TC1606 REV5_20070502 2W High Linearity and High Efficiency GaAs Power FETs FEATURES ! 2W Typical Power at 6 GHz PHOTO ENLARGEMENT ! Linear Power Gain: GL = 12 dB Typical at 6 GHz ! High Linearity: IP3 = 43 dBm Typical at 6 GHz ! Via Hole Source Ground ! Suitable for High Reliability Application ! Breakdown Voltage: BVDGO ≥ 18 V ! Lg = 0.6 µm, Wg = 5 mm ! High Power Added Efficiency: Nominal PAE of 43 % at 6 GHz ! Tight Vp ranges control ! High RF input power handling capability ! 100 % DC Tested DESCRIPTION The TC1606 is a GaAs Pseudomorphic High Electron Mobility Transistor (PHEMT) which has high linearity and high Power Added Efficiency. The device is processed with a propriety via-hole process, which provides low thermal resistance and low inductance. The long gate length makes the device to have high breakdown voltage. All devices are 100% DC tested to assure consistent quality. Bond pads are gold plated for either thermo-compression or thermo-sonic wire bonding. Backside gold plating is compatible with standard AuSn die-attach. Typical application include commercial and military high performance power amplifiers ELECTRICAL SPECIFICATIONS (TA=25 °C) Symbol Conditions P1dB Output Power at 1dB Gain Compression Point , f GL Linear Power Gain, f MIN TYP 32.5 33 dBm 11 12 dB = 6 GHz VDS = 8 V, IDS = 500 mA = 6 GHz VDS = 8 V, IDS = 500 mA rd MAX UNIT IP3 Intercept Point of the 3 -order Intermodulation, f = 6 GHz VDS = 8 V, IDS = 500 mA,*PSCL = 20 dBm 43 dBm PAE Power Added Efficiency at 1dB Compression Power, f 43 % IDSS Saturated Drain-Source Current at VDS = 2 V, VGS = 0 V 1.2 A gm Transconductance at VDS = 2 V, VGS = 0 V 850 mS VP Pinch-off Voltage at VDS = 2 V, ID = 10 mA -1.7** Volts 22 Volts 6 °C/W = 6 GHz BVDGO Drain-Gate Breakdown Voltage at IDGO = 2.5 mA Rth Thermal Resistance 18 Note: * PSCL: Output Power of Single Carrier Level. * *For the tight control of the pinch-off voltage . TC1606’s are divided into 3 groups: (1)TC1606P1519 : Vp = -1.5V to -1.9V (2) TC1606P1620 : Vp = -1.6V to -2.0V (3)TC1606P1721 : Vp = -1.7V to -2.1V In addition, the customers may specify their requirements. TRANSCOM, INC., 90 Dasoong 7th Road, Tainan Science-Based Industrial Park, Hsin-She Shiang, Tainan County, Taiwan, R.O.C. Web-Site: www.transcominc.com.tw Phone: 886-6-5050086 Fax: 886-6-5051602 1/4 TC1606 REV5_20070502 ABSOLUTE MAXIMUM RATINGS (TA=25 °C) Symbol VDS VGS IDS Pin PT TCH TSTG Parameter Rating Drain-Source Voltage Gate-Source Voltage Drain Current RF Input Power, CW Continuous Dissipation Channel Temperature Storage Temperature 12 V -5 V IDSS 30 dBm 7.7 W 175 °C - 65 °C to +175 °C CHIP DIMENSIONS 1060 ± 12 D D D D 470± 12 Units: Micrometers Chip Thickness: 50 G G G G Gate Pad: 76 x 59.5 Drain Pad: 86.0 x 76.0 TRANSCOM, INC., 90 Dasoong 7th Road, Tainan Science-Based Industrial Park, Hsin-She Shiang, Tainan County, Taiwan, R.O.C. Web-Site: www.transcominc.com.tw Phone: 886-6-5050086 Fax: 886-6-5051602 2/4 TC1606 REV5_20070502 0. 0.2 0 4. 0 5. 75 30 15 0 15 165 10.0 3.0 4.0 5.0 2.0 0.8 1.0 0.6 0.4 45 4 0.2 60 0 2. 0 10.0 0 Swp Max 18 GHz 5 13 3. S11 90 0.8 6 Mag Max 0.025 Swp Max 18GHz 0 12 0. (TA=25 °C) VDS = 8 V, IDS = 500 mA 105 1.0 TYPICAL SCATTERING PARAMETERS 0 -180 -15 -10.0 -3 . -4 0 -5..0 0 -105 1.0 0 Swp Max 18GHz 2. 6 0. Swp Min 2 GHz 3. S22 0.2 15 0 0 4. 0 5. 10.0 3.0 4.0 5.0 2.0 0.8 1.0 0.2 0 0 0.6 10.0 165 0.4 60 75 0.8 -1 35 -2 -1.0 90 -0.8 .6 -0 45 4 0 0. 0 5 30 -75 105 12 Swp Max 18 GHz -90 0.0125 Per Div Swp Min 2GHz 13 15 -3 0 0 -6 .0 .4 Mag Max 4 S12 50 -1 5 -4 -0 -165 -1 20 2 -0. -180 -15 0 S21 ANG -167.86 -172.26 -174.61 -176.14 -177.28 -178.19 -178.96 -179.65 179.72 179.13 178.58 178.06 177.55 177.06 176.59 176.13 175.67 MAG 3.3354 2.1882 1.6019 1.2440 1.0025 0.8290 0.6987 0.5980 0.5182 0.4539 0.4013 0.3576 0.3210 0.2901 0.2636 0.2408 0.2210 - 0 2. .6 Swp Min 2 GHz S11 MAG 0.9431 0.9438 0.9450 0.9464 0.9479 0.9494 0.9508 0.9522 0.9534 0.9546 0.9556 0.9565 0.9573 0.9581 0.9587 0.9593 0.9598 .4 -0 -1 05 -1 0 20 -1 5 35 -4 -0 -6 -75 FREQUENCY (GHz) 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 -90 1 Per Div 2 -1.0 50 -0. -0.8 -3 Swp Min 2GHz S12 ANG 82.58 74.07 66.85 60.39 54.50 49.13 44.21 39.72 35.61 31.86 28.44 25.31 22.46 19.86 17.48 15.32 13.35 MAG 0.0227 0.0222 0.0215 0.0206 0.0198 0.0190 0.0183 0.0177 0.0173 0.0171 0.0171 0.0173 0.0177 0.0183 0.0189 0.0197 0.0206 -3 . -4 0 -5..0 0 -1 S21 -10.0 -1 65 S22 ANG 5.17 3.12 2.57 3.02 4.33 6.46 9.33 12.85 16.87 21.23 25.73 30.21 34.51 38.53 42.20 45.51 48.46 MAG 0.5586 0.5845 0.6143 0.6460 0.6775 0.7075 0.7352 0.7602 0.7825 0.8023 0.8198 0.8351 0.8486 0.8604 0.8709 0.8801 0.8882 ANG -167.33 -165.78 -164.36 -163.42 -162.98 -162.94 -163.19 -163.63 -164.21 -164.86 -165.55 -166.25 -166.95 -167.64 -168.30 -168.95 -169.57 * The data does not include gate and drain bond wires. TRANSCOM, INC., 90 Dasoong 7th Road, Tainan Science-Based Industrial Park, Hsin-She Shiang, Tainan County, Taiwan, R.O.C. Web-Site: www.transcominc.com.tw Phone: 886-6-5050086 Fax: 886-6-5051602 3/4 TC1606 REV5_20070502 SMALL SIGNAL MODEL, VDS = 8 V, IDS = 500 mA SCHEMATI Lg PARAMETERS Rg Cgd Rd Lg 0.0196 nH Rs 0.197 Ohm Rg 0.225 Ohm Ls 0.005 nH Cgs 8.87 pF Cds 1.073 pF Ri 0.455 Ohm Rds 31.85 Ohm Cgd 0.361 pF Rd 0.315 Ohm Gm 880.6 mS Ld 0.004 nH Gm Cgs Cds Ri Ld T Rs Rds T 3.9 psec Ls CHIP HANDLING DIE ATTACHMENT: Conductive epoxy or eutectic die attach is recommended. Eutectic die attach can be accomplished with Au-Sn (80%Au-20%Sn) perform at stage temperature: 290°C ± 5°C; Handling Tool: Tweezers; Time: less than 1min. WIRE BONDING: The recommended wire bond method is thermocompression bonding with 0.7 to 1.0 mil (0.018 to 0.025 mm) gold wire. Stage temperature: 220°C to 250°C; Bond Tip Temperature: 150°C; Bond Force: 20 to 30 gms depending on size of wire and Bond Tip Temperature. HANDLING PRECAUTIONS: The user must operate in a clean, dry environment. Care should be exercised during handling avoid damage to the devices. Electrostatic Discharge (ESD) precautions should be observed at all stages of storage, handling, assembly, and testing. The static discharge must be less than 300V. TRANSCOM, INC., 90 Dasoong 7th Road, Tainan Science-Based Industrial Park, Hsin-She Shiang, Tainan County, Taiwan, R.O.C. Web-Site: www.transcominc.com.tw Phone: 886-6-5050086 Fax: 886-6-5051602 4/4