isc Product Specification INCHANGE Semiconductor isc Silicon NPN Power Transistors BUS21B/C DESCRIPTION ·High Switching Speed ·Collector-Emitter Sustaining Voltage: VCEO(SUS)= 400V (Min)-BUS21B 450V (Min)-BUS21C APPLICATIONS ·Designed for use in converters, inverters, switching regulators, motor control systems etc. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL VCES VCEO VEBO PARAMETER Collector- Emitter Voltage(VBE= 0) Collector-Emitter Voltage MAX BUS21B 750 BUS21C 850 BUS21B 400 BUS21C 450 UNIT V V Emitter-Base Voltage 9 V IC Collector Current-Continuous 5 A ICM Collector Current-Peak 10 A IB Base Current 2 A IBM Base Current-Peak 4 A PC Collector Power Dissipation @TC=25℃ 100 W Tj Junction Temperature 200 ℃ -65~200 ℃ B Tstg Storage Temperature Range THERMAL CHARACTERISTICS SYMBOL PARAMETER MAX UNIT Rth j-c Thermal Resistance, Junction to Case 1.75 ℃/W isc Website：www.iscsemi.cn isc Product Specification INCHANGE Semiconductor isc Silicon NPN Power Transistors BUS21B/C ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS BUS21B VCEO(SUS) Collector-Emitter Sustaining Voltage VBE(sat) TYP. MAX IC= 0.1A ; IB= 0; L= 25mH V 450 BUS21B IC= 3A; IB= 0.4A 1.5 BUS21C IC= 3A; IB= 0.5A 1.5 BUS21B IC= 3A; IB= 0.4A 1.5 Collector-Emitter Saturation Voltage UNIT 400 BUS21C VCE(sat) MIN B V Base-Emitter Saturation Voltage B B V BUS21C IC= 3A; IB= 0.5A 1.5 B ICES Collector Cutoff Current VCE=VCESMmax; VBE= 0 1 mA IEBO Emitter Cutoff Current VEB= 9V; IC= 0 10 mA hFE-1 DC Current Gain IC= 0.5A ; VCE= 10V hFE-2 DC Current Gain BUS21B 25 7.5 IC= 3A ; VCE= 1.5V BUS21C isc Website：www.iscsemi.cn 6