SK50GH065F $ - ./ 01 Absolute Maximum Ratings Symbol Conditions IGBT ,2+ $3 - ./ 0 % $3 - 6./ 0 %:; 455 , /7 8 $ - 95 0 75 8 655 8 < .5 , $3 - 6./ 0 65 A $ - ./ 0 9. 8 $ - 95 0 /5 8 6.5 8 %:;- . % , - =55 ,> ,&2 ? .5 ,> ,2+ @ 455 , Units $ - ./ 0 ,&2+ SEMITOP® 3 Values Inverse Diode IGBT Module %' %':; SK50GH065F $3 - 6/5 0 %':;- . %' Module %:;+ Target Data $*3 B75 CCC D6/5 0 $ B75 CCC D6./ 0 ./55 , , Features ! "#$ %&$ $ '( ) * ) Typical Applications* + %* + !#+ Remarks ,' - * * 8 81 6 C $ - ./ 01 Characteristics Symbol Conditions IGBT ,&2 ,&2 - ,21 % - 51E 8 %2+ ,&2 - 455 ,1 ,2 - ,2+ $3 - ./ 0 %&2+ ,2 - 5 ,1 ,&2 - .5 , $3 - ./ 0 ,25 2 ,2 ,&2 - 6/ , % - 45 81 ,&2 - 6/ , ,2 - ./1 ,&2 - 5 , :& - 6/ G I - 6.55 8IA :& - 6/ G I - 6.55 8IA 2 :3B typ. max. Units = 7 / , 5155.. 8 6.5 8 $3 - ./ 0 61. 61= , $3 - 6./ 0 616 51F , $3 - ./0 6. G $3 - 6./0 .. G , $3 - ./0 *C . .1/ $3 - 6./0 *C .1. .1E - 6 ;H =1. 51= ' ' 5169 ' 615E J 2 min. , - =55, %- 458 $3 - 6./ 0 ,&2-<6/, 61E4 %&$ , J 519/ KI( GH 1 25-08-2009 DIL © by SEMIKRON SK50GH065F Characteristics Symbol Conditions Inverse Diode ,' - ,2 %' - 45 8> ,&2 - 5 , min. $3 - ./ 0 *C typ. max. Units 616 614 , 61. , $3 - 6./ 0 *C SEMITOP® 3 IGBT Module ,'5 $3 - 6/5 0 519/ , ' $3 - 6/5 0 6. G $3 - 6./ 0 75 = 8 A 517. J %::; L %' - 75 8 I - 6.55 8IA 2 ,-=55, :3B ; M .1./ =5 616 KI( .1/ " SK50GH065F This is an electrostatic discharge sensitive device (ESDS), international standard IEC 60747-1, Chapter IX. Target Data Features * The specifications of our components may not be considered as an assurance of component characteristics. Components have to be tested for the respective application. Adjustments may be necessary. The use of SEMIKRON products in life support appliances and systems is subject to prior specification and written approval by SEMIKRON. We therefore strongly recommend prior consultation of our personal. ! "#$ %&$ $ '( ) * ) Typical Applications* + %* + !#+ Remarks ,' - * * GH 2 25-08-2009 DIL © by SEMIKRON SK50GH065F Fig. 1 Typ. output characteristic, inclusive RCC'+ EE' Fig. 3 Typ. turn-on /-off energy = f (IC) Fig. 4 Typ. turn-on /-off energy = f (RG) Fig. 6 Typ. gate charge characteristic 3 25-08-2009 DIL © by SEMIKRON SK50GH065F Fig. 7 Typ. switching times vs. IC 4 Fig. 8 Typ. switching times vs. gate resistor RG 25-08-2009 DIL © by SEMIKRON SK50GH065F UL recognized file no. E 63 532 $6F + 1 #1 N . $6F 5 & 25-08-2009 DIL © by SEMIKRON