DMN2004K N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR Product Summary Features and Benefits RDS(ON) ID TA = 25°C 0.55Ω @ VGS = 4.5V 630mA 0.9Ω @ VGS = 1.8V 410mA V(BR)DSS • • • • • • • • • 20V Description and Applications This new generation MOSFET has been designed to minimize the onstate resistance (RDS(on)) and yet maintain superior switching performance, making it ideal for high efficiency power management applications. • • Low On-Resistance: RDS(ON) = 550(max)mΩ @ VGS = 4.5V Low Gate Threshold Voltage Low Input Capacitance Fast Switching Speed Low Input/Output Leakage ESD Protected up to 2KV Lead Free By Design/RoHS Compliant (Note 1) "Green" Device (Note 2) Qualified to AEC-Q101 standards for High Reliability Mechanical Data • • DC-DC Converters Power management functions Case: SOT-23 Case Material: Molded Plastic, “Green” Molding Compound. UL Flammability Classification Rating 94V-0 Moisture Sensitivity: Level 1 per J-STD-020 Terminals: Finish ⎯ Matte Tin annealed over Alloy 42 leadframe. Solderable per MIL-STD-202, Method 208 Terminal Connections: See Diagram Weight: 0.008 grams (approximate) • • • • Drain SOT-23 D Gate Gate Protection Diode ESD PROTECTED TO 2kV Equivalent Circuit Top View S G Source Top View Ordering Information (Note 3) Part Number DMN2004K-7 Notes: Case SOT-23 Packaging 3000/Tape & Reel 1. No purposefully added lead. 2. Diodes Inc.'s "Green" policy can be found on our website at http://www.diodes.com. 3. For packaging details, go to our website at http://www.diodes.com. Marking Information Date Code Key Year Code Month Code 2006 T Jan 1 2007 U Feb 2 DMN2004K Document number: DS30938 Rev. 5 - 2 Mar 3 NAB = Product Type Marking Code YM = Date Code Marking Y = Year (ex: T = 2006) M = Month (ex: 9 = September) YW NAB 2008 V Apr 4 May 5 2009 W Jun 6 1 of 6 www.diodes.com 2010 X Jul 7 Aug 8 2011 Y Sep 9 Oct O 2012 Z Nov N Dec D November 2010 © Diodes Incorporated DMN2004K Maximum Ratings @TA = 25°C unless otherwise specified Characteristic Symbol VDSS VGSS Drain-Source Voltage Gate-Source Voltage Drain Current (Note 4) VGS = 4.5V Steady State Drain Current (Note 4) VGS = 1.8V Steady State TA = 25°C TA = 85°C TA = 25°C TA = 85°C Value 20 ±8 630 450 ID mA 410 300 1.5 ID Pulsed Drain Current (Note 5) Units V V IDM mA A Thermal Characteristics @TA = 25°C unless otherwise specified Characteristic Total Power Dissipation (Note 4) Thermal Resistance, Junction to Ambient Operating and Storage Temperature Range Symbol PD RθJA TJ, TSTG Value 350 357 -65 to +150 Units mW °C/W °C Electrical Characteristics @TA = 25°C unless otherwise specified Characteristic OFF CHARACTERISTICS (Note 6) Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current Gate-Source Leakage ON CHARACTERISTICS (Note 6) Gate Threshold Voltage Static Drain-Source On-Resistance Forward Transfer Admittance Source Current Diode Forward Voltage (Note 6) DYNAMIC CHARACTERISTICS Input Capacitance Output Capacitance Reverse Transfer Capacitance Gate Resistance Total Gate Charge Gate-Source Charge Gate-Drain Charge Turn-On Delay Time Turn-On Rise Time Turn-Off Delay Time Turn-Off Fall Time Body Diode Reverse Recovery Time Body Diode Reverse Recovery Charge Notes: Symbol Min Typ Max Unit Test Condition BVDSS IDSS IGSS 20 ⎯ ⎯ ⎯ ⎯ ⎯ ⎯ 1 ±1 V μA μA VGS = 0V, ID = 10μA VDS = 16V, VGS = 0V VGS = ±4.5V, VDS = 0V VGS(th) 0.5 ⎯ 1.0 V RDS (ON) ⎯ 0.4 0.5 0.7 0.55 0.70 0.9 Ω |Yfs| IS VSD 200 ⎯ 0.6 ⎯ ⎯ ⎯ ⎯ 0.5 1 ms A V VDS = VGS, ID = 250μA VGS = 4.5V, ID = 540mA VGS = 2.5V, ID = 500mA VGS = 1.8V, ID = 350mA VDS =10V, ID = 0.2A ⎯ VGS = 0V, IS = 500mA Ciss Coss Crss Rg Qg Qgs Qgd tD(on) tr tD(off) tf trr Qrr ⎯ ⎯ ⎯ ⎯ ⎯ ⎯ ⎯ ⎯ ⎯ ⎯ ⎯ ⎯ ⎯ ⎯ ⎯ ⎯ 292 0.9 0.2 0.2 5.7 8.4 59.4 37.6 5.5 0.85 150 25 20 ⎯ ⎯ ⎯ ⎯ ⎯ ⎯ ⎯ ⎯ ⎯ ⎯ pF pF pF Ω VDS = 0V, VGS = 0V, f = 1.0MHz nC VDS = 15V, VGS = 4.5V, ID = 0.5A ns VGS = 8V, VDS = 15V, RG = 6Ω, RL = 30Ω ns nC IS = 0.5A, dI/dt = -100A/μs IS = 0.5A, dI/dt = -100A/μs VDS = 16V, VGS = 0V f = 1.0MHz 4. Device mounted on FR-4 PCB, with minimum recommended pad layout, single sided. 5. Pulse width ≤10μS, Duty Cycle ≤1%. 6. Short duration pulse test used to minimize self-heating effect. DMN2004K Document number: DS30938 Rev. 5 - 2 2 of 6 www.diodes.com November 2010 © Diodes Incorporated ID, DRAIN CURRENT (A) DMN2004K 0 0 1 2 3 4 VDS, DRAIN-SOURCE VOLTAGE (V) Fig. 1 Typical Output Characteristics 5 VGS, GATE-SOURCE VOLTAGE (V) Fig. 2 Reverse Drain Current vs. Source-Drain Voltage RDS(on), STATIC DRAIN-SOURCE ON-RESISTANCE (Ω) 1 0.5 0.1 Tch, CHANNEL TEMPERATURE (°C) Fig. 3 Gate Threshold Voltage vs. Channel Temperature ID, DRAIN CURRENT (A) Fig. 4 Static Drain-Source On-Resistance vs. Drain Current TA = 125°C TA = 150°C TA = 85°C TA = -55° C T A = 25 °C T A = 0 °C TA = -25° C RDS(on), STATIC DRAIN-SOURCE ON-RESISTANCE (Ω) (NORMALIZED) RDS(on), STATIC DRAIN-SOURCE ON-RESISTANCE (Ω) VGS = 5V Pulsed 6 ID, DRAIN CURRENT (A) Fig. 5 Static Drain-Source On-Resistance vs. Drain Current DMN2004K Document number: DS30938 Rev. 5 - 2 3 of 6 www.diodes.com November 2010 © Diodes Incorporated RDS(on), STATIC DRAIN-SOURCE ON-RESISTANCE (Ω) RDS(on), STATIC DRAIN-SOURCE ON-RESISTANCE (Ω) (NORMALIZED) DMN2004K Tj, JUNCTION TEMPERATURE (°C) Fig. 8 Static Drain-Source, On-Resistance vs. Temperature |Yfs|, FORWARD TRANSFER ADMITTANCE (S) IDR, REVERSE DRAIN CURRENT (A) IDSS, DRAIN-SOURCE LEAKAGE CURRENT (nA) ID, DRAIN CURRENT (A) Fig. 7 On-Resistance vs. Drain Current and Gate Voltage 1,000 ID, DRAIN CURRENT (mA) Fig. 11 Forward Transfer Admittance vs. Drain Current DMN2004K Document number: DS30938 Rev. 5 - 2 4 of 6 www.diodes.com VDS, DRAIN SOURCE VOLTAGE (V) Fig. 12 Capacitance Variation November 2010 © Diodes Incorporated DMN2004K 10 0.1 VGS, GATE-SOURCE VOLTAGE (V) IS, SOURCE CURRENT (A) 1 TA = 25°C 0.01 0.001 0 8 VDS = 15V ID = 0.5A 6 4 2 0 0.2 0.4 0.6 0.8 1.0 1.2 VSD, SOURCE-DRAIN VOLTAGE (V) Fig. 13 Diode Forward Voltage vs. Current 0 0.5 1 1.5 2 2.5 Qg, TOTAL GATE CHARGE (nC) Fig. 14 Gate-Charge Characteristics 3 Package Outline Dimensions A B C H K M K1 D J F L G SOT-23 Dim Min Max Typ A 0.37 0.51 0.40 B 1.20 1.40 1.30 C 2.30 2.50 2.40 D 0.89 1.03 0.915 F 0.45 0.60 0.535 G 1.78 2.05 1.83 H 2.80 3.00 2.90 J 0.013 0.10 0.05 K 0.903 1.10 1.00 K1 0.400 L 0.45 0.61 0.55 M 0.085 0.18 0.11 0° 8° α All Dimensions in mm Suggested Pad Layout Y Z C X DMN2004K Document number: DS30938 Rev. 5 - 2 Dimensions Value (in mm) Z 2.9 X 0.8 Y 0.9 C 2.0 E 1.35 E 5 of 6 www.diodes.com November 2010 © Diodes Incorporated DMN2004K IMPORTANT NOTICE DIODES INCORPORATED MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO THIS DOCUMENT, INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE (AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION). 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Life support devices or systems are devices or systems which: 1. are intended to implant into the body, or 2. support or sustain life and whose failure to perform when properly used in accordance with instructions for use provided in the labeling can be reasonably expected to result in significant injury to the user. B. A critical component is any component in a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or to affect its safety or effectiveness. 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