BD179 Plastic Medium-Power NPN Silicon Transistor This device is designed for use in 5.0 to 10 Watt audio amplifiers and drivers utilizing complementary or quasi complementary circuits. Features http://onsemi.com •DC Current Gain - hFE = 40 (Min) @ IC = 0.15 Adc •BD179 is complementary with BD180 •Pb-Free Package is Available* 3.0 AMPERES POWER TRANSISTORS NPN SILICON 80 VOLTS, 30 WATTS MAXIMUM RATINGS Rating Symbol Value Unit Collector-Emitter Voltage VCEO 80 Vdc Collector-Base Voltage VCBO 80 Vdc Emitter-Base Voltage VEBO 5.0 Vdc IC 3.0 Adc Base Current IB 1.0 Adc Total Power Dissipation @ TC = 25_C Derate above 25_C PD 30 240 W mW/_C TJ, Tstg –65 to +150 _C Characteristic Symbol Max Unit Thermal Resistance, Junction-to-Case qJC 4.16 _C/W Collector Current Operating and Storage Junction Temperature Range TO-225 CASE 77 STYLE 1 3 2 1 THERMAL CHARACTERISTICS MARKING DIAGRAM Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. YWW BD179G Y WW BD179 G = Year = Work Week = Device Code = Pb-Free Package ORDERING INFORMATION Device BD179 BD179G Package Shipping TO-225 500 Units/Box TO-225 (Pb-Free) 500 Units/Box *For additional information on our Pb-Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. © Semiconductor Components Industries, LLC, 2007 July, 2007 - Rev. 12 1 Publication Order Number: BD179/D BD179 ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎ ELECTRICAL CHARACTERISTICS (TC = 25_C unless otherwise noted) Characteristic Symbol Min Max Unit V(BR)CEO 80 - Vdc Collector Cutoff Current (VCB = 80 Vdc, IE = 0) ICBO - 0.1 mAdc Emitter Cutoff Current (VBE = 5.0 Vdc, IC = 0) IEBO - 1.0 mAdc DC Current Gain (IC = 0.15 A, VCE = 2.0 V) (IC = 1.0 A, VCE = 2.0 V) hFE 63 15 160 - Collector-Emitter Sustaining Voltage (Note 1) (IC = 0.1 Adc, IB = 0) - Collector-Emitter Saturation Voltage (Note 1) (IC = 1.0 Adc, IB = 0.1 Adc) VCE(sat) - 0.8 Vdc Base-Emitter On Voltage (Note 1) (IC = 1.0 Adc, VCE = 2.0 Vdc) VBE(on) - 1.3 Vdc fT 3.0 - MHz Current-Gain - Bandwidth Product (IC = 250 mAdc, VCE = 10 Vdc, f = 1.0 MHz) 1. Pulse Test: Pulse Width x 300 As, Duty Cycle x 2.0%. 10 100 ms IC, COLLECTOR CURRENT (AMP) 7.0 5.0 3.0 2.0 1.0 ms 5.0 ms dc 1.0 0.7 0.5 TJ = 150°C 0.3 0.2 0.1 The Safe Operating Area Curves indicate IC - VCE limits below which the device will not enter secondary breakdown. Collector load lines for specific circuits must fall within the applicable Safe Area to avoid causing a catastrophic failure. To insure operation below the maximum TJ, power-temperature derating must be observed for both steady state and pulse power conditions. 1.0 SECONDARY BREAKDOWN LIMITATION THERMAL LIMITATION (BASE-EMITTER DISSIPATION IS SIGNIFICANT ABOVE IC = 2.0 AMP) PULSE DUTY CYCLE < 10% 2.0 3.0 5.0 7.0 10 20 30 50 70 100 VCE, COLLECTOR-EMITTER VOLTAGE (VOLTS) Figure 1. Active Region Safe Operating Area http://onsemi.com 2 VCE , COLLECTOR-EMITTER VOLTAGE (VOLTS) BD179 1.0 0.8 IC = 0.1 A 0.25 A 0.5 A 1.0 A 0.6 TJ = 25°C 0.4 0.2 0 0.2 0.3 0.5 1.0 2.0 3.0 5.0 10 IB, BASE CURRENT (mA) 20 30 50 100 200 1000 700 500 1.5 VCE = 2.0 V 1.2 300 200 100 70 50 TJ = + 150°C 30 20 TJ = + 55°C TJ = + 25°C r(t), NORMALIZED EFFECTIVE TRANSIENT THERMAL RESISTANCE 0.9 VBE(sat) @ IC/IB = 10 0.6 VBE @ VCE = 2.0 V 0.3 10 20 30 50 100 0 2.0 3.0 5.0 IC, COLLECTOR CURRENT (mA) 200 300 500 1000 2000 10 20 30 50 100 200 300 500 1000 2000 IC, COLLECTOR CURRENT (mA) Figure 3. Current Gain Figure 4. “On” Voltages D = 0.5 0.3 0.2 D = 0.2 0.1 0.07 0.05 D = 0.05 D = 0.1 SINGLE PULSE qJC(t) = r(t) qJC qJC = 4.16°C/W MAX qJC = 3.5°C/W TYP D = 0.01 P(pk) D CURVES APPLY FOR POWER PULSE TRAIN SHOWN READ TIME AT t1 TJ(pk) - TC = P(pk) qJC(t) 0.03 0.02 0.01 0.01 TJ = 25°C VCE(sat) @ IC/IB = 10 10 2.0 3.0 5.0 1.0 0.7 0.5 VOLTAGE (VOLTS) hFE, DC CURRENT GAIN (NORMALIZED) Figure 2. Collector Saturation Region 0.02 0.03 0.05 0.1 0.2 0.3 0.5 1.0 2.0 3.0 5.0 10 t, TIME or PULSE WIDTH (ms) Figure 5. Thermal Response http://onsemi.com 3 20 30 50 t1 t2 DUTY CYCLE, D = t1/t2 100 200 300 500 1000 BD179 PACKAGE DIMENSIONS TO-225 CASE 77-09 ISSUE Z -BU F NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. 3. 077-01 THRU -08 OBSOLETE, NEW STANDARD 077-09. C Q M -A1 2 3 H DIM A B C D F G H J K M Q R S U V K J V G R 0.25 (0.010) S M A M B M D 2 PL 0.25 (0.010) M A M B M INCHES MIN MAX 0.425 0.435 0.295 0.305 0.095 0.105 0.020 0.026 0.115 0.130 0.094 BSC 0.050 0.095 0.015 0.025 0.575 0.655 5_ TYP 0.148 0.158 0.045 0.065 0.025 0.035 0.145 0.155 0.040 --- MILLIMETERS MIN MAX 10.80 11.04 7.50 7.74 2.42 2.66 0.51 0.66 2.93 3.30 2.39 BSC 1.27 2.41 0.39 0.63 14.61 16.63 5 _ TYP 3.76 4.01 1.15 1.65 0.64 0.88 3.69 3.93 1.02 --- STYLE 1: PIN 1. EMITTER 2. COLLECTOR 3. 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