SPMR600-01 Solid State Devices, Inc. SPACE LEVEL SHUNT MODULE 14701 Firestone Blvd * La Mirada, Ca 90638 Phone: (562) 404-4474 * Fax: (562) 404-1773 [email protected] * www.ssdi-power.com Designer’s Data Sheet Part Number/Ordering Information SPMR600 -01 1/ __ └ Screening 2/ __ = Not Screened TX = TX Level TXV = TXV S = S Level 150V Schottky section: FEATURES: • • • • • • Space Level Power Supply Applications Compact and Rugged Construction Offering Weight and Space Savings Very Low Mechanical Stress and Thermal Resistance Hermetic Sealed Discrete Elements Excellent Thermal Management TX, TXV, and Space Level Screening Available Maximum Ratings Symbol Value Units Peak Surge Reverse Voltage VRSM 150 V Peak Repetitive Reverse Voltage VRRM 150 V IO ID2 40 A Average Rectified Forward Current (Resistive Load, 60 Hz Sine Wave, TA = 25 °C) Non-repetitive Peak Surge Current (8.3 ms Pulse, Half Sine Wave) @ TC = 25°C IFSM 600 A Max. Avalanche repetitive reverse current @ 1.5 x VRRM IAR 0.6 A @ IAS= 6A L= 0.1 mH EAS 0.6 mJ @ TC = 25ºC PD TBD W TOP & TSTG -55 to+175 °C Non-repetitive Avalanche Energy Total Power Dissipation Operating & Storage Temperature 150V Schottky section: Electrical Characteristics Instantaneous Forward Voltage Drop (Pulsed, TA = 25 ºC) Instantaneous Forward Voltage Drop (Pulsed, TA = 125 ºC) Instantaneous Forward Voltage Drop (Pulsed, TA = -55 ºC) Reverse Leakage Current (Pulsed, TA = 25 ºC) Reverse Leakage Current (Pulsed, TA = 125 ºC) Reverse Leakage Current (Pulsed, TA = 150 ºC) Junction Capacitance (TA = 25ºC, f = 1MHz) Symbol Min Typ Max IF = 10Adc IF = 20Adc IF = 40Adc IF = 10Adc IF = 20Adc IF = 40Adc IF = 10Adc IF = 20Adc IF = 40Adc VF1 VF2 VF3 VF4 VF5 VF6 VF7 VF8 VF9 0.650 0.715 0.775 0.500 0.560 0.640 0.800 0.840 0.925 0.75 0.80 0.85 0.64 0.68 0.75 0.90 0.96 1.03 VR = 150 V IR1 –– –– –– –– –– –– –– –– –– –– 10 500 μA VR = 150 V IR2 5 50 mA VR = 150 V IR3 10 –– mA VR = 10V CJ 1000 1250 pF –– –– –– Units V V V Notes: 1/ For ordering information, price, and availability- Contact factory. 2/ Screening based on MIL-PRF-19500. Screening flows available on request. NOTE: All specifications are subject to change without notification. SCD's for these devices should be reviewed by SSDI prior to release. DATA SHEET #: PM0025A DOC SPMR600-01 Solid State Devices, Inc. 14701 Firestone Blvd * La Mirada, Ca 90638 Phone: (562) 404-4474 * Fax: (562) 404-1773 [email protected] * www.ssdi-power.com 250V MOSFET section: Maximum Ratings Symbol Value Units VDSS 250 V continuous transient VGS ±20 ±30 V Max. Continuous Drain Current (package limited) @ TC = 25ºC @ TC = 125ºC ID1 ID2 85 70 A Pulsed Drain (Instantaneous) Current (Tj limited) @ TC = 25ºC ID3 110 A Max. Avalanche current @ L= 0.1 mH IAR 25 A Single / Repetitive Avalanche Energy @ L= 0.1 mH EAS 1000 mJ Total Power Dissipation @ TC = 25ºC Drain - Source Voltage Gate – Source Voltage Operating & Storage Temperature 250V MOSFET section: Electrical Characteristics 4/ Drain to Source Breakdown Voltage Drain to Source On State Resistance VGS = 0V, ID = 250μA PD 250 W TOP & TSTG -55 to +150 ºC Symbol Min Typ Max Units BVDSS 250 –– –– V RDS(on) –– –– 24 45 28 –– mΩ VGS(th) 2.5 –– –– 3.0 4.2 1.5 4.5 –– –– V IGSS –– –– 10 30 ±200 –– nA IDSS –– –– 0.01 10 5 250 μA μA o VGS = 10V, ID = 55A, Tj= 25 C o VGS = 10V, ID = 55A, Tj=125 C o Gate Threshold Voltage VDS = VGS, ID = 1 mA, Tj= 25 C o VDS = VGS, ID = 1 mA, Tj= -55 C o VDS = VGS, ID = 1 mA, Tj= 125 C o VGS = ±20V, Tj= 25 C o VGS = ±20V, Tj= 125 C Gate to Source Leakage o Zero Gate Voltage Drain Current Forward Transconductance VDS = 250V, VGS = 0V, Tj = 25 C o VDS = 250V, VGS = 0V, Tj = 125 C o VDS = 10V, ID = 55A, Tj = 25 C gfs 50 100 –– Mho VGS = 10V VDS = 125V ID = 25A Qg Qgs Qgd –– –– –– 160 40 50 –– –– –– nC VGS = 15V VDS = 125V ID = 55A RG = 2.0Ω, pw= 3us td(on) tr td(off) tf –– –– –– –– 20 30 60 30 –– –– –– –– nsec IF = 55A, VGS = 0V VSD –– 0.9 1.2 V trr IRM(rec) Qrr –– –– –– 175 27 2.5 –– –– –– nsec A μC Ciss Coss Crss –– –– –– 9400 850 60 –– –– –– pF Total Gate Charge Gate to Source Charge Gate to Drain Charge Turn on Delay Time Rise Time Turn off Delay Time Fall Time Diode Forward Voltage Diode Reverse Recovery Time Peak Reverse Recovery Current Reverse Recovery Charge IF = 55A, di/dt = 250A/usec Input Capacitance Output Capacitance Reverse Transfer Capacitance NOTE: All specifications are subject to change without notification. SCD's for these devices should be reviewed by SSDI prior to release. VGS = 0V VDS = 25V f = 1 MHz DATA SHEET #: PM0025A DOC Solid State Devices, Inc. SPMR600-01 14701 Firestone Blvd * La Mirada, Ca 90638 Phone: (562) 404-4474 * Fax: (562) 404-1773 [email protected] * www.ssdi-power.com CASE OUTLINE: ASPM NOTE: All specifications are subject to change without notification. SCD's for these devices should be reviewed by SSDI prior to release. DATA SHEET #: PM0025A DOC