SFF44N50M SFF44N50Z Solid State Devices, Inc. 14701 Firestone Blvd * La Mirada, Ca 90638 Phone: (562) 404-4474 * Fax: (562) 404-1773 [email protected] * www.ssdi-power.com DESIGNER’S DATA SHEET TO-254 25 AMP , 500 Volts, 110 mΩ Avalanche Rated N-channel MOSFET TO-254Z Features: • • • • • • • • Note 1: maximum current limited by package configuration Rugged poly-Si gate Lowest ON-resistance in the industry Avalanche rated Hermetically Sealed, Isolated Package Low Total Gate Charge Fast Switching TX, TXV, S-Level screening available Improved (RDS(ON) QG) figure of merit Maximum Ratings Symbol Value Units VDSS 500 V continuous transient VGS ±20 ±30 V @ TC = 25ºC @ TC = 125ºC ID1 ID2 25 12 A Max. Instantaneous Drain Current (Tj limited) @ TC = 25ºC ID3 35 A Max. Avalanche current @ L= 0.1 mH IAR 20 A Single / Repetitive Avalanche Energy @ L= 0.1 mH EAS / EAR 1100 / 1 mJ Total Power Dissipation @ TC = 25ºC PD 125 W TOP & TSTG -55 to +150 ºC Rjc 1.0 (typ.0.75) ºC /W Drain - Source Voltage Gate – Source Voltage Max. Continuous Drain Current (package limited) Operating & Storage Temperature Maximum Thermal Resistance (Junction to Case) TO254 (M) NOTE: All specifications are subject to change without notification. SCD's for these devices should be reviewed by SSDI prior to release. TO254Z (Z) DATA SHEET #: FT0030A DOC SFF44N50M SFF44N50Z Solid State Devices, Inc. 14701 Firestone Blvd * La Mirada, Ca 90638 Phone: (562) 404-4474 * Fax: (562) 404-1773 [email protected] * www.ssdi-power.com Electrical Characteristics 4/ Symbol Min Typ Max VGS = 0V, ID = 250μA BVDSS 500 530 –– V VGS = 10V, ID = 20A, Tj= 25oC VGS = 10V, ID = 12A, Tj=125oC VGS = 10V, ID = 20A, Tj= 150oC RDS(on) –– –– –– 100 230 270 110 –– –– mΩ VGS(th) 2.1 –– –– –– 3.0 2.7 3.2 1.9 3.9 –– –– –– V VGS = ±20V, Tj= 25oC VGS = ±20V, Tj= 125oC IGSS –– –– 10 30 ±100 –– nA VDS = 500V, VGS = 0V, Tj = 25oC VDS = 500V, VGS = 0V, Tj = 125oC VDS = 500V, VGS = 0V, Tj = 150oC IDSS –– –– –– 0.01 2.0 10 25 –– 250 μA μA μA VDS = 10V, ID = 20A, Tj = 25oC gfs 10 30 –– Mho VGS = 10V VDS = 380V ID = 32A Qg Qgs Qgd –– –– –– 175 28 80 –– –– –– nC VGS = 10V VDS = 380V ID = 32A RG = 2.7Ω, pw= 3us td(on) tr td(off) tf –– –– –– –– 30 10 70 10 –– –– –– –– nsec IF = 32A, VGS = 0V VSD –– 1.0 1.5 V trr IRM(rec) Qrr –– –– –– 540 45 12 –– –– –– nsec A μC Ciss Coss Crss –– –– –– 4500 540 100 –– –– –– pF Drain to Source Breakdown Voltage Drain to Source On State Resistance Gate Threshold Voltage VDS = VGS, ID = 1.8mA, Tj= 25oC VDS = VGS, ID = 250μA, Tj= 25oC VDS = VGS, ID = 250μA, Tj= -55oC VDS = VGS, ID = 250μA, Tj= 125oC Gate to Source Leakage Zero Gate Voltage Drain Current Forward Transconductance Total Gate Charge Gate to Source Charge Gate to Drain Charge Turn on Delay Time Rise Time Turn off Delay Time Fall Time Diode Forward Voltage Diode Reverse Recovery Time Peak Reverse Recovery Current Reverse Recovery Charge Input Capacitance Output Capacitance Reverse Transfer Capacitance IF = 32A, di/dt = 100A/usec VGS = 0V VDS = 25V f = 1 MHz Units NOTES: * Pulse Test: Pulse Width = 300µsec, Duty Cycle = 2%. 1/ For Ordering Information, Price, and Availability Contact Factory. 2/ Screening per MIL-PRF-19500. 3/ For Package Outlines / lead bending options / pinout configurations Contact Factory. 4/ Unless Otherwise Specified, All Electrical Characteristics @25oC. Available Part Numbers: Consult Factory NOTE: All specifications are subject to change without notification. SCD's for these devices should be reviewed by SSDI prior to release. PIN ASSIGNMENT (Standard) Package Drain Source Gate Pin 1 Pin 2 Pin 3 TO-254 (M) Pin 1 Pin 2 Pin 3 TO-254Z (Z) DATA SHEET #: FT0030A DOC