VISHAY VESD03A1C-HD1

VESD03A1C-HD1
Vishay Semiconductors
ESD-Protection Diode in LLP1006-2L
Features
•
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•
•
•
•
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Ultra compact LLP1006-2L package
Low package height < 0.4 mm
1-line ESD-protection
Low leakage current < 1 µA
Low load capacitance CD = 46 pF
(VR = 2.5 V; f = 1 MHz)
ESD-protection acc. IEC 61000-4-2
± 30 kV contact discharge
± 30 kV air discharge
High surge current acc. IEC61000-4-5 IPP > 9.5 A
Soldering can be checked by standard vision
inspection. No X-ray necessary
Lead (Pb)-free component
Pin plating NiPdAu (e4) no whisker growth
Component in accordance to RoHS 2002/95/EC
and WEEE 2002/96/EC
1
2
20856
20855
Marking (example only)
Bar = Cathode marking
X = Date code
Y = Type code (see table below)
XY
21121
Ordering Information
Ordering code
Taped units per reel
(8 mm tape on 7" reel)
Minimum order quantity
VESD03A1C-HD1-GS08
8000
8000
Device name
VESD03A1C-HD1
Package Data
Device name
Package
name
Type
code
Weight
Molding compound
flammability rating
Moisture sensitivity level
Soldering conditions
VESD03A1C-HD1
LLP1006-2L
E
0.72 mg
UL 94 V-0
MSL level 1
(according J-STD-020)
260 °C/10 s at terminals
Absolute Maximum Ratings
Test conditions
Symbol
Value
Peak pulse current
Rating
Acc. IEC 61000-4-5, tP = 8/20 µs/single shot
IPPM
9.5
A
Peak pulse power
Acc. IEC 61000-4-5, tP = 8/20 µs/single shot
PPP
95
W
Contact discharge acc. IEC 61000-4-2; 10 pulses
VESD
± 30
kV
Air discharge acc. IEC 61000-4-2; 10 pulses
VESD
± 30
kV
Junction temperature
TJ
- 40 to + 125
°C
TSTG
- 55 to + 150
°C
ESD immunity
Operating temperature
Storage temperature
Unit
* Please see document “Vishay Green and Halogen-Free Definitions (5-2008)” http://www.vishay.com/doc?99902
Document Number 81797
Rev. 1.2, 02-Sep-08
For technical support, please contact: [email protected]
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1
VESD03A1C-HD1
Vishay Semiconductors
BiAs-Mode (Bidirectional Asymmetrical protection mode)
With the VESD03A1C-HD1 one signal- or data-lines (L1) can be protected against voltage transients. With
pin 1 connected to ground and pin 2 connected to a signal- or data-line which has to be protected. As long as
the voltage level on the data- or signal-line is between 0 V (ground level) and the specified Maximum Reverse
Working Voltage (VRWM) the protection diode between data line and ground offers a high isolation to the ground
line. The protection device behaves like an open switch.
As soon as any positive transient voltage signal exceeds the break through voltage level of the protection
diode, the diode becomes conductive and shorts the transient current to ground. Now the protection device
behaves like a closed switch. The Clamping Voltage (VC) is defined by the BReakthrough Voltage (VBR) level
plus the voltage drop at the series impedance (resistance and inductance) of the protection device.
Any negative transient signal will be clamped accordingly. The negative transient current is flowing in the
forward direction of the protection diode. The low Forward Voltage (VF) clamps the negative transient close to
the ground level.
Due to the different clamping levels in forward and reverse direction the VESD03A1C-HD1 clamping behaviour
is Bidirectional and Asymmetrical (BiAs).
1
2
L1
20925
Electrical Characteristics
Ratings at 25 °C, ambient temperature, unless otherwise specified
VESD03A1C-HD1
BiAs mode (between pin 1 and pin 2)
Parameter
Test conditions/remarks
Symbol
Number of lines which can be protected
Nlines
Reverse stand off voltage
at IR = 0.5 µA
VRWM
Reverse current
at VR = 3.3 V
IR
Reverse break down voltage
at IR = 1 mA
VBR
at IPP = 1 A
Protection paths
Min.
Typ.
Max.
Unit
1
lines
3.3
V
0.06
1
µA
6
6.6
V
VC
6.4
7.5
V
at IPP = IPPM = 9.5 A
VC
8.5
10
V
at IPP = 0.2 A
VF
0.9
1.2
V
at IPP = 1 A
VF
1.1
V
at IPP = IPPM = 9.5 A
VF
2.5
V
at VR = 0 V; f = 1 MHz
CD
78
at VR = 2.5 V; f = 1 MHz
CD
46
5
Reverse clamping voltage
Forward clamping voltage
90
pF
Capacitance
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2
For technical support, please contact: [email protected]
pF
Document Number 81797
Rev. 1.2, 02-Sep-08
VESD03A1C-HD1
Vishay Semiconductors
Typical Characteristics
Tamb = 25 °C, unless otherwise specified
100
8 µs to 100 %
100 %
10
80 %
1
IF (mA)
IPPM
60 %
20 µs to 50 %
40 %
0.1
0.01
20 %
0%
0
10
20548
20
30
40
Time (µs)
0.001
0.5
Figure 1. 8/20 µs Peak Pulse Current Wave Form
acc. IEC 61000-4-5
0.7
0.8
0.9
VF (V)
Figure 4. Typical Forward Current IF vs.
Forward Voltage VF
7
120 %
Rise time = 0.7 ns to 1 ns
6
100 %
5
80 %
VR (V)
Discharge Current IESD
0.6
20697
60 %
53 %
40 %
4
3
2
27 %
20 %
1
0
0%
- 10 0 10 20 30 40 50 60 70 80 90 100
Time (ns)
20557
0.01
0.1
1
20698
Figure 2. ESD Discharge Current Wave Form
acc. IEC 61000-4-2 (330 Ω/150 pF)
10
100
1000 10000
IR (µA)
Figure 5. Typical Reverse Voltage VR vs.
Reverse Current IR
10
90
f = 1 MHz
80
positive surge
8
70
6
VC (V)
CD (pF)
60
50
40
4 Measured
acc. IEC 61000-4-5
2 (8/20 µs - wave form)
30
VC
0
20
-2
10
negative surge
0
-4
0
0.5
20969
1
1.5
2
2.5
3
3.5
VR (V)
Figure 3. Typical Capacitance CD vs.
Reverse Voltage VR
Document Number 81797
Rev. 1.2, 02-Sep-08
0
1
2
3
4
20699
5
6
7
8
9 10 11
IPP (A)
Figure 6. Typical Peak Clamping Voltage VC vs.
Peak Pulse Current IPP
For technical support, please contact: [email protected]
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3
VESD03A1C-HD1
Vishay Semiconductors
60
acc. IEC 61000-4-2
+ 8 kV
contact discharge
50
40
VC-ESD (V)
30
20
10
0
- 10
- 20
- 30
- 40
- 10 0
10 20 30 40 50 60 70 80 90
t (ns)
20700
Figure 7. Typical Clamping Performance at + 8 kV
Contact Discharge (acc. IEC 61000-4-2)
40
acc. IEC 61000-4-2
- 8 kV
contact discharge
30
VC-ESD (V)
20
10
0
- 10
- 20
- 30
- 40
- 50
- 10 0
10 20 30 40 50 60 70 80 90
t (ns)
20701
Figure 8. Typical Clamping Performance at - 8 kV
Contact Discharge (acc. IEC 61000-4-2)
200
acc. IEC 61000-4-2
contact discharge
150
VC-ESD (V)
100 positive discharge
50
VC-ESD
0
- 50
- 100 negative discharge
- 150
- 200
0
20702
5
10
15
20
25
30
35
VESD (kV)
Figure 9. Typical Peak Clamping Voltage at ESD
Contact Discharge (acc. IEC 61000-4-2)
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For technical support, please contact: [email protected]
Document Number 81797
Rev. 1.2, 02-Sep-08
VESD03A1C-HD1
Vishay Semiconductors
Package Dimensions in millimeters (inches): LLP1006-2L
0.25 [0.010]
0.45 [0.018]
0.65 [0.026]
0.35 [0.014]
0.125 [0.005] ref.
Orientation identification
0 [0.000]
0.05 [0.002]
0.4 [0.016]
0.55 [0.022]
0.33 [0.013]
0.55 [0.022]
0.45 [0.018]
0.2 [0.008]
0.15 [0.006]
0.3 [0.012]
1.05 [0.041]
0.95 [0.037]
20812
Document Number 81797
Rev. 1.2, 02-Sep-08
solder
resist mask
solder pad
0.05 [0.002]
Document no.:S8-V-3906.04-005 (4)
Created - Date: 13.July.2007
Rev. 4 - Date: 28.Aug.2008
1 [0.039]
0.2 [0.008]
0.6 [0.024]
0.5 [0.020]
foot print recommendation:
0.5 [0.020]
0.25 [0.010]
soldermask opening +/-0,03
measured middle of the package
For technical support, please contact: [email protected]
www.vishay.com
5
VESD03A1C-HD1
Vishay Semiconductors
Ozone Depleting Substances Policy Statement
It is the policy of Vishay Semiconductor GmbH to
1. Meet all present and future national and international statutory requirements.
2. Regularly and continuously improve the performance of our products, processes, distribution and operating
systems with respect to their impact on the health and safety of our employees and the public, as well as
their impact on the environment.
It is particular concern to control or eliminate releases of those substances into the atmosphere which are
known as ozone depleting substances (ODSs).
The Montreal Protocol (1987) and its London Amendments (1990) intend to severely restrict the use of ODSs
and forbid their use within the next ten years. Various national and international initiatives are pressing for an
earlier ban on these substances.
Vishay Semiconductor GmbH has been able to use its policy of continuous improvements to eliminate the use
of ODSs listed in the following documents.
1. Annex A, B and list of transitional substances of the Montreal Protocol and the London Amendments
respectively.
2. Class I and II ozone depleting substances in the Clean Air Act Amendments of 1990 by the Environmental
Protection Agency (EPA) in the USA.
3. Council Decision 88/540/EEC and 91/690/EEC Annex A, B and C (transitional substances) respectively.
Vishay Semiconductor GmbH can certify that our semiconductors are not manufactured with ozone depleting
substances and do not contain such substances.
We reserve the right to make changes to improve technical design
and may do so without further notice.
Parameters can vary in different applications. All operating parameters must be validated for each customer
application by the customer. Should the buyer use Vishay Semiconductors products for any unintended or
unauthorized application, the buyer shall indemnify Vishay Semiconductors against all claims, costs, damages,
and expenses, arising out of, directly or indirectly, any claim of personal damage, injury or death associated
with such unintended or unauthorized use.
Vishay Semiconductor GmbH, P.O.B. 3535, D-74025 Heilbronn, Germany
www.vishay.com
6
For technical support, please contact: [email protected]
Document Number 81797
Rev. 1.2, 02-Sep-08
Legal Disclaimer Notice
www.vishay.com
Vishay
Disclaimer
ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE
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Vishay Intertechnology, Inc. hereby certifies that all its products that are identified as RoHS-Compliant fulfill the
definitions and restrictions defined under Directive 2011/65/EU of The European Parliament and of the Council
of June 8, 2011 on the restriction of the use of certain hazardous substances in electrical and electronic equipment
(EEE) - recast, unless otherwise specified as non-compliant.
Please note that some Vishay documentation may still make reference to RoHS Directive 2002/95/EC. We confirm that
all the products identified as being compliant to Directive 2002/95/EC conform to Directive 2011/65/EU.
Revision: 12-Mar-12
1
Document Number: 91000