VESD03A1C-HD1 Vishay Semiconductors ESD-Protection Diode in LLP1006-2L Features • • • • • • • • • • • Ultra compact LLP1006-2L package Low package height < 0.4 mm 1-line ESD-protection Low leakage current < 1 µA Low load capacitance CD = 46 pF (VR = 2.5 V; f = 1 MHz) ESD-protection acc. IEC 61000-4-2 ± 30 kV contact discharge ± 30 kV air discharge High surge current acc. IEC61000-4-5 IPP > 9.5 A Soldering can be checked by standard vision inspection. No X-ray necessary Lead (Pb)-free component Pin plating NiPdAu (e4) no whisker growth Component in accordance to RoHS 2002/95/EC and WEEE 2002/96/EC 1 2 20856 20855 Marking (example only) Bar = Cathode marking X = Date code Y = Type code (see table below) XY 21121 Ordering Information Ordering code Taped units per reel (8 mm tape on 7" reel) Minimum order quantity VESD03A1C-HD1-GS08 8000 8000 Device name VESD03A1C-HD1 Package Data Device name Package name Type code Weight Molding compound flammability rating Moisture sensitivity level Soldering conditions VESD03A1C-HD1 LLP1006-2L E 0.72 mg UL 94 V-0 MSL level 1 (according J-STD-020) 260 °C/10 s at terminals Absolute Maximum Ratings Test conditions Symbol Value Peak pulse current Rating Acc. IEC 61000-4-5, tP = 8/20 µs/single shot IPPM 9.5 A Peak pulse power Acc. IEC 61000-4-5, tP = 8/20 µs/single shot PPP 95 W Contact discharge acc. IEC 61000-4-2; 10 pulses VESD ± 30 kV Air discharge acc. IEC 61000-4-2; 10 pulses VESD ± 30 kV Junction temperature TJ - 40 to + 125 °C TSTG - 55 to + 150 °C ESD immunity Operating temperature Storage temperature Unit * Please see document “Vishay Green and Halogen-Free Definitions (5-2008)” http://www.vishay.com/doc?99902 Document Number 81797 Rev. 1.2, 02-Sep-08 For technical support, please contact: [email protected] www.vishay.com 1 VESD03A1C-HD1 Vishay Semiconductors BiAs-Mode (Bidirectional Asymmetrical protection mode) With the VESD03A1C-HD1 one signal- or data-lines (L1) can be protected against voltage transients. With pin 1 connected to ground and pin 2 connected to a signal- or data-line which has to be protected. As long as the voltage level on the data- or signal-line is between 0 V (ground level) and the specified Maximum Reverse Working Voltage (VRWM) the protection diode between data line and ground offers a high isolation to the ground line. The protection device behaves like an open switch. As soon as any positive transient voltage signal exceeds the break through voltage level of the protection diode, the diode becomes conductive and shorts the transient current to ground. Now the protection device behaves like a closed switch. The Clamping Voltage (VC) is defined by the BReakthrough Voltage (VBR) level plus the voltage drop at the series impedance (resistance and inductance) of the protection device. Any negative transient signal will be clamped accordingly. The negative transient current is flowing in the forward direction of the protection diode. The low Forward Voltage (VF) clamps the negative transient close to the ground level. Due to the different clamping levels in forward and reverse direction the VESD03A1C-HD1 clamping behaviour is Bidirectional and Asymmetrical (BiAs). 1 2 L1 20925 Electrical Characteristics Ratings at 25 °C, ambient temperature, unless otherwise specified VESD03A1C-HD1 BiAs mode (between pin 1 and pin 2) Parameter Test conditions/remarks Symbol Number of lines which can be protected Nlines Reverse stand off voltage at IR = 0.5 µA VRWM Reverse current at VR = 3.3 V IR Reverse break down voltage at IR = 1 mA VBR at IPP = 1 A Protection paths Min. Typ. Max. Unit 1 lines 3.3 V 0.06 1 µA 6 6.6 V VC 6.4 7.5 V at IPP = IPPM = 9.5 A VC 8.5 10 V at IPP = 0.2 A VF 0.9 1.2 V at IPP = 1 A VF 1.1 V at IPP = IPPM = 9.5 A VF 2.5 V at VR = 0 V; f = 1 MHz CD 78 at VR = 2.5 V; f = 1 MHz CD 46 5 Reverse clamping voltage Forward clamping voltage 90 pF Capacitance www.vishay.com 2 For technical support, please contact: [email protected] pF Document Number 81797 Rev. 1.2, 02-Sep-08 VESD03A1C-HD1 Vishay Semiconductors Typical Characteristics Tamb = 25 °C, unless otherwise specified 100 8 µs to 100 % 100 % 10 80 % 1 IF (mA) IPPM 60 % 20 µs to 50 % 40 % 0.1 0.01 20 % 0% 0 10 20548 20 30 40 Time (µs) 0.001 0.5 Figure 1. 8/20 µs Peak Pulse Current Wave Form acc. IEC 61000-4-5 0.7 0.8 0.9 VF (V) Figure 4. Typical Forward Current IF vs. Forward Voltage VF 7 120 % Rise time = 0.7 ns to 1 ns 6 100 % 5 80 % VR (V) Discharge Current IESD 0.6 20697 60 % 53 % 40 % 4 3 2 27 % 20 % 1 0 0% - 10 0 10 20 30 40 50 60 70 80 90 100 Time (ns) 20557 0.01 0.1 1 20698 Figure 2. ESD Discharge Current Wave Form acc. IEC 61000-4-2 (330 Ω/150 pF) 10 100 1000 10000 IR (µA) Figure 5. Typical Reverse Voltage VR vs. Reverse Current IR 10 90 f = 1 MHz 80 positive surge 8 70 6 VC (V) CD (pF) 60 50 40 4 Measured acc. IEC 61000-4-5 2 (8/20 µs - wave form) 30 VC 0 20 -2 10 negative surge 0 -4 0 0.5 20969 1 1.5 2 2.5 3 3.5 VR (V) Figure 3. Typical Capacitance CD vs. Reverse Voltage VR Document Number 81797 Rev. 1.2, 02-Sep-08 0 1 2 3 4 20699 5 6 7 8 9 10 11 IPP (A) Figure 6. Typical Peak Clamping Voltage VC vs. Peak Pulse Current IPP For technical support, please contact: [email protected] www.vishay.com 3 VESD03A1C-HD1 Vishay Semiconductors 60 acc. IEC 61000-4-2 + 8 kV contact discharge 50 40 VC-ESD (V) 30 20 10 0 - 10 - 20 - 30 - 40 - 10 0 10 20 30 40 50 60 70 80 90 t (ns) 20700 Figure 7. Typical Clamping Performance at + 8 kV Contact Discharge (acc. IEC 61000-4-2) 40 acc. IEC 61000-4-2 - 8 kV contact discharge 30 VC-ESD (V) 20 10 0 - 10 - 20 - 30 - 40 - 50 - 10 0 10 20 30 40 50 60 70 80 90 t (ns) 20701 Figure 8. Typical Clamping Performance at - 8 kV Contact Discharge (acc. IEC 61000-4-2) 200 acc. IEC 61000-4-2 contact discharge 150 VC-ESD (V) 100 positive discharge 50 VC-ESD 0 - 50 - 100 negative discharge - 150 - 200 0 20702 5 10 15 20 25 30 35 VESD (kV) Figure 9. Typical Peak Clamping Voltage at ESD Contact Discharge (acc. IEC 61000-4-2) www.vishay.com 4 For technical support, please contact: [email protected] Document Number 81797 Rev. 1.2, 02-Sep-08 VESD03A1C-HD1 Vishay Semiconductors Package Dimensions in millimeters (inches): LLP1006-2L 0.25 [0.010] 0.45 [0.018] 0.65 [0.026] 0.35 [0.014] 0.125 [0.005] ref. Orientation identification 0 [0.000] 0.05 [0.002] 0.4 [0.016] 0.55 [0.022] 0.33 [0.013] 0.55 [0.022] 0.45 [0.018] 0.2 [0.008] 0.15 [0.006] 0.3 [0.012] 1.05 [0.041] 0.95 [0.037] 20812 Document Number 81797 Rev. 1.2, 02-Sep-08 solder resist mask solder pad 0.05 [0.002] Document no.:S8-V-3906.04-005 (4) Created - Date: 13.July.2007 Rev. 4 - Date: 28.Aug.2008 1 [0.039] 0.2 [0.008] 0.6 [0.024] 0.5 [0.020] foot print recommendation: 0.5 [0.020] 0.25 [0.010] soldermask opening +/-0,03 measured middle of the package For technical support, please contact: [email protected] www.vishay.com 5 VESD03A1C-HD1 Vishay Semiconductors Ozone Depleting Substances Policy Statement It is the policy of Vishay Semiconductor GmbH to 1. Meet all present and future national and international statutory requirements. 2. Regularly and continuously improve the performance of our products, processes, distribution and operating systems with respect to their impact on the health and safety of our employees and the public, as well as their impact on the environment. It is particular concern to control or eliminate releases of those substances into the atmosphere which are known as ozone depleting substances (ODSs). The Montreal Protocol (1987) and its London Amendments (1990) intend to severely restrict the use of ODSs and forbid their use within the next ten years. Various national and international initiatives are pressing for an earlier ban on these substances. Vishay Semiconductor GmbH has been able to use its policy of continuous improvements to eliminate the use of ODSs listed in the following documents. 1. Annex A, B and list of transitional substances of the Montreal Protocol and the London Amendments respectively. 2. Class I and II ozone depleting substances in the Clean Air Act Amendments of 1990 by the Environmental Protection Agency (EPA) in the USA. 3. Council Decision 88/540/EEC and 91/690/EEC Annex A, B and C (transitional substances) respectively. Vishay Semiconductor GmbH can certify that our semiconductors are not manufactured with ozone depleting substances and do not contain such substances. We reserve the right to make changes to improve technical design and may do so without further notice. Parameters can vary in different applications. All operating parameters must be validated for each customer application by the customer. Should the buyer use Vishay Semiconductors products for any unintended or unauthorized application, the buyer shall indemnify Vishay Semiconductors against all claims, costs, damages, and expenses, arising out of, directly or indirectly, any claim of personal damage, injury or death associated with such unintended or unauthorized use. Vishay Semiconductor GmbH, P.O.B. 3535, D-74025 Heilbronn, Germany www.vishay.com 6 For technical support, please contact: [email protected] Document Number 81797 Rev. 1.2, 02-Sep-08 Legal Disclaimer Notice www.vishay.com Vishay Disclaimer ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE. Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other disclosure relating to any product. Vishay makes no warranty, representation or guarantee regarding the suitability of the products for any particular purpose or the continuing production of any product. To the maximum extent permitted by applicable law, Vishay disclaims (i) any and all liability arising out of the application or use of any product, (ii) any and all liability, including without limitation special, consequential or incidental damages, and (iii) any and all implied warranties, including warranties of fitness for particular purpose, non-infringement and merchantability. Statements regarding the suitability of products for certain types of applications are based on Vishay’s knowledge of typical requirements that are often placed on Vishay products in generic applications. Such statements are not binding statements about the suitability of products for a particular application. It is the customer’s responsibility to validate that a particular product with the properties described in the product specification is suitable for use in a particular application. Parameters provided in datasheets and/or specifications may vary in different applications and performance may vary over time. All operating parameters, including typical parameters, must be validated for each customer application by the customer’s technical experts. Product specifications do not expand or otherwise modify Vishay’s terms and conditions of purchase, including but not limited to the warranty expressed therein. Except as expressly indicated in writing, Vishay products are not designed for use in medical, life-saving, or life-sustaining applications or for any other application in which the failure of the Vishay product could result in personal injury or death. Customers using or selling Vishay products not expressly indicated for use in such applications do so at their own risk and agree to fully indemnify and hold Vishay and its distributors harmless from and against any and all claims, liabilities, expenses and damages arising or resulting in connection with such use or sale, including attorneys fees, even if such claim alleges that Vishay or its distributor was negligent regarding the design or manufacture of the part. Please contact authorized Vishay personnel to obtain written terms and conditions regarding products designed for such applications. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document or by any conduct of Vishay. Product names and markings noted herein may be trademarks of their respective owners. Material Category Policy Vishay Intertechnology, Inc. hereby certifies that all its products that are identified as RoHS-Compliant fulfill the definitions and restrictions defined under Directive 2011/65/EU of The European Parliament and of the Council of June 8, 2011 on the restriction of the use of certain hazardous substances in electrical and electronic equipment (EEE) - recast, unless otherwise specified as non-compliant. Please note that some Vishay documentation may still make reference to RoHS Directive 2002/95/EC. We confirm that all the products identified as being compliant to Directive 2002/95/EC conform to Directive 2011/65/EU. Revision: 12-Mar-12 1 Document Number: 91000