SFF250M SFF250Z Solid State Devices, Inc. 14701 Firestone Blvd * La Mirada, Ca 90638 Phone: (562) 404-4474 * Fax: (562) 404-1773 [email protected] * www.ssdi-power.com DESIGNER’S DATA SHEET 30 AMP / 200 Volts 0.060 Ω typical N-Channel POWER MOSFET Part Number / Ordering Information 1/ SFF250 __ __ __ │ │ │ │ │ │ │ │ │ └ │ └ Screening 2/ __ = Not Screen │ TX = TX Level │ TXV = TXV Level │ S = S Level │ └ Lead Option 3/ __ = Straight Leads Features: • • • • • • • • • • • DB = Down Bend UB = Up Bend Package 3/ M = TO-254 Z = TO-254Z Rugged Construction with Polysilicon Gate Cell Low RDS(ON) and High Transconductance Excellent High Temperature Stability Very Fast Switching Speed Fast Recovery and Superior dV/dt Performance Increased Reverse Energy Capability Low Input and Transfer Capacitance for Easy Paralleling Ceramic Seals Available for Improved Hermeticity Hermetically Sealed Surface Mount Power Package TX, TXV, Space Level Screening Available Replacement for IRFM250 Types Maximum Ratings Symbol Value Units Drain – Source Voltage VDS 200 Volts Gate – Source Voltage VGS ±20 Volts ID 30 Amps Top & Tstg -55 to +150 ºC RθJC 1 ºC/W PD 125 95 W Continuous Collector Current Operating & Storage Temperature Maximum Thermal Resistance Junction to Case Total Device Dissipation TC = 25ºC TC = 55ºC TO-254 (M) TO-254Z (Z) For Pin Out Configuration and Optional Lead Bend, See Page 3. NOTE: All specifications are subject to change without notification. SCD's for these devices should be reviewed by SSDI prior to release. DATA SHEET #: F00049E DOC SFF250M SFF250Z Solid State Devices, Inc. 14701 Firestone Blvd * La Mirada, Ca 90638 Phone: (562) 404-4474 * Fax: (562) 404-1773 [email protected] * www.ssdi-power.com Electrical Characteristics @ T J = 25ºC (Unless Otherwise Specified) Symbol Min Typ Max Units BVDSS 200 –– –– V RDS(on) –– 0.06 0.085 Ω VGS(th) 2 3 5 V gfs 10 17 –– mho IDSS –– –– –– –– 25 250 μA At rated VGS IGSS –– –– –– –– +100 -100 nA Total Gate Charge Gate to Source Charge Gate to Drain Charge VGS=10 V VDS= 100 V ID= 30 A Qg Qgs Qgd –– –– –– 70 18 35 120 25 65 nC Turn on Delay Time Rise Time Turn on Delay Time Fall Time Diode Forward Voltage (IS= 30 A, VGS= 0 V, TJ= 25ºC) VDD= 100 V ID= 15 A RG= 6.2Ω td(on) tr td(off) tf –– –– –– –– 29 35 75 35 30 180 100 120 nsec VSD –– –– 1.1 1.5 V trr QRR –– –– 150 2.0 630 8 nsec μC Ciss Coss Crss –– –– –– 4200 650 120 –– –– –– pF Drain to Source Breakdown Voltage (VGS= 0 V, ID= 250μA Drain to Source On State Resistance (VGS= 10 V, ID= 18 A Gate Threshold Voltage (VDS= VGS, ID= 250μA Forward Transconductance (VDS≥ IN(on) X RDS(on) Max, ID= 18 A Zero Gate Voltage Drain Current (VDS= 200 V, VGS= 0 V) (VDS= 200 V, VGS= 0 V, TA= 125ºC) Gate to Source Leakage Forward Gate to Source Leakage Reverse Diode Reverse Recovery Time Reverse Recovery Charge Input Capacitance Input Capacitance Reverse Transfer Capacitance TJ= 25ºC IF= 10 A di/dt= 100 A/μsec VGS= 0 Volts VDS= 25 Volts f= 1 MHz For thermal derating curves and other characteristics please contact SSDI Marketing Department. Available Part Numbers: SFF250M; SFF250MDB; SFF250MUB; SFF250Z; SFF250ZDB; SFF250ZUB; NOTE: All specifications are subject to change without notification. SCD's for these devices should be reviewed by SSDI prior to release. PIN ASSIGNMENT (Standard) Package TO-254 (M) TO-254Z (Z) Drain Pin 1 Pin 1 DATA SHEET #: F00049E Source Pin 2 Pin 2 Gate Pin 3 Pin 3 DOC SFF250M SFF250Z Solid State Devices, Inc. 14701 Firestone Blvd * La Mirada, Ca 90638 Phone: (562) 404-4474 * Fax: (562) 404-1773 [email protected] * www.ssdi-power.com Case Outline: TO-254 (M) .150 Ø.139 .685 .665 .750 .500 2x .155 .145 PIN 3 .545 .535 PIN 2 PIN 1 3x Ø.045 .035 .545 .535 .270 .240 .050 .040 .155 .140 .800 .790 SUFFIX: MDB SUFFIX: MUB Case Outline: TO-254Z (Z) PIN 3 PIN 2 PIN 1 SUFFIX: ZDB NOTE: All specifications are subject to change without notification. SCD's for these devices should be reviewed by SSDI prior to release. SUFFIX: ZUB DATA SHEET #: F00049E DOC