BD180 Plastic Medium Power Silicon PNP Transistor This device is designed for use in 5.0 to 10 Watt audio amplifiers and drivers utilizing complementary or quasi complementary circuits. http://onsemi.com Features • DC Current Gain − hFE = 40 (Min) @ IC = 0.15 Adc • BD180 is complementary with BD179 • Pb−Free Package is Available* 3.0 AMPERES POWER TRANSISTORS PNP SILICON 80 VOLTS, 30 WATTS ÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎ MAXIMUM RATINGS Symbol Value Unit Collector−Emitter Voltage Rating VCEO 80 Vdc Collector−Base Voltage VCBO 80 Vdc Emitter−Base Voltage VEBO 5.0 Vdc Collector Current IC 1.0 Adc Base Current IB 2.0 Adc Total Power Dissipation @ TC = 25_C Derate above 25_C PD 30 240 W mW/_C TJ, Tstg –65 to +150 _C Operating and Storage Junction Temperature Range TO−225 CASE 77 STYLE 1 3 2 1 MARKING DIAGRAM THERMAL CHARACTERISTICS Characteristic Symbol Max Unit Thermal Resistance, Junction−to−Case qJC 4.16 _C/W Maximum ratings are those values beyond which device damage can occur. Maximum ratings applied to the device are individual stress limit values (not normal operating conditions) and are not valid simultaneously. If these limits are exceeded, device functional operation is not implied, damage may occur and reliability may be affected. YWW BD180G Y WW BD180 G = Year = Work Week = Device Code = Pb−Free Package ORDERING INFORMATION Device BD180 BD180G Package Shipping TO−225 500 Units/Box TO−225 (Pb−Free) 500 Units/Box *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. © Semiconductor Components Industries, LLC, 2006 February, 2006 − Rev. 11 1 Publication Order Number: BD180/D BD180 ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎ ELECTRICAL CHARACTERISTICS (TC = 25_C unless otherwise noted) Characteristic Collector−Emitter Sustaining Voltage (Note 1) (IC = 0.1 Adc, IB = 0) Collector Cutoff Current (VCB = 45 Vdc, IE = 0) (VCB = 80 Vdc, IE = 0) Symbol Min Max Unit V(BR)CEO 80 − Vdc − − − 1.0 − 1.0 40 15 250 − ICBO BD180 Emitter Cutoff Current (VBE = 5.0 Vdc, IC = 0) IEBO DC Current Gain (IC = 0.15 A, VCE = 2.0 V) (IC = 1.0 A, VCE = 2.0 V) hFE mAdc mAdc − Collector−Emitter Saturation Voltage (Note 1) (IC = 1.0 Adc, IB = 0.1 Adc) VCE(sat) − 0.8 Vdc Base−Emitter On Voltage (Note 1) (IC = 1.0 Adc, VCE = 2.0 Vdc) VBE(on) − 1.3 Vdc fT 3.0 − MHz Current−Gain − Bandwidth Product (IC = 250 mAdc, VCE = 10 Vdc, f = 1.0 MHz) 1. Pulse Test: Pulse Width 300 ms, Duty Cycle 10 7.0 5.0 2.0%. The Safe Operating Area Curves indicate IC − VCE limits below which the device will not enter secondary breakdown. Collector load lines for specific circuits must fall within the applicable Safe Area to avoid causing a catastrophic failure. To insure operation below the maximum TJ, power−temperature derating must be observed for both steady state and pulse power conditions. IC, COLLECTOR CURRENT (AMP) 100 ms 1.0 ms 3.0 5.0 ms 2.0 dc 1.0 0.7 0.5 TJ = 150°C 0.3 0.2 0.1 1.0 SECONDARY BREAKDOWN LIMITATION THERMAL LIMITATION (BASE-EMITTER DISSIPATION IS SIGNIFICANT ABOVE IC = 20 AMP) PULSE DUTY CYCLE < 10% BD180 2.0 3.0 5.0 7.0 10 20 30 50 VCE, COLLECTOR−EMITTER VOLTAGE (VOLTS) 70 100 Figure 1. Active Region Safe Operating Area VCE , COLLECTOR−EMITTER VOLTAGE (VOLTS) 1.0 TJ = 25°C 0.8 IC = 0.1 A 0.25 A 0.5 A 1.0 A 0.6 0.4 0.2 0 0.2 0.5 1.0 2.0 5.0 10 20 IB, BASE CURRENT (mA) Figure 2. Collector Saturation Region http://onsemi.com 2 50 100 200 BD180 1.5 VCE = 2.0 V 1.2 200 TJ = + 150°C 100 70 50 TJ = + 25°C VOLTAGE (VOLTS) 300 r(t), NORMALIZED EFFECTIVE TRANSIENT THERMAL RESISTANCE hFE , DC CURRENT GAIN (NORMALIZED) 1000 700 500 TJ = − 55°C 30 TJ = 25°C 0.9 VBE(sat) @ IC/IB = 10 0.6 VBE @ VCE = 2.0 V 0.3 20 10 2.0 3.0 5.0 10 1.0 0.7 0.5 D = 0.5 0.3 D = 0.2 0.2 D = 0.1 0.1 0.07 0.05 D = 0.05 20 30 50 100 0 2.0 3.0 5.0 200 300 500 1000 2000 10 20 30 50 100 200 300 500 1000 2000 IC, COLLECTOR CURRENT (mA) IC, COLLECTOR CURRENT (mA) Figure 3. Current Gain Figure 4. “On” Voltages SINGLE PULSE qJC(t) = r(t) qJC qJC = 4.16°C/W MAX qJC = 3.5°C/W TYP D = 0.01 P(pk) D CURVES APPLY FOR POWER PULSE TRAIN SHOWN READ TIME AT t1 TJ(pk) − TC = P(pk) qJC(t) 0.03 0.02 0.01 0.01 VCE(sat) @ IC/IB = 10 0.02 0.03 0.05 0.1 0.2 0.3 0.5 1.0 2.0 3.0 5.0 10 t, TIME or PULSE WIDTH (ms) Figure 5. Thermal Response http://onsemi.com 3 20 30 50 t1 t2 DUTY CYCLE, D = t1/t2 100 200 300 500 1000 BD180 PACKAGE DIMENSIONS TO−225 CASE 77−09 ISSUE Z −B− U F NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. 3. 077−01 THRU −08 OBSOLETE, NEW STANDARD 077−09. C Q M −A− 1 2 3 H K J V G R 0.25 (0.010) S M A M B M D 2 PL 0.25 (0.010) M A M B M DIM A B C D F G H J K M Q R S U V INCHES MIN MAX 0.425 0.435 0.295 0.305 0.095 0.105 0.020 0.026 0.115 0.130 0.094 BSC 0.050 0.095 0.015 0.025 0.575 0.655 5_ TYP 0.148 0.158 0.045 0.065 0.025 0.035 0.145 0.155 0.040 −−− MILLIMETERS MIN MAX 10.80 11.04 7.50 7.74 2.42 2.66 0.51 0.66 2.93 3.30 2.39 BSC 1.27 2.41 0.39 0.63 14.61 16.63 5 _ TYP 3.76 4.01 1.15 1.65 0.64 0.88 3.69 3.93 1.02 −−− STYLE 1: PIN 1. EMITTER 2. COLLECTOR 3. BASE ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). 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This literature is subject to all applicable copyright laws and is not for resale in any manner. PUBLICATION ORDERING INFORMATION LITERATURE FULFILLMENT: N. American Technical Support: 800−282−9855 Toll Free Literature Distribution Center for ON Semiconductor USA/Canada P.O. Box 61312, Phoenix, Arizona 85082−1312 USA Phone: 480−829−7710 or 800−344−3860 Toll Free USA/Canada Japan: ON Semiconductor, Japan Customer Focus Center 2−9−1 Kamimeguro, Meguro−ku, Tokyo, Japan 153−0051 Fax: 480−829−7709 or 800−344−3867 Toll Free USA/Canada Phone: 81−3−5773−3850 Email: [email protected] http://onsemi.com 4 ON Semiconductor Website: http://onsemi.com Order Literature: http://www.onsemi.com/litorder For additional information, please contact your local Sales Representative. BD180/D