbol CONDITIONS MIN TYP Output Power at 1dB Gain Compression Point 42 43 GL Linear Power Gain 9 10 dB IP3 Intercept Point of the 3rd-order Intermodulation *PSCL = 32 dBm 52 dBm P1dB MAX UNIT dBm PAE Power Added Efficiency at 1dB Compression Power 40 % IDSS Saturated Drain-Source Current at VDS = 2 V, VGS = 0 V 12.5 A gm Transconductance at VDS = 2 V, VGS = 0 V 9000 mS VP Pinch-off Voltage at VDS = 2 V, ID = 60 mA -1.7 Volts 22 Volts 0.9 °C/W BVDGO Rth Drain-Gate Breakdown Voltage at IDGO =15 mA Thermal Resistance 20 * PSCL: Output Power of Single Carrier Level. TRANSCOM, INC., 90 Dasoong 7th Road, Tainan Science-Based Industrial Park, Hsin-She Shiang, Tainan County, Taiwan, R.O.C. Web-Site: www.transcominc.com.tw Phone: 886-6-5050086 Fax: 886-6-5051602 P1/3 TC2997D REV3_20050418 ABSOLUTE MAXIMUM RATINGS at 25 °C Symbol VDS VGS IDS Pin PT TCH TSTG Parameter Drain-Source Voltage Gate-Source Voltage Drain Current RF Input Power, CW Continuous Dissipation Channel Temperature Storage Temperature Rating 12 V -5 V IDSS 37 dBm 100 W 175 °C - 65 °C to +175 °C HANDLING PRECAUTIONS: The user must operate in a clean, dry environment. Electrostatic Discharge (ESD) precautions should be observed at all stages of storage, handling, assembly, and testing. The static discharge must be less than 300V. FLANGE PACKAGE OUTLINE (in mm) Gate Source Source Drain TRANSCOM, INC., 90 Dasoong 7th Road, Tainan Science-Based Industrial Park, Shanhua Jen, Tainan County, Taiwan, R.O.C. Web-Site: www.transcominc.com.tw Phone: 886-6-5050086 Fax: 886-6-5051602 P2/3 TC2997D REV3_20050418 EVALUATION BOARD 1206 -Vg Thickness = 31 mil TC2997D Unit: mil Co7, 10uF Co5, 1000pF Ci4, 1000pF 386-350013-001 Co2, 1.2pF (ATC) Ci2, 2pF RF in Co6, 0.1uF 1206 Ci5, 0.1uF 1206 R1, 3.9 ohm ER = 4.6 Ci6, 10uF +Vds 0805 PCB Material: FR4 RFout Co3, 1.2pF (ATC) 0805 Ci1, 0.75pF Ci3, 1.2pF 0805 0805 Co4, 1pF (ATC) Co1, 1pF (ATC) Evaluation Board Parts List Qt'y Description 1 2 Chip Resistor(1206)3.9Ω±5% Chip CAP(0603)0.75PF±5% Chip CAP(0603)2PF±5% Chip CAP(0603)1.2PF±5% Chip CAP(0603)1000PF±10% Chip CAP(0603)0.1µF±20% R1 Ci1 Ci2 Ci3 Ci4, Co5 Ci5, Co6 2 Chip CAP(1206)10µF±20% Ci6, Co7 2 Chip CAP(0805)1PF±0.1PF Co1, Co4 2 Chip CAP(0805)1.2PF±0.1PF Co2, Co3 1 1 1 2 Reference Designator Manufacturer Murata Murata Murata Murata Murata Inventory ID Chip Resistor(1206) 3.9Ω±5% GRM39COG0R75C50V GRM39COG2RC50V GRM39COG1R2C50V GRM39X7R102K50V GRM39Y5V104Z25V GRM42-6Y5V106Z25V Murata (GRM31CF5E106ZA01L) ATC 600F 1RBT American Technical Ceramics (1pF±0.1pF 250WVDC) ATC 600F 1R2BT American Technical Ceramics (1.2pF±0.1pF 250WVDC) TRANSCOM, INC., 90 Dasoong 7th Road, Tainan Science-Based Industrial Park, Shanhua Jen, Tainan County, Taiwan, R.O.C. Web-Site: www.transcominc.com.tw Phone: 886-6-5050086 Fax: 886-6-5051602 P3/3