ONSEMI BD437G

BD435, BD437, BD439,
BD441
Plastic Medium Power
Silicon NPN Transistor
This series of plastic, medium−power silicon NPN transistors can be
used for amplifier and switching applications. Complementary types
are BD438 and BD442.
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4.0 AMPERES
POWER TRANSISTORS
NPN SILICON
Features
• Pb−Free Packages are Available*
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MAXIMUM RATINGS
Rating
Symbol
Value
Unit
BD435
BD437
BD439
BD441
VCEO
32
45
60
80
Vdc
BD435
BD437
BD439
BD441
VCBO
32
45
60
80
Vdc
VEBO
5.0
Vdc
Collector Current
IC
4.0
Adc
Base Current
IB
1.0
Adc
Total Device Dissipation @ TC = 25°C
Derate above 25°C
PD
36
288
W
W/°C
TJ, Tstg
– 55 to + 150
°C
Characteristic
Symbol
Max
Unit
Thermal Resistance, Junction−to−Case
qJC
3.5
°C/W
Collector−Emitter Voltage
Collector−Base Voltage
Emitter−Base Voltage
Operating and Storage Junction
Temperature Range
TO−225AA
CASE 77
STYLE 1
3 2
1
MARKING DIAGRAM
YWW
BD4xxG
BD4xx
Y
WW
G
THERMAL CHARACTERISTICS
Maximum ratings are those values beyond which device damage can occur.
Maximum ratings applied to the device are individual stress limit values (not
normal operating conditions) and are not valid simultaneously. If these limits are
exceeded, device functional operation is not implied, damage may occur and
reliability may be affected.
*For additional information on our Pb−Free strategy and soldering details, please
download the ON Semiconductor Soldering and Mounting Techniques
Reference Manual, SOLDERRM/D.
© Semiconductor Components Industries, LLC, 2005
October, 2005− Rev. 14
1
= Device Code
xx = 35, 37, 37T, 39, 41
= Year
= Work Week
= Pb−Free Package
ORDERING INFORMATION
Device
Package
Shipping
BD435
TO−225AA
500 Units/Box
BD435G
TO−225AA
(Pb−Free)
500 Units/Box
BD437
TO−225AA
500 Units/Box
BD437G
TO−225AA
(Pb−Free)
500 Units/Box
BD437T
TO−225AA
50 Units/Rail
BD437TG
TO−225AA
(Pb−Free)
50 Units/Rail
BD439
TO−225AA
500 Units/Box
BD439G
TO−225AA
(Pb−Free)
500 Units/Box
BD441
TO−225AA
500 Units/Box
BD441G
TO−225AA
(Pb−Free)
500 Units/Box
Publication Order Number:
BD437/D
BD435, BD437, BD439, BD441
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ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted)
Symbol
Min
Typ
Max
Unit
Collector−Emitter Breakdown Voltage
(IC = 100 mA, IB = 0)
Characteristic
BD435
BD437
BD439
BD441
V(BR)CEO
32
45
60
80
−
−
−
−
−
−
−
−
Vdc
Collector−Base Breakdown Voltage
(IC = 100 mA, IB = 0)
BD435
BD437
BD439
BD441
V(BR)CBO
32
45
60
80
−
−
−
−
−
−
−
Vdc
V(BR)EBO
5.0
−
−
Vdc
−
−
−
−
−
−
−
−
0.1
0.1
0.1
0.1
IEBO
−
−
1.0
mAdc
BD435
BD437
BD439
BD441
hFE
40
30
20
15
−
−
−
−
−
−
−
−
−
BD435
BD437
BD439, BD441
hFE
85
85
40
−
−
−
475
375
475
−
BD435
BD437
BD439
BD441
hFE
50
40
25
15
−
−
−
−
−
−
−
−
−
−
−
−
−
0.5
0.8
VBE(on)
−
−
1.1
Vdc
fT
3.0
−
−
MHz
Emitter−Base Breakdown Voltage
(IE = 100 mA, IC = 0)
Collector Cutoff Current
(VCB = 32 V, IE = 0)
(VCB = 45 V, IE = 0)
(VCB = 60 V, IE = 0)
(VCB = 80 V, IE = 0)
ICBO
BD435
BD437
BD439
BD441
Emitter Cutoff Current
(VEB = 5.0 V)
DC Current Gain
(IC = 10 mA, VCE = 5.0 V)
DC Current Gain
(IC = 500 mA, VCE = 1.0 V)
DC Current Gain
(IC = 2.0 A, VCE = 1.0 V)
Collector Saturation Voltage
(IC = 2.0 A, IB = 0.2 V)
(IC = 3.0 A, IB = 0.3 A)
mAdc
VCE(sat)
BD435
BD437, BD439, BD441
Base−Emitter On Voltage
(IC = 2.0 A, VCE = 1.0 V)
Current−Gain − Bandwidth Product
(VCE = 1.0 V, IC = 250 mA, f = 1.0 MHz)
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2
Vdc
VCE, COLLECTOR−EMITTER VOLTAGE (VOLTS)
BD435, BD437, BD439, BD441
2.0
1.6
IC = 10 A
100 mA
1.0 A
3.0 A
1.2
0.8
TJ = 25°C
0.4
0
0.05 0.070.1
0.2
0.3
0.5 0.7 1.0
2.0 3.0
5.0 7.0 10
IB, BASE CURRENT (mA)
30
20
50 70 100
200 300
500
hFE, CURRENT GAIN (NORMALIZED)
Figure 1. Collector Saturation Region
200
180
160
140
120
BD433, 435, 437
BD439, 441
100
80
60
40
20
0
0.01
0.02
0.03
0.1
0.2
0.3
0.5
IC, COLLECTOR CURRENT (AMP)
0.05
1
2
3
5
Figure 2. Current Gain
IC, COLLECTOR CURRENT (AMP)
2.0
TJ = 25°C
VOLTAGE (VOLTS)
1.6
1.2
0.8
VBE(sat) @ IC/IB = 10
VBE @ VCE = 2.0 V
0.6
VCE(sat) @ IC/IB = 10
0
0.005 0.01 0.02 0.030.05 0.1 0.2 0.3 0.5 1.0 2.0 3.0 4.0
IC, COLLECTOR CURRENT (AMP)
10
5 ms
4.0
TJ = 150°C
dc
SECONDARY BREAKDOWN
THERMAL LIMIT TC = 25°C
BONDING WIRE LIMIT
1.0
0.5
CURVES APPLY BELOW RATED VCEO
BD437
BD439
BD441
0.1
1.0
Figure 3. “On” Voltage
2.0
5.0
10
20
50
100
VCE, COLLECTOR−EMITTER VOLTAGE (VOLTS)
Figure 4. Active Region Safe Operating Area
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3
BD435, BD437, BD439, BD441
PACKAGE DIMENSIONS
TO−225AA
CASE 77−09
ISSUE Z
−B−
U
F
Q
−A−
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
3. 077−01 THRU −08 OBSOLETE, NEW STANDARD
077−09.
C
M
1 2 3
H
DIM
A
B
C
D
F
G
H
J
K
M
Q
R
S
U
V
K
J
V
G
S
R
0.25 (0.010)
A
M
M
B
M
D 2 PL
0.25 (0.010)
M
A
M
B
M
INCHES
MIN
MAX
0.425
0.435
0.295
0.305
0.095
0.105
0.020
0.026
0.115
0.130
0.094 BSC
0.050
0.095
0.015
0.025
0.575
0.655
5_ TYP
0.148
0.158
0.045
0.065
0.025
0.035
0.145
0.155
0.040
−−−
MILLIMETERS
MIN
MAX
10.80
11.04
7.50
7.74
2.42
2.66
0.51
0.66
2.93
3.30
2.39 BSC
1.27
2.41
0.39
0.63
14.61
16.63
5 _ TYP
3.76
4.01
1.15
1.65
0.64
0.88
3.69
3.93
1.02
−−−
STYLE 1:
PIN 1. EMITTER
2. COLLECTOR
3. BASE
ON Semiconductor and
are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice
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4
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For additional information, please contact your
local Sales Representative.
BD437/D