SECOS 2SA1235A

2SA1235A
-0.2A , -60V
PNP Silicon Plastic Encapsulated Transistor
Elektronische Bauelemente
RoHS Compliant Product
A suffix of “-C” specifies halogen & lead-free
SOT-23
FEATURES
 Low Collector Current
 Low Collector Power Dissipation
A
L
3
3
C B
Top View
CLASSIFICATION OF hFE (1)
1
Product-Rank
2SA1235A-ME
2SA1235A-MF
Range
150~300
250~500
Marking
M‧E
M‧F
1
K
G
REF.
PACKAGE INFORMATION
MPQ
LeaderSize
SOT-23
3K
7’ inch
2
D
F
Package
2
E
A
B
C
D
E
F
Millimeter
Min.
Max.
2.80
3.00
2.25
2.55
1.20
1.40
0.90
1.15
1.80
2.00
0.30
0.50
H
REF.
G
H
J
K
L
J
Millimeter
Min.
Max.
0.10 REF.
0.55 REF.
0.08
0.15
0.5 REF.
0.95 TYP.
Collector


Base

Emitter
ABSOLUTE MAXIMUM RATINGS (TA = 25°C unless otherwise noted)
Symbol
Ratings
Unit
Collector to Base Voltage
Collector to Emitter Voltage
Emitter to Base Voltage
Collector Current - Continuous
Collector Power Dissipation
Parameter
VCBO
VCEO
VEBO
IC
PC
-60
-50
-6
-200
200
V
V
V
mA
mW
Thermal Resistance Junction to Ambient
RθJA
625
°C / W
TJ, TSTG
150, -55~150
°C
Junction and Storage Temperature
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Parameter
Symbol
Min.
Typ.
Max.
Unit
Collector to Base Breakdown Voltage
Collector to Emitter Breakdown
Emitter to Base Breakdown Voltage
Collector Cut-off Current
Emitter Cut-off Current
V(BR)CBO
V(BR)CEO
V(BR)EBO
ICBO
IEBO
-60
-50
-6
-
-
-100
-100
V
V
V
nA
nA
hFE (1)
150
-
500
hFE (2)
90
-
-
Collector to Emitter
Saturation Voltage
VCE(sat)
-
-
-0.3
Base to Emitter Saturation Voltage
VBE(sat)
-
-
-1
V
IC= -100mA, IB= -10mA
fT
Cob
-
200
4
-
MHz
pF
VCE= -6V, IC= -10mA
VCB= -6V, IE=0, f=1MHz
DC Current Gain
Transition Frequency
Collector Output Capacitance
http://www.SeCoSGmbH.com/
19-Jan-2011 Rev. A
Test Conditions
IC= -100A, IE=0
IC= -0.1mA, IB=0
IE= -100A, IC=0
VCB= -60V, IE=0
VEB= -6V, IC=0
VCE= -6V, IC= -1mA
VCE= -6V, IC= -0.1mA
V
IC= -100mA, IB= -10mA
Any changes of specification will not be informed individually.
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