APTGT100DA60T3AG Boost chopper Trench + Field Stop IGBT Power Module VCES = 600V IC = 100A @ Tc = 100°C Application • • • AC and DC motor control Switched Mode Power Supplies Power Factor Correction Features • 28 27 26 25 23 22 • • • • • 20 19 18 29 16 30 15 Trench + Field Stop IGBT Technology - Low voltage drop - Low tail current - Switching frequency up to 20 kHz - Soft recovery parallel diodes - Low diode VF - Low leakage current - RBSOA and SCSOA rated Very low stray inductance Kelvin emitter for easy drive Internal thermistor for temperature monitoring High level of integration AlN substrate for improved thermal performance Benefits 31 14 32 13 2 3 4 7 8 • • • 10 11 12 Pins 29/30/31/32 must be shorted together Pins 26/27/28/22/23/25 must be shorted together to achieve a phase leg Pins 16/18/19/20 must be shorted together • • Direct mounting to heatsink (isolated package) Low junction to case thermal resistance Solderable terminals both for power and signal for easy PCB mounting Low profile RoHS Compliant Parameter Collector - Emitter Breakdown Voltage IC Continuous Collector Current ICM VGE PD Pulsed Collector Current Gate – Emitter Voltage Maximum Power Dissipation RBSOA TC = 25°C TC = 100°C TC = 25°C TC = 25°C Reverse Bias Safe Operating Area Tj = 150°C Max ratings 600 150 100 200 ±20 416 Unit V A V W 200A @ 550V These Devices are sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed. See application note APT0502 on www.microsemi.com www.microsemi.com 1–5 APTGT100DA60T3AG – Rev 0 Symbol VCES May, 2009 Absolute maximum ratings APTGT100DA60T3AG All ratings @ Tj = 25°C unless otherwise specified Electrical Characteristics Symbol Characteristic ICES Zero Gate Voltage Collector Current VCE(sat) Collector Emitter Saturation Voltage VGE(th) IGES Gate Threshold Voltage Gate – Emitter Leakage Current Test Conditions Min VGE = 0V, VCE = 600V Tj = 25°C VGE =15V IC = 100A Tj = 150°C VGE = VCE , IC = 1.5 mA VGE = 20V, VCE = 0V 5.0 Typ 1.5 1.7 5.8 Max Unit 250 1.9 µA 6.5 400 V nA Max Unit V Dynamic Characteristics Symbol Cies Coes Cres QG Td(on) Tr Td(off) Tf Characteristic Input Capacitance Output Capacitance Reverse Transfer Capacitance Test Conditions VGE = 0V VCE = 25V f = 1MHz VGE= ±15V ; VCE=300V IC=100A Inductive Switching (25°C) VGE = ±15V VBus = 300V IC = 100A RG = 3.3Ω Inductive Switching (150°C) VGE = ±15V VBus = 300V IC = 100A RG = 3.3Ω VGE = ±15V Tj = 25°C VBus = 300V Tj = 150°C IC = 100A Tj = 25°C RG = 3.3Ω Tj = 150°C Gate charge Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Td(on) Tr Turn-on Delay Time Rise Time Td(off) Turn-off Delay Time Tf Fall Time Eon Turn on Energy Eoff Turn off Energy Isc Short Circuit data Min Typ 6100 390 190 pF 1.1 µC 115 45 225 ns 55 130 50 ns 300 70 0.4 0.875 2.5 3.5 VGE ≤15V ; VBus = 360V tp ≤ 6µs ; Tj = 150°C mJ mJ 500 A Chopper diode ratings and characteristics IF Maximum Reverse Leakage Current VR=600V DC Forward Current VF Diode Forward Voltage trr Reverse Recovery Time Qrr Reverse Recovery Charge Er Reverse Recovery Energy Min 600 Tj = 25°C Tj = 150°C IF = 100A VR = 300V di/dt =2500A/µs www.microsemi.com Max 150 400 Tj = 25°C Tj = 150°C Tj = 25°C Tj = 150°C Tj = 25°C 100 1.6 1.5 100 150 5.1 Tj = 150°C Tj = 25°C 10.7 1.2 Tj = 150°C 2.4 Tc = 100°C IF = 100A VGE = 0V Typ Unit V µA A 2 V May, 2009 IRM Test Conditions ns µC mJ 2–5 APTGT100DA60T3AG – Rev 0 Symbol Characteristic VRRM Maximum Peak Repetitive Reverse Voltage APTGT100DA60T3AG Thermal and package characteristics Symbol Characteristic RthJC VISOL TJ TSTG TC Torque Wt Min Typ IGBT Diode Junction to Case Thermal Resistance RMS Isolation Voltage, any terminal to case t =1 min, I isol<1mA, 50/60Hz Operating junction temperature range Storage Temperature Range Operating Case Temperature Mounting torque Package Weight To heatsink M4 2500 -40 -40 -40 2.5 Max 0.36 0.57 Unit °C/W V 175 125 100 4.7 110 °C N.m g Temperature sensor NTC (see application note APT0406 on www.microsemi.com for more information). Symbol R25 ∆R25/R25 B25/85 ∆B/B Characteristic Resistance @ 25°C Min T25 = 298.15 K TC=100°C RT = R25 Typ 50 5 3952 4 Max Unit kΩ % K % T: Thermistor temperature ⎡ ⎛ 1 1 ⎞⎤ RT: Thermistor value at T − ⎟⎟⎥ exp ⎢ B25 / 85 ⎜⎜ ⎝ T25 T ⎠⎦ ⎣ SP3 Package outline (dimensions in mm) 12 See application note 1901 - Mounting Instructions for SP3 Power Modules on www.microsemi.com www.microsemi.com 3–5 APTGT100DA60T3AG – Rev 0 May, 2009 28 17 1 APTGT100DA60T3AG Typical Performance Curve Output Characteristics (VGE=15V) Output Characteristics 200 200 TJ=25°C 175 TJ=150°C 125 IC (A) IC (A) 150 TJ=125°C 150 100 75 50 0.5 1 1.5 VCE (V) 0 2 2.5 0 3 7 175 1 1.5 2 VCE (V) 150 5 E (mJ) 125 100 TJ=125°C TJ=150°C TJ=25°C 4 Er 3 5 6 7 Eon 0 0 8 9 10 11 0 12 25 50 75 100 125 150 175 200 IC (A) VGE (V) Switching Energy Losses vs Gate Resistance Reverse Bias Safe Operating Area 250 VCE = 300V VGE =15V IC = 100A TJ = 150°C 200 Eoff Eon IF (A) E (mJ) 3.5 Eoff 1 25 6 3 2 50 8 2.5 VCE = 300V VGE = 15V RG = 3.3Ω TJ = 150°C 6 TJ=25°C 75 0.5 Energy losses vs Collector Current Transfert Characteristics 200 IC (A) VGE=9V 25 TJ=25°C 0 VGE=15V 100 50 0 VGE=13V 125 75 25 VGE=19V TJ = 150°C 175 4 150 100 2 Er VGE=15V TJ=150°C RG=3.3Ω 50 Eon 0 0 0 5 10 15 20 25 Gate Resistance (ohms) 30 0 100 200 300 400 VCE (V) 500 600 700 Maximum Effective Transient Thermal Impedance, Junction to Case vs Pulse Duration IGBT 0.9 0.2 0.7 May, 2009 0.3 0.5 0.3 0.1 0.1 0.05 0 0.00001 Single Pulse 0.0001 0.001 0.01 0.1 1 10 Rectangular Pulse Duration in Seconds www.microsemi.com 4–5 APTGT100DA60T3AG – Rev 0 Thermal Impedance (°C/W) 0.4 APTGT100DA60T3AG Forward Characteristic of diode 200 VCE=300V D=50% RG=3.3Ω TJ=150°C ZCS 75 ZVS 175 150 125 Tc=85°C IF (A) Fmax, Operating Frequency (kHz) Operating Frequency vs Collector Current 100 50 100 TJ=125°C 75 25 TJ=150°C 50 Hard switching 25 TJ=25°C 0 0 25 50 75 100 125 0 150 0.4 IC (A) 0.8 1.2 1.6 VF (V) 2 2.4 Maximum Effective Transient Thermal Impedance, Junction to Case vs Pulse Duration Thermal Impedance (°C/W) 0.6 0.9 0.5 0.4 Diode 0.7 0.3 0.5 0.2 0.3 0.1 0.1 0.05 0 0.00001 Single Pulse 0.0001 0.001 0.01 0.1 1 10 Microsemi reserves the right to change, without notice, the specifications and information contained herein Microsemi's products are covered by one or more of U.S patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522 5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 6,939,743 7,352,045 5,283,201 5,801,417 5,648,283 7,196,634 6,664,594 7,157,886 6,939,743 7,342,262 and foreign patents. U.S and Foreign patents pending. All Rights Reserved. www.microsemi.com 5–5 APTGT100DA60T3AG – Rev 0 May, 2009 Rectangular Pulse Duration in Seconds