TRANSCOM TC2997D

TC2997D
REV3_20050418
2.45 GHz 20 W Flange Ceramic Packaged GaAs Power FETs
PHOTO ENLARGEMENT
FEATURES
• 20W Typical Power at 2.45 GHz
• 10dB Typical Linear Power Gain at 2.45 GHz
• High Linearity: IP3 = 52 dBm Typical
• High Power Added Efficiency: Nominal PAE of 40 %
• Suitable for High Reliability Application
• Wg = 50 mm
• 100 % DC and RF Tested
• Flange Ceramic Package
DESCRIPTION
The TC2997D is a packaged Pseudomorphic High Electron Mobility Transistor (PHEMT) power transistor
with input prematched circuits. The flange ceramic package provides the best thermal conductivity for the
GaAs FET. All devices are 100% DC and RF tested to assure consistent quality. Typical applications include
high dynamic range power amplifiers for commercial applications.
ELECTRICAL SPECIFICATIONS ( VDS = 10.5V, IDS = 5A @ 2.45GHz )
Symbol
CONDITIONS
MIN
TYP
Output Power at 1dB Gain Compression Point
42
43
GL
Linear Power Gain
9
10
dB
IP3
Intercept Point of the 3rd-order Intermodulation *PSCL = 32 dBm
52
dBm
P1dB
MAX
UNIT
dBm
PAE
Power Added Efficiency at 1dB Compression Power
40
%
IDSS
Saturated Drain-Source Current at VDS = 2 V, VGS = 0 V
12.5
A
gm
Transconductance at VDS = 2 V, VGS = 0 V
9000
mS
VP
Pinch-off Voltage at VDS = 2 V, ID = 60 mA
-1.7
Volts
22
Volts
0.9
°C/W
BVDGO
Rth
Drain-Gate Breakdown Voltage at IDGO =15 mA
Thermal Resistance
20
* PSCL: Output Power of Single Carrier Level.
TRANSCOM, INC., 90 Dasoong 7th Road, Tainan Science-Based Industrial Park, Hsin-She Shiang, Tainan County, Taiwan, R.O.C.
Web-Site: www.transcominc.com.tw
Phone: 886-6-5050086
Fax: 886-6-5051602
P1/3
TC2997D
REV3_20050418
ABSOLUTE MAXIMUM RATINGS at 25 °C
Symbol
VDS
VGS
IDS
Pin
PT
TCH
TSTG
Parameter
Drain-Source Voltage
Gate-Source Voltage
Drain Current
RF Input Power, CW
Continuous Dissipation
Channel Temperature
Storage Temperature
Rating
12 V
-5 V
IDSS
37 dBm
100 W
175 °C
- 65 °C to +175 °C
HANDLING PRECAUTIONS:
The user must operate in a clean, dry environment.
Electrostatic Discharge (ESD) precautions should be
observed at all stages of storage, handling, assembly,
and testing. The static discharge must be less than 300V.
FLANGE PACKAGE OUTLINE (in mm)
Gate
Source
Source
Drain
TRANSCOM, INC., 90 Dasoong 7th Road, Tainan Science-Based Industrial Park, Shanhua Jen, Tainan County, Taiwan, R.O.C.
Web-Site: www.transcominc.com.tw
Phone: 886-6-5050086
Fax: 886-6-5051602
P2/3
TC2997D
REV3_20050418
EVALUATION BOARD
1206
-Vg
Thickness = 31 mil
TC2997D
Unit: mil
Co7,
10uF
Co5,
1000pF
Ci4, 1000pF
386-350013-001
Co2,
1.2pF
(ATC)
Ci2,
2pF
RF in
Co6,
0.1uF
1206
Ci5,
0.1uF
1206
R1, 3.9 ohm
ER = 4.6
Ci6, 10uF
+Vds
0805
PCB Material: FR4
RFout
Co3,
1.2pF
(ATC)
0805
Ci1,
0.75pF
Ci3,
1.2pF
0805
0805
Co4,
1pF
(ATC)
Co1,
1pF
(ATC)
Evaluation Board Parts List
Qt'y
Description
1
2
Chip Resistor(1206)3.9Ω±5%
Chip CAP(0603)0.75PF±5%
Chip CAP(0603)2PF±5%
Chip CAP(0603)1.2PF±5%
Chip CAP(0603)1000PF±10%
Chip CAP(0603)0.1µF±20%
R1
Ci1
Ci2
Ci3
Ci4, Co5
Ci5, Co6
2
Chip CAP(1206)10µF±20%
Ci6, Co7
2
Chip CAP(0805)1PF±0.1PF
Co1, Co4
2
Chip CAP(0805)1.2PF±0.1PF Co2, Co3
1
1
1
2
Reference Designator
Manufacturer
Murata
Murata
Murata
Murata
Murata
Inventory ID
Chip Resistor(1206) 3.9Ω±5%
GRM39COG0R75C50V
GRM39COG2RC50V
GRM39COG1R2C50V
GRM39X7R102K50V
GRM39Y5V104Z25V
GRM42-6Y5V106Z25V
Murata
(GRM31CF5E106ZA01L)
ATC 600F 1RBT
American Technical Ceramics (1pF±0.1pF 250WVDC)
ATC 600F 1R2BT
American Technical Ceramics (1.2pF±0.1pF 250WVDC)
TRANSCOM, INC., 90 Dasoong 7th Road, Tainan Science-Based Industrial Park, Shanhua Jen, Tainan County, Taiwan, R.O.C.
Web-Site: www.transcominc.com.tw
Phone: 886-6-5050086
Fax: 886-6-5051602
P3/3