PANJIT SB3060LCT

SB3060LCT
DUAL HIGH-VOLTAGE SCHOTTKY RECTIFIER
VOLTAGE
60 Volts
CURRENT
30 Ampers
FEATURES
• Low forward voltage drop, low power losses
• High efficiency operation
• In compliance with EU RoHS 2002/95/EC directives
MECHANICAL DATA
Case : TO-220AB, Plastic
Terminals : Solderable per MIL-STD-750, Method 2026
Weight: 0.0655 ounces, 1.859 grams
MAXIMUM RATINGS(TA=25oC unless otherwise noted)
PARAMETER
Maximum repetitive peak reverse voltage
SYMBOL
VALUE
UNIT
VRRM
60
V
Maximum average forward rectified current (Fig.1)
per device
per diode
I F(AV)
30
15
A
Peak forward surge current 8.3ms single half sine-wave
superimposed on rated load per diode
per diode
I FSM
250
A
EAS
450
mJ
R JC
2 .5
TJ,TSTG
-55 to + 150
Non-repetitive avalanche energy at TJ=25oC,L=60mH per diode
Typ i c a l The r ma l Re s i s ta nc e
per diode
Operating junction and storage temperature range
O
C /W
o
C
ELECTRICAL CHARACTERISTICS(TA=25oC unless otherwise noted)
PARAMETER
Breakdown voltage
SYMBOL
V BR
Instantaneous forward voltage per
diode (1)
VF
Reverse current per diode (1)
IR
TEST CONDITIONS
I R=1mA
MIN.
TYP.
MAX.
UNIT
60
-
-
V
I F=15A
I F=30A
TA=25oC
-
-
0.60
0.75
V
I F=15A
I F=30A
TA=125oC
-
0.48
0.64
0.56
0.70
V
VR=60V
TA=25oC
TA=125oC
-
-
480
150
A
mA
Note.1 Pulse test : tp=380s, <2%
PAN JIT RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN, FUNCTIONS AND RELIABILITY WITHOUT NOTICE
REV.1.2-AUG.6.2009
PAGE . 1
SB3060LCT
RATINGS AND CHARACTERISTICS CURVES (TA=25oC unless otherwise noted)
Average Forward Current (A)
35
10000
Junction Capacitance (pF)
Resistive or Inductive Load
30
25
20
15
10
5
0
0
25
50
75
100
125
T J =25 oC
f=1.0MHz
Vsig=50mVp-p
1000
100
10
0.1
150
1
o
Case Temperature ( C)
100
Reverse Voltage (V)
Figure 1. Forward Current
Derating Curve
Figure 2. Typical Junction
Capacitance
1000
1000
o
T A =100 C
Instantaneous Reverse
Current (mA)
Instantaneous Forward
Current (A)
10
o
100
T A =125 C
10
T A =75 oC
1
T A =25 oC
0.1
0
REV.1.2-AUG.6.2009
0.2
0.4
0.6
0.8
1.0
1.2
1.4
100
o
T A =100 C
10
1
T A =25 oC
0.1
0.01
10 20
30 40 50 60 70 80 90 100
Instantaneous Forward Voltage (V)
Percent of Rated Peak Reverse Voltage (%)
Figure 3. Typical Instantaneous
Forward Characteristics Per Diode
Figure 4. Typical Reverse
Characteristics Per Diode
PAGE . 2