SFF23N60S1 SFF23N60S2 Solid State Devices, Inc. 14701 Firestone Blvd * La Mirada, Ca 90638 Phone: (562) 404-4474 * Fax: (562) 404-1773 [email protected] * www.ssdi-power.com DESIGNER’S DATA SHEET 21 AMP, 600 Volts, 320 mΩ Avalanche Rated N-channel MOSFET SMD1, 2 Features: • • • • • • • • Note 1/ maximum current limited by package configuration Rugged poly-Si gate Lowest ON-resistance in the industry Avalanche rated Hermetically Sealed, Hot Case power SMD Low Total Gate Charge Fast Switching TX, TXV, S-Level screening available Improved (RDS(ON) QG) figure of merit Maximum Ratings Symbol Value Units VDSS 600 V continuous transient VGS ±30 ±40 V Max. Continuous Drain Current (package limited) @ TC = 25ºC @ TC = 125ºC ID1 ID2 21 10 A Pulsed Drain (Instantaneous) Current (Tj limited) @ TC = 25ºC ID3 30 A Max. Avalanche current @ L= 0.1 mH IAR 30 A Single / Repetitive Avalanche Energy @ L= 0.1 mH EAS / EAR 1500 / 30 mJ Total Power Dissipation @ TC = 25ºC PD 300 W TOP & TSTG -55 to +150 ºC R0JC 0.42 (typ 0.3) ºC/W Drain - Source Voltage Gate – Source Voltage Operating & Storage Temperature Maximum Thermal Resistance SMD 1 NOTE: All specifications are subject to change without notification. SCD's for these devices should be reviewed by SSDI prior to release. Junction to Case SMD 2 DATA SHEET #: FT0029B DOC SFF23N60S1 SFF23N60S2 Solid State Devices, Inc. 14701 Firestone Blvd * La Mirada, Ca 90638 Phone: (562) 404-4474 * Fax: (562) 404-1773 [email protected] * www.ssdi-power.com Electrical Characteristics 4/ Symbol Min Typ Max Units VGS = 0V, ID = 250μA BVDSS 600 620 –– V VGS = 10V, ID = 11.5A, Tj= 25oC VGS = 10V, ID = 25A, Tj=25oC VGS =10V, ID = 11.5A, Tj= 125oC RDS(on) –– –– –– 300 300 670 320 –– –– mΩ VDS = VGS, ID = 4mA, Tj= 25oC VDS = VGS, ID = 1mA, Tj= 25oC VGS(th) 2.0 –– 3.5 3.4 4.5 –– V IGSS –– –– 20 30 ±100 –– nA IDSS –– –– 0.1 0.085 25 1 μA mA VDS = 10V, ID = 11.5A, Tj = 25oC gfs 10 20 –– Mho VGS = 10V VDS = 300V ID = 16.5A Qg Q gs Q gd –– –– –– 100 23 45 –– –– –– nC VGS = 10V VDS = 300V ID = 16.5A RG = 2.0Ω, pw= 3us IF = 23A, VGS = 0V IF = 16.5A, VGS = 0V td(on) tr td(off) tf –– –– –– –– 28 33 80 23 –– –– –– –– nsec –– –– –– –– –– –– –– –– 1.0 0.87 1.5 –– V 210 tbd 1.3 4100 400 120 250 –– –– –– –– –– Drain to Source Breakdown Voltage Drain to Source On State Resistance Gate Threshold Voltage Gate to Source Leakage Zero Gate Voltage Drain Current Forward Transconductance VGS = ±30V, Tj= 25oC VGS = ±20V, Tj= 125oC VDS = 600V, VGS = 0V, Tj = 25oC VDS = 480V, VGS = 0V, Tj = 125oC Total Gate Charge Gate to Source Charge Gate to Drain Charge Turn on Delay Time Rise Time Turn off Delay Time Fall Time Diode Forward Voltage Diode Reverse Recovery Time Peak Reverse Recovery Current Reverse Recovery Charge Input Capacitance Output Capacitance Reverse Transfer Capacitance IF = 16.5A, di/dt = 100A/usec VGS = 0V VDS = 25V f = 1 MHz VSD trr IRM(rec) Qrr Ciss Coss Crss nsec A μC pF NOTES: * Pulse Test: Pulse Width = 300µsec, Duty Cycle = 2%. 1/ For Ordering Information, Price, and Availability Contact Factory. 2/ Screening per MIL-PRF-19500. 3/ For Package Outlines Contact Factory. 4/ Unless Otherwise Specified, All Electrical Characteristics @25oC. Available Part Numbers: Consult Factory NOTE: All specifications are subject to change without notification. SCD's for these devices should be reviewed by SSDI prior to release. PIN ASSIGNMENT (Standard) Package Drain Source Gate Pin 1 Pin 2 Pin 3 SMD1 Pin 1 Pin 2 Pin 3 SMD2 DATA SHEET #: FT0029B DOC