APTGF150A120T3WG Phase leg NPT IGBT Power Module 25 26 27 28 VCES = 1200V IC = 150A @ Tc = 80°C 31 Application • Welding converters Features • Non Punch Through (NPT) Fast IGBT - Low voltage drop - Low tail current - Switching frequency up to 50 kHz - Soft recovery parallel diodes - Low diode VF - Low leakage current - RBSOA and SCSOA rated • Kelvin emitter for easy drive • Very low stray inductance • High level of integration • Internal thermistor for temperature monitoring 4 3 13 14 NTC 15 16 8 7 18 19 28 27 26 25 20 22 32 29 16 30 15 31 14 32 13 2 3 4 7 Benefits • Outstanding performance at high frequency operation • Direct mounting to heatsink (isolated package) • Low junction to case thermal resistance • Solderable terminals both for power and signal for easy PCB mounting • Low profile • Easy paralleling due to positive TC of VCEsat • RoHS compliant 20 19 18 23 22 8 10 11 12 Pins 25/26/27/28 must be shorted together Pins 13/14/15/16 must be shorted together Pins 18/19/20/22 must be shorted together Absolute maximum ratings ICM VGE PD RBSOA TC = 25°C TC = 80°C TC = 25°C Continuous Collector Current Pulsed Collector Current Gate – Emitter Voltage Maximum Power Dissipation Reverse Bias Safe Operating Area TC = 25°C TJ = 150°C Max ratings 1200 210 150 300 ±20 961 300A @ 1150V Unit V May, 2009 IC Parameter Collector - Emitter Breakdown Voltage A V W These Devices are sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed. See application note APT0502 on www.microsemi.com www.microsemi.com 1-5 APTGF150A120T3WG – Rev 1 Symbol VCES APTGF150A120T3WG All ratings @ Tj = 25°C unless otherwise specified Electrical Characteristics Symbol Characteristic ICES Zero Gate Voltage Collector Current VCE(sat) Collector Emitter Saturation Voltage VGE(th) IGES Gate Threshold Voltage Gate – Emitter Leakage Current Test Conditions Min VGE = 0V, VCE = 1200V Tj = 25°C VGE =15V IC = 150A Tj = 125°C VGE = VCE , IC = 6mA VGE = 20V, VCE = 0V Typ 4.5 3.2 3.9 5.5 Min Typ Max Unit 250 3.7 µA 6.5 400 V nA Max Unit V Dynamic Characteristics Symbol Characteristic Cies Coes Cres Input Capacitance Output Capacitance Reverse Transfer Capacitance QG Gate charge Td(on) Tr Td(off) Tf Td(on) Tr Td(off) Test Conditions VGE = 0V VCE = 25V f = 1MHz VGE= ±15V ; VCE=600V IC=150A Inductive Switching (25°C) VGE = ±15V VBus = 600V IC = 150A RG = 5.6Ω Inductive Switching (125°C) VGE = ±15V VBus = 600V IC = 150A RG = 5.6Ω VGE = ±15V Tj = 125°C VBus = 600V IC = 150A Tj = 125°C RG = 5.6Ω VGE ≤15V ; VBus = 900V tp ≤ 10µs ; Tj = 125°C Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Turn-on Delay Time Rise Time Turn-off Delay Time Tf Fall Time Eon Turn-on Switching Energy Eoff Turn-off Switching Energy Isc Short Circuit data 9.3 1.4 0.7 nF 1.6 µC 120 50 310 ns 20 130 60 360 ns 30 18 mJ 8 900 A Reverse diode ratings and characteristics IRM Min IF DC Forward Current VF Diode Forward Voltage trr Reverse Recovery Time Qrr Reverse Recovery Charge Max 1200 Maximum Peak Repetitive Reverse Voltage Maximum Reverse Leakage Current Typ VR=1200V IF = 100A IF = 200A IF = 100A IF = 100A VR = 800V di/dt =200A/µs www.microsemi.com V Tj = 25°C Tj = 125°C Tc = 80°C Unit 100 500 Tj = 125°C 100 2.4 2.7 1.8 Tj = 25°C 385 Tj = 125°C Tj = 25°C 480 1055 Tj = 125°C 5240 µA A 3 May, 2009 VRRM Test Conditions V ns nC 2-5 APTGF150A120T3WG – Rev 1 Symbol Characteristic APTGF150A120T3WG Temperature sensor NTC (see application note APT0406 on www.microsemi.com for more information). Symbol R25 ∆R25/R25 B25/85 ∆B/B Characteristic Resistance @ 25°C Min Typ 50 5 3952 4 Max Unit kΩ % K % Min Typ Max 0.13 0.55 Unit T25 = 298.15 K TC=100°C RT = R25 T: Thermistor temperature 1 ⎞⎤ RT: Thermistor value at T ⎡ ⎛ 1 exp ⎢ B25 / 85 ⎜⎜ − ⎟⎟⎥ ⎝ T25 T ⎠⎦ ⎣ Thermal and package characteristics Symbol Characteristic RthJC VISOL TJ TSTG TC Torque Wt IGBT Diode Junction to Case thermal resistance RMS Isolation Voltage, any terminal to case t =1 min, I isol<1mA, 50/60Hz Operating junction temperature range Storage Temperature Range Operating Case Temperature Mounting torque Package Weight To heatsink M4 2500 -40 -40 -40 2.5 °C/W V 150 125 100 4.7 110 °C N.m g 12 See application note 1901 - Mounting Instructions for SP3 Power Modules on www.microsemi.com www.microsemi.com 3-5 APTGF150A120T3WG – Rev 1 28 17 1 May, 2009 SP3 Package outline (dimensions in mm) APTGF150A120T3WG Typical Performance Curve Output Characteristics 300 250 250 TJ=25°C 150 VGE=20V VGE=12V VGE=9V 100 TJ=125°C 50 50 0 0 0 1 2 * 3 VCE (V) 4 5 6 0 1 2 3 4 VCE (V) 5 6 Energy losses vs Collector Current Transfert Characteristics 300 56 VCE = 600V VGE = 15V RG = 5.6 Ω TJ = 125°C 48 250 40 E (mJ) 200 TJ=125°C 150 100 Eon 32 24 Eoff 16 TJ=25°C 50 8 0 0 5 6 7 8 9 10 11 0 12 50 100 150 200 250 300 IC (A) VGE (V) Switching Energy Losses vs Gate Resistance Reverse Bias Safe Operating Area 80 350 300 250 Eon IC (A) VCE = 600V VGE =15V IC = 150A TJ = 125°C 60 E (mJ) VGE=15V 150 100 IC (A) TJ = 125°C 200 200 IC (A) IC (A) Output Characteristics (VGE=15V) 300 40 200 150 VGE=15V TJ=125°C RG=5.6 Ω 100 20 Eoff 50 0 0 0 5 0 10 15 20 25 30 35 40 45 50 Gate Resistance (ohms) 300 600 900 1200 1500 VCE (V) maximum Effective Transient Thermal Impedance, Junction to Case vs Pulse Duration 0.9 0.1 0.7 0.08 0.5 0.06 IGBT May, 2009 0.12 0.3 0.04 0.02 0.1 Single Pulse 0.05 0 0.00001 0.0001 0.001 0.01 0.1 1 10 rectangular Pulse Duration (Seconds) www.microsemi.com 4-5 APTGF150A120T3WG – Rev 1 Thermal Impedance (°C/W) 0.14 APTGF150A120T3WG Forward Characteristic of diode 200 VCE=600V D=50% RG=5.6 Ω TJ=125°C TC=75°C 80 ZVS 60 150 IF (A) Fmax, Operating Frequency (kHz) Operating Frequency vs Collector Current 100 ZCS 40 TJ=125°C 100 hard switching 20 TJ=25°C 50 0 0 0 40 80 120 160 0.0 200 0.5 IC (A) 1.0 1.5 2.0 VF (V) 2.5 3.0 maximum Effective Transient Thermal Impedance, Junction to Case vs Pulse Duration Thermal Impedance (°C/W) 0.6 0.5 0.4 0.7 0.3 0.5 0.2 0.3 0.1 Diode 0.9 0.1 Single Pulse 0.05 0 0.00001 0.0001 0.001 0.01 0.1 1 10 Microsemi reserves the right to change, without notice, the specifications and information contained herein Microsemi's products are covered by one or more of U.S patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522 5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 6,939,743 7,352,045 5,283,201 5,801,417 5,648,283 7,196,634 6,664,594 7,157,886 6,939,743 7,342,262 and foreign patents. U.S and Foreign patents pending. All Rights Reserved. www.microsemi.com 5-5 APTGF150A120T3WG – Rev 1 May, 2009 rectangular Pulse Duration (Seconds)