SSDI SPMR600-01

SPMR600-01
Solid State Devices, Inc.
SPACE LEVEL
SHUNT MODULE
14701 Firestone Blvd * La Mirada, Ca 90638
Phone: (562) 404-4474 * Fax: (562) 404-1773
[email protected] * www.ssdi-power.com
Designer’s Data Sheet
Part Number/Ordering Information
SPMR600 -01
1/
__
└ Screening
2/
__ = Not Screened
TX = TX Level
TXV = TXV
S = S Level
150V Schottky section:
FEATURES:
•
•
•
•
•
•
Space Level Power Supply Applications
Compact and Rugged Construction Offering Weight
and Space Savings
Very Low Mechanical Stress and Thermal
Resistance
Hermetic Sealed Discrete Elements
Excellent Thermal Management
TX, TXV, and Space Level Screening Available
Maximum Ratings
Symbol
Value
Units
Peak Surge Reverse Voltage
VRSM
150
V
Peak Repetitive Reverse Voltage
VRRM
150
V
IO
ID2
40
A
Average Rectified Forward Current
(Resistive Load, 60 Hz Sine Wave, TA = 25 °C)
Non-repetitive Peak Surge Current
(8.3 ms Pulse, Half Sine Wave)
@ TC = 25°C
IFSM
600
A
Max. Avalanche repetitive reverse current
@ 1.5 x VRRM
IAR
0.6
A
@ IAS= 6A
L= 0.1 mH
EAS
0.6
mJ
@ TC = 25ºC
PD
TBD
W
TOP & TSTG
-55 to+175
°C
Non-repetitive Avalanche Energy
Total Power Dissipation
Operating & Storage Temperature
150V Schottky section: Electrical Characteristics
Instantaneous Forward Voltage Drop
(Pulsed, TA = 25 ºC)
Instantaneous Forward Voltage Drop
(Pulsed, TA = 125 ºC)
Instantaneous Forward Voltage Drop
(Pulsed, TA = -55 ºC)
Reverse Leakage Current
(Pulsed, TA = 25 ºC)
Reverse Leakage Current
(Pulsed, TA = 125 ºC)
Reverse Leakage Current
(Pulsed, TA = 150 ºC)
Junction Capacitance
(TA = 25ºC, f = 1MHz)
Symbol
Min
Typ
Max
IF = 10Adc
IF = 20Adc
IF = 40Adc
IF = 10Adc
IF = 20Adc
IF = 40Adc
IF = 10Adc
IF = 20Adc
IF = 40Adc
VF1
VF2
VF3
VF4
VF5
VF6
VF7
VF8
VF9
0.650
0.715
0.775
0.500
0.560
0.640
0.800
0.840
0.925
0.75
0.80
0.85
0.64
0.68
0.75
0.90
0.96
1.03
VR = 150 V
IR1
––
––
––
––
––
––
––
––
––
––
10
500
μA
VR = 150 V
IR2
5
50
mA
VR = 150 V
IR3
10
––
mA
VR = 10V
CJ
1000
1250
pF
––
––
––
Units
V
V
V
Notes: 1/ For ordering information, price, and availability- Contact factory.
2/ Screening based on MIL-PRF-19500. Screening flows available on request.
NOTE: All specifications are subject to change without notification.
SCD's for these devices should be reviewed by SSDI prior to release.
DATA SHEET #: PM0025A
DOC
SPMR600-01
Solid State Devices, Inc.
14701 Firestone Blvd * La Mirada, Ca 90638
Phone: (562) 404-4474 * Fax: (562) 404-1773
[email protected] * www.ssdi-power.com
250V MOSFET section:
Maximum Ratings
Symbol
Value
Units
VDSS
250
V
continuous
transient
VGS
±20
±30
V
Max. Continuous Drain Current (package limited)
@ TC = 25ºC
@ TC = 125ºC
ID1
ID2
85
70
A
Pulsed Drain (Instantaneous) Current (Tj limited)
@ TC = 25ºC
ID3
110
A
Max. Avalanche current
@ L= 0.1 mH
IAR
25
A
Single / Repetitive Avalanche Energy
@ L= 0.1 mH
EAS
1000
mJ
Total Power Dissipation
@ TC = 25ºC
Drain - Source Voltage
Gate – Source Voltage
Operating & Storage Temperature
250V MOSFET section: Electrical Characteristics 4/
Drain to Source Breakdown Voltage
Drain to Source On State Resistance
VGS = 0V, ID = 250μA
PD
250
W
TOP & TSTG
-55 to +150
ºC
Symbol
Min
Typ
Max
Units
BVDSS
250
––
––
V
RDS(on)
––
––
24
45
28
––
mΩ
VGS(th)
2.5
––
––
3.0
4.2
1.5
4.5
––
––
V
IGSS
––
––
10
30
±200
––
nA
IDSS
––
––
0.01
10
5
250
μA
μA
o
VGS = 10V, ID = 55A, Tj= 25 C
o
VGS = 10V, ID = 55A, Tj=125 C
o
Gate Threshold Voltage
VDS = VGS, ID = 1 mA, Tj= 25 C
o
VDS = VGS, ID = 1 mA, Tj= -55 C
o
VDS = VGS, ID = 1 mA, Tj= 125 C
o
VGS = ±20V, Tj= 25 C
o
VGS = ±20V, Tj= 125 C
Gate to Source Leakage
o
Zero Gate Voltage Drain Current
Forward Transconductance
VDS = 250V, VGS = 0V, Tj = 25 C
o
VDS = 250V, VGS = 0V, Tj = 125 C
o
VDS = 10V, ID = 55A, Tj = 25 C
gfs
50
100
––
Mho
VGS = 10V
VDS = 125V
ID = 25A
Qg
Qgs
Qgd
––
––
––
160
40
50
––
––
––
nC
VGS = 15V
VDS = 125V
ID = 55A
RG = 2.0Ω, pw= 3us
td(on)
tr
td(off)
tf
––
––
––
––
20
30
60
30
––
––
––
––
nsec
IF = 55A, VGS = 0V
VSD
––
0.9
1.2
V
trr
IRM(rec)
Qrr
––
––
––
175
27
2.5
––
––
––
nsec
A
μC
Ciss
Coss
Crss
––
––
––
9400
850
60
––
––
––
pF
Total Gate Charge
Gate to Source Charge
Gate to Drain Charge
Turn on Delay Time
Rise Time
Turn off Delay Time
Fall Time
Diode Forward Voltage
Diode Reverse Recovery Time
Peak Reverse Recovery Current
Reverse Recovery Charge
IF = 55A, di/dt = 250A/usec
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
NOTE: All specifications are subject to change without notification.
SCD's for these devices should be reviewed by SSDI prior to release.
VGS = 0V
VDS = 25V
f = 1 MHz
DATA SHEET #: PM0025A
DOC
Solid State Devices, Inc.
SPMR600-01
14701 Firestone Blvd * La Mirada, Ca 90638
Phone: (562) 404-4474 * Fax: (562) 404-1773
[email protected] * www.ssdi-power.com
CASE OUTLINE: ASPM
NOTE: All specifications are subject to change without notification.
SCD's for these devices should be reviewed by SSDI prior to release.
DATA SHEET #: PM0025A
DOC