SSDI SFF100N20

SFF100N20/3T
Solid State Devices, Inc.
14701 Firestone Blvd * La Mirada, Ca 90638
Phone: (562) 404-4474 * Fax: (562) 404-1773
[email protected] * www.ssdi-power.com
100 AMP , 200 Volts, 25 mΩ
Avalanche Rated N-channel
MOSFET
DESIGNER’S DATA SHEET
Part Number / Ordering Information 1/
SFF100N20 ___ ___ ___
│
│
│
│
│
│
│
│
└
│
│
│
│
│
└
└
Screening 2/
__ = Not Screened
TX = TX Level
TXV = TXV Level
S = S Level
Features:




Lead Option
__ = Straight Leads
Package
4/
/3T= TO-3 (Pin Diameter : 0.058”-0.063”)




Rugged poly-Si gate
Lowest ON-resistance in the industry
Avalanche rated
Hermetically Sealed, Power Package with high pin
current carrying capability
Low Total Gate Charge
Fast Switching
TX, TXV, S-Level screening available
Improved (RDS(ON) QG) figure of merit
Maximum Ratings5/
Symbol
Value
Units
VDSS
200
V
continuous
transient
VGS
±20
±30
V
@ TC = 25ºC
ID1
55
A
@ TC = 25ºC
@ TC = 125ºC
ID2
ID3
100
40
A
Max. Avalanche current
@ L= 0.1 mH
IAR
60
A
Single and Repetitive Avalanche Energy
@ L= 0.1 mH
EAS
EAR
1500
50
mJ
Total Power Dissipation
@ TC = 25ºC
PD
300
W
TOP & TSTG
-55 to +175
ºC
RθJC
0.5 (typ.0.3)
ºC/W
Drain - Source Voltage
Gate – Source Voltage
Max. Continuous Drain Current (package
limited)
Max. Instantaneous Drain Current (Tj limited)
Operating & Storage Temperature
Maximum Thermal Resistance
(Junction to Case)
NOTES:
TO-3
*Pulse Test: Pulse Width = 300µsec, Duty Cycle = 2%.
1/ For ordering information, price, and availability - contact factory.
2/ Screening based on MIL-PRF-19500. Screening flows available on request.
4/ Maximum current limited by package configuration
5/ Unless otherwise specified, all electrical characteristics @25oC.
NOTE: All specifications are subject to change without notification.
SCD's for these devices should be reviewed by SSDI prior to release.
DATA SHEET #: FT0044A
DOC
SFF100N20/3T
Solid State Devices, Inc.
14701 Firestone Blvd * La Mirada, Ca 90638
Phone: (562) 404-4474 * Fax: (562) 404-1773
[email protected] * www.ssdi-power.com
Electrical Characteristics5/
Symbol
Min
Typ
Max
Units
BVDSS
200
220
––
V
VGS = 10V, ID = 48A, Tj= 25 C
VGS = 10V, ID = 48A, Tj=125oC
VGS = 10V, ID = 48A, Tj= 175oC
RDS(on)
––
––
––
25
50
65
30
65
––
mΩ
VDS = VGS, ID = 4.0mA, Tj= 25oC
VDS = VGS, ID = 4.0mA, Tj= 125oC
VDS = VGS, ID = 4.0mA, Tj= -55oC
VGS(th)
2.5
1.5
––
4.5
3.6
5
5.0
––
6
V
VGS = ±20V, Tj= 25oC
VGS = ±20V, Tj= 125oC
IGSS
––
––
10
30
±100
––
nA
VDS = 200V, VGS = 0V, Tj = 25oC
VDS = 200V, VGS = 0V, Tj = 125oC
VDS = 200V, VGS = 0V, Tj = 150oC
IDSS
––
––
––
0.01
2.5
25
25
150
––
μA
μA
μA
VDS = 10V, ID = 48A, Tj = 25oC
gfs
25
50
––
Mho
VGS = 10V
VDS = 100V
ID = 48A
Qg
Qgs
Qgd
––
––
––
150
45
75
250
65
120
nC
VGS = 10V
VDS = 100V
ID = 48A
RG = 4.0Ω, pw= 3us
td(on)
tr
td(off)
tf
––
––
––
––
50
50
110
50
75
75
135
75
nsec
IF = 48A, VGS = 0V
VSD
––
0.90
1.5
V
Diode Reverse Recovery Time
Reverse Recovery Charge
IF = 10A, di/dt = 100A/usec
IF = 10A, di/dt = 100A/usec
IF = 10A, di/dt = 100A/usec
IF = 25A, di/dt = 100A/usec
IF = 25A, di/dt = 100A/usec
IF = 25A, di/dt = 100A/usec
trr1
Irm1
Qrr1
trr2
Irm2
Qrr2
––
––
––
––
––
––
190
11
1
310
17
2.5
250
––
––
––
––
––
nsec
A
μC
nsec
A
μC
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
VGS = 0V
VDS = 25V
f = 1 MHz
Ciss
Coss
Crss
––
––
––
5300
1050
175
––
––
––
pF
Drain to Source Breakdown Voltage
Drain to Source On State
Resistance
Gate Threshold Voltage
Gate to Source Leakage
Zero Gate Voltage Drain Current
Forward Transconductance
VGS = 0V, ID = 250μA
o
Total Gate Charge
Gate to Source Charge
Gate to Drain Charge
Turn on Delay Time
Rise Time
Turn off Delay Time
Fall Time
Diode Forward Voltage
Package Outline: TO-3
Pin Out:
Pin 1: GATE
Pin 2: SOURCE
Pin 3: DRAIN
Note 1:
P/N: SFF80N20/3T:
Pin Diameter: 0.063”
0.058”
Note 2:
This dimension shall be measured at points
.050 - .055” below the seating plane. When
gage is not used, measurement will be made
at seating plane. This outline does not meet
the minimum criteria established by JS-10 for
registration.
NOTE: All specifications are subject to change without notification.
SCD's for these devices should be reviewed by SSDI prior to release.
DATA SHEET #: FT0044A
DOC