TRANSCOM TC2997C

TC2997C
PRE3_20050418
Preliminary
2.1 GHz 20 W Flange Ceramic Packaged GaAs Power FETs
FEATURES
PHOTO ENLARGEMENT
• 20 W Typical Power at 2.1 GHz
• 12 dB Typical Linear Power Gain at 2.1 GHz
• High Linearity: IP3 = 52 dBm Typical
• High Power Added Efficiency: Nominal PAE of 40 %
• Suitable for High Reliability Application
• Wg = 50 mm
• 100 % DC and RF Tested
• Flange Ceramic Package
DESCRIPTION
The TC2997C is a packaged Pseudomorphic High Electron Mobility Transistor (PHEMT) power
transistor with input prematched circuits. The flange ceramic package provides the best thermal
conductivity for the GaAs FET. All devices are 100% DC and RF tested to assure consistent quality.
Typical applications include high dynamic range power amplifier for commercial applications.
ELECTRICAL SPECIFICATIONS (@ 2.1 GHz )
Symbol
P1dB
CONDITIONS
MIN
TYP
MAX
UNIT
Output Power at 1dB Gain Compression Point
42
43
11
12
dB
52
dBm
dBm
GL
Linear Power Gain
IP3
Intercept Point of the 3rd-order Intermodulation, *PSCL = 32 dBm
PAE
Power Added Efficiency at 1dB Compression Power
40
%
IDSS
Saturated Drain-Source Current at VDS = 2 V, VGS = 0 V
12.5
A
gm
Transconductance at VDS = 2 V, VGS = 0 V
9000
mS
VP
Pinch-off Voltage at VDS = 2 V, ID = 60 mA
-1.7
Volts
22
Volts
0.9
°C/W
BVDGO
Rth
Drain-Gate Breakdown Voltage at IDGO =15 mA
Thermal Resistance
20
* PSCL: Output Power of Single Carrier Level.
TRANSCOM, INC., 90 Dasoong 7th Road, Tainan Science-Based Industrial Park, Hsin-She Shiang, Tainan County, Taiwan, R.O.C.
Web-Site: www.transcominc.com.tw
Phone: 886-6-5050086
Fax: 886-6-5051602
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TC2997C
PRE3_20050418
ABSOLUTE MAXIMUM RATINGS at 25 °C
Symbol
VDS
VGS
IDS
Pin
PT
TCH
TSTG
Parameter
Drain-Source Voltage
Gate-Source Voltage
Drain Current
RF Input Power, CW
Continuous Dissipation
Channel Temperature
Storage Temperature
Rating
12 V
-5 V
IDSS
37 dBm
100 W
175 °C
- 65 °C to +175 °C
HANDLING PRECAUTIONS:
The user must operate in a clean, dry environment.
Electrostatic Discharge (ESD) precautions should be
observed at all stages of storage, handling, assembly, and
testing. The static discharge must be less than 300V.
FLANGE PACKAGE OUTLINE (in mm)
Gate
Source
Source
Drain
TRANSCOM, INC., 90 Dasoong 7th Road, Tainan Science-Based Industrial Park, Shanhua Jen, Tainan County, Taiwan, R.O.C.
Web-Site: www.transcominc.com.tw
Phone: 886-6-5050086
Fax: 886-6-5051602
P2/3
TC2997C
PRE3_20050418
EVALUATION BOARD
PCB Material: FR4
ER = 4.6
Thickness = 31 mil
Unit: mil
Part Type
Resistor
Reference Designator
R1
Description
12 ohm 0805
-
Manufacturer
Capacitor
Ci1
1.2 pF 0603
Murata
Capacitor
Ci2
0.75 pF 0603
Murata
Capacitor
Ci3
2.0 pF 0603
Murata
Capacitor
Ci4
1000 pF 0603
Murata
Capacitor
Capacitor
Ci5
Ci6
0.1 uF 0603
10 uF 1206
Murata
Murata
Capacitor
Co1
2.2 pF 0805
ATC
Capacitor
Co2
1.5 pF 0805
ATC
Capacitor
Co3
1000 pF 0603
Murata
TRANSCOM, INC., 90 Dasoong 7th Road, Tainan Science-Based Industrial Park, Shanhua Jen, Tainan County, Taiwan, R.O.C.
Web-Site: www.transcominc.com.tw
Phone: 886-6-5050086
Fax: 886-6-5051602
P3/3