TC1706 REV5_20070502 3 W High Linearity and High Efficiency GaAs Power FETs FEATURES ! 3W Typical Power at 6 GHz PHOTO ENLARGEMENT ! Linear Power Gain: GL = 11 dB Typical at 6 GHz ! High Linearity: IP3 = 45 dBm Typical at 6 GHz ! Via Hole Source Ground ! Suitable for High Reliability Application ! Breakdown Voltage: BVDGO ≥ 18 V ! Lg = 0.6 µm*, Wg = 7.5 mm ! High Power Added Efficiency: Nominal PAE of 43 % at 6 GHz ! Tight Vp ranges control ! High RF input power handling capability ! 100 % DC Tested DESCRIPTION The TC1706 is a GaAs Pseudomorphic High Electron Mobility Transistor (PHEMT), which has high linearity and high Power Added Efficiency. The device is processed with a propriety via-hole process, which provides low thermal resistance and low inductance. The long gate length makes the device to have high breakdown voltage. All devices are 100% DC tested to assure consistent quality. Bond pads are gold plated for either thermo-compression or thermo-sonic wire bonding. Backside gold plating is compatible with standard AuSn die-attach. Typical applications include commercial and military high performance power amplifiers. ELECTRICAL SPECIFICATIONS (TA=25 °C) Symbol Conditions P1dB Output Power at 1dB Gain Compression Point , f GL Linear Power Gain , f = 6 GHz VDS = 8 V, IDS = 750 mA MIN TYP 34.5 35.5 dBm 10 11 dB = 6 GHz VDS = 8 V, IDS = 750 mA rd MAX IP3 Intercept Point of the 3 -order Intermodulation, f = 6 GHz VDS = 8V, IDS = 750mA,**PSCL = 21 dBm 45 dBm PAE Power Added Efficiency at 1dB Compression Power, f 43 % IDSS Saturated Drain-Source Current at VDS = 2 V, VGS = 0 V 1.8 A = 6 GHz gm Transconductance at VDS = 2 V, VGS = 0 V 1275 mS VP Pinch-off Voltage at VDS = 2 V, ID = 15 mA -1.7*** Volts 22 Volts 4 °C/W BVDGO Drain-Gate Breakdown Voltage at IDGO = 3.75 mA Rth 18 Thermal Resistance Note: * UNIT FET with 0.35 µm gate length is available for high frequency operation. Please contact factory for detail. ** PSCL: Output Power of Single Carrier Level. *** For the tight control of the pinch-off voltage . TC1706’s are divided into 3 groups: (1)TC1706P1519 : Vp = -1.5V to -1.9V (2) TC1706P1620 : Vp = -1.6V to -2.0V (3)TC1706P1721 : Vp = -1.7V to -2.1V In addition, the customers may specify their requirements. TRANSCOM, INC., 90 Dasoong 7th Road, Tainan Science-Based Industrial Park, Hsin-She Shiang, Tainan County, Taiwan, R.O.C. Web-Site: www.transcominc.com.tw Phone: 886-6-5050086 Fax: 886-6-5051602 1/4 TC1706 REV5_20070502 ABSOLUTE MAXIMUM RATINGS (TA=25 °C) Symbol VDS VGS IDS Pin PT TCH TSTG Parameter Drain-Source Voltage Gate-Source Voltage Drain Current RF Input Power, CW Continuous Dissipation Channel Temperature Storage Temperature Rating 12 V -5 V IDSS 31.5 dBm 11.5 W 175 °C - 65 °C to +175 °C CHIP DIMENSIONS 1510 ! 12 D D D D D D Units: Micrometers Chip Thickness: 50 470! 12 Gate Pad: 76.0 x 59.5 Drain Pad: 86.0 x 76.0 G G G G G G CHIP HANDLING DIE ATTACHMENT: Conductive epoxy or eutectic die attach is recommended. Eutectic die attach can be accomplished with Au-Sn (80%Au-20%Sn) perform at stage temperature: 290°C ± 5°C; Handling Tool: Tweezers; Time: less than 1min. WIRE BONDING: The recommended wire bond method is thermocompression bonding with 0.7 to 1.0 mil (0.018 to 0.025 mm) gold wire. Stage temperature: 220°C to 250°C; Bond Tip Temperature: 150°C; Bond Force: 20 to 30 gms depending on size of wire and Bond Tip Temperature. HANDLING PRECAUTIONS: The user must operate in a clean, dry environment. Care should be exercised during handling avoid damage to the devices. Electrostatic Discharge (ESD) precautions should be observed at all stages of storage, handling, assembly, and testing. The static discharge must be less than 300V. TRANSCOM, INC., 90 Dasoong 7th Road, Tainan Science-Based Industrial Park, Hsin-She Shiang, Tainan County, Taiwan, R.O.C. Web-Site: www.transcominc.com.tw Phone: 886-6-5050086 Fax: 886-6-5051602 2/4 TC1706 REV5_20070502 0. 0 4. 0 5. 15 75 30 0 15 165 10.0 3.0 4.0 5.0 2.0 0.8 1.0 0.6 45 4 0.2 0.4 60 0 2. 0 0 5 0.2 Swp Max 18 GHz 13 3. S11 10.0 0 90 0.8 6 Mag Max 0.02 Swp Max 18GHz 12 0. (TA=25 °C) VDS = 8 V, IDS = 750 mA 105 1.0 TYPICAL SCATTERING PARAMETERS 0 -180 -15 -10 .0 35 45 1.0 -105 Swp Max 18GHz 2. 0 0.8 6 0. 3. 0 0 4. 0 5. 4 0.2 10.0 3.0 4.0 5.0 0.8 1.0 0.6 0.2 0 0 0.4 10.0 165 2.0 60 75 20 -1 -2 -1.0 90 -0.8 .6 -1 0. -0 5 0 5 15 0 Swp Min 2 GHz S22 30 0 0 Swp Max 18 GHz 13 15 -3 -75 0.005 Per Div Swp Min 2GHz -90 105 12 Mag Max 3 S12 50 -6 .0 .4 -1 -4 -0 -165 -3 . -4 0 -5..0 0 - 0.2 -180 -15 S21 ANG -38.565 -69.959 -108.9 -129.07 -140.71 -148.14 -153.26 -156.99 -159.83 -162.05 -163.84 -165.32 -166.55 -167.6 -168.51 -169.29 -169.98 -170.59 -171.14 -171.63 S11 MAG 34.809 30.076 21.191 15.622 12.198 9.9507 8.3803 7.227 6.3465 5.6531 5.0934 4.6322 4.2457 3.9171 3.6342 3.3882 3.1723 2.9811 2.8107 2.6578 ANG 159.97 143.72 123.5 112.78 106.31 101.92 98.668 96.103 93.979 92.156 90.547 89.095 87.763 86.524 85.359 84.255 83.2 82.186 81.207 80.259 S21 S12 MAG 0.0056861 0.0098259 0.013846 0.015311 0.015941 0.016255 0.016427 0.016528 0.016587 0.016622 0.01664 0.016647 0.016645 0.016636 0.016622 0.016604 0.016582 0.016557 0.016529 0.016498 S12 -2 .0 .6 Swp Min 2 GHz S11 MAG 0.99534 0.98622 0.97253 0.96632 0.96342 0.96192 0.96106 0.96054 0.96021 0.95999 0.95984 0.95975 0.95969 0.95966 0.95966 0.95966 0.95968 0.95971 0.95975 0.9598 .4 -0 -105 20 0 -1 -1 5 35 -4 -0 -6 -75 FREQUENCY (GHz) 0.05 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1 1.1 1.2 1.3 1.4 1.5 1.6 1.7 1.8 1.9 FREQUENCY -90 1 Per Div 2 -1.0 50 -0. 0 -0.8 -3 -3 .0 -4 -5..0 0 -1 S21 -10.0 -165 Swp Min 2GHz S22 ANG 70.259 54.292 34.653 24.509 18.615 14.8 12.125 10.136 8.5891 7.3428 6.3104 5.4359 4.6812 4.0198 3.4328 2.906 2.4291 1.994 1.5944 1.2255 MAG 0.38223 0.46827 0.57268 0.61412 0.63271 0.64251 0.64843 0.65243 0.65542 0.65783 0.65993 0.66184 0.66366 0.66544 0.6672 0.66898 0.67079 0.67263 0.67453 0.67647 ANG -164.03 -160.28 -163.71 -167.19 -169.39 -170.76 -171.63 -172.2 -172.56 -172.79 -172.91 -172.97 -172.97 -172.93 -172.86 -172.77 -172.66 -172.54 -172.4 -172.26 S22 TRANSCOM, INC., 90 Dasoong 7th Road, Tainan Science-Based Industrial Park, Hsin-She Shiang, Tainan County, Taiwan, R.O.C. Web-Site: www.transcominc.com.tw Phone: 886-6-5050086 Fax: 886-6-5051602 3/4 TC1706 REV5_20070502 (GHz) 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 MAG 0.95986 0.9629 0.9642 0.9656 0.9670 0.9684 0.9697 0.9709 0.9719 0.9729 0.9737 0.9745 0.9751 0.9757 0.9762 0.9766 0.9770 ANG -172.07 -174.84 -176.34 -177.31 -178.03 -178.61 -179.11 -179.55 -179.95 179.67 179.32 178.98 178.65 178.34 178.04 177.74 177.45 MAG 2.5198 1.6459 1.1945 0.9188 0.7329 0.5996 0.5000 0.4233 0.3629 0.3145 0.2751 0.2426 0.2155 0.1927 0.1734 0.1567 0.1424 ANG 79.338 69.42 61.60 54.48 47.95 41.96 36.46 31.41 26.78 22.51 18.58 14.95 11.60 8.49 5.61 2.94 0.46 MAG 0.016465 0.0161 0.0155 0.0149 0.0142 0.0136 0.0130 0.0124 0.0119 0.0114 0.0110 0.0107 0.0105 0.0103 0.0102 0.0101 0.0101 ANG 0.8833 -3.15 -5.08 -6.26 -6.78 -6.69 -6.03 -4.86 -3.23 -1.19 1.18 3.82 6.67 9.65 12.70 15.77 18.81 MAG 0.67846 0.6973 0.7212 0.7465 0.7714 0.7948 0.8162 0.8352 0.8520 0.8667 0.8795 0.8906 0.9003 0.9087 0.9160 0.9225 0.9282 ANG -172.12 -170.93 -169.73 -168.93 -168.53 -168.42 -168.54 -168.80 -169.16 -169.58 -170.02 -170.47 -170.93 -171.37 -171.80 -172.21 -172.61 * The data does not include gate, drain and source bond wires. SMALL SIGNAL MODEL, VDS = 8 V, IDS = 750 mA SCHEMATI Lg Cgd Rg Rd Gm Cgs Cds Ri T Rds Ld PARAMETERS Lg 0.014 nH Rs 0.177 Ohm Rg 0.155 Ohm Ls 0.002 nH Cgs 13.74 pF Cds 1.786 pF 0.308 Ohm Rds 19.83 Ohm Cgd 0.482 pF Rd 0.233 Ohm Gm 1401 mS Ld 0.002 nH Ri Rs Ls T 3.9 psec TRANSCOM, INC., 90 Dasoong 7th Road, Tainan Science-Based Industrial Park, Hsin-She Shiang, Tainan County, Taiwan, R.O.C. Web-Site: www.transcominc.com.tw Phone: 886-6-5050086 Fax: 886-6-5051602 4/4