DMN2005K N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR NEW PRODUCT Features • • • • • • • • Mechanical Data • • Low On-Resistance Very Low Gate Threshold Voltage, 0.9V Max. Fast Switching Speed Low Input/Output Leakage Ultra-Small Surface Mount Package Lead Free By Design/RoHS Compliant (Note 2) "Green" Device (Note 4) ESD Protected Gate Case: SOT-23 Case Material: Molded Plastic, “Green” Molding Compound. UL Flammability Classification Rating94V-0 Moisture Sensitivity: Level 1 per J-STD-020C Terminal Connections: See Diagram Terminals: Finish ⎯ Matte Tin annealed over Copper leadframe. Solderable per MIL-STD-202, Method 208 Marking Information: See Page 3 Ordering & Date Code Information: See Page 3 Weight: 0.008 grams (approximate) • • • • • • Drain SOT-23 D Body Diode Gate ESD protected TOP VIEW Gate Protection Diode TOP VIEW Equivalent Circuit Maximum Ratings S G Source @TA = 25°C unless otherwise specified Characteristic Drain-Source Voltage Gate-Source Voltage Drain Current per element (Note 1) Thermal Characteristics Symbol VDSS VGSS Continuous Pulsed (Note 3) Characteristic Unit V V Value 350 357 -65 to +150 Unit mW °C/W °C mA @TA = 25°C unless otherwise specified Characteristic Total Power Dissipation (Note 1) Thermal Resistance, Junction to Ambient Operating and Storage Temperature Range Electrical Characteristics ID Value 20 ±10 300 600 Symbol PD RθJA Tj, TSTG @TA = 25°C unless otherwise specified Symbol Min Typ Max Unit Test Condition Drain-Source Breakdown Voltage BVDSS 20 ⎯ ⎯ V VGS = 0V, ID = 100μA Zero Gate Voltage Drain Current IDSS ⎯ ⎯ 10 μA VDS = 17V, VGS = 0V Gate-Source Leakage IGSS ⎯ ⎯ ±5 μA VGS = ±8V, VDS = 0V VGS(th) 0.53 ⎯ 0.9 V VDS = VGS, ID = 100μA RDS (ON) ⎯ ⎯ ⎯ ⎯ 3.5 1.7 Ω VGS = 1.8V, ID = 200mA VGS = 2.7V, ID = 200mA ⏐Yfs⏐ 40 ⎯ ⎯ mS OFF CHARACTERISTICS (Note 5) ON CHARACTERISTICS (Note 5) Gate Threshold Voltage Static Drain-Source On-Resistance Forward Transfer Admittance Notes: 1. 2. 3. 4. 5. VDS = 3V, ID = 10A Device mounted on FR-4 PCB. No purposefully added lead. Pulse width ≤10μS, Duty Cycle ≤1%. Diodes Inc.'s "Green" policy can be found on our website at http://www.diodes.com/products/lead_free/index.php. Short duration pulse test used to minimize self-heating effect. DMN2005K Document number: DS30734 Rev. 5 - 2 1 of 4 www.diodes.com November 2007 © Diodes Incorporated DMN2005K 2 VGS = 2.0V 1.8 ID, DRAIN CURRENT (A) 1.4 o TA = 25 C VGS =1.8V 1.2 1 VGS = 1.6V 0.8 VGS = 1.4V 0.6 0.4 VGS = 1.2V 0.2 0 0 VGS = 1.0V 2 1 3 VDS, DRAIN-SOURCE VOLTAGE (V) Fig. 1 Typical Output Characteristics 4 VGS, GATE-SOURCE VOLTAGE (V) Fig. 2 Reverse Drain Current vs. Source-Drain Voltage RDS(ON), STATIC DRAIN-SOURCE ON-RESISTANCE (Ω) VGS = 2.7 V Pulsed VDS = 10V ID = 1mA Pulsed ID, DRAIN CURRENT (A) Fig. 4 Static Drain-Source On-State Resistance vs. Drain Current TA, AMBIENT TEMPERATURE (°C) Fig. 3 Gate Threshold Voltage vs. Ambient Temperature 5 TA = 25° C Pulsed RDS(ON), STATIC DRAIN-SOURCE ON-RESISTANCE (Ω) RDS(ON), STATIC DRAIN-SOURCE ON-RESISTANCE (Ω) NEW PRODUCT 1.6 4 3 ID = 200mA 2 1 0 0 1 2 3 4 5 6 ID, DRAIN CURRENT (A) Fig. 5 Static Drain-Source On-Resistance vs. Drain Current DMN2005K Document number: DS30734 Rev. 5 - 2 2 of 4 www.diodes.com November 2007 © Diodes Incorporated RDS(ON), STATIC DRAIN-SOURCE ON-RESISTANCE (Ω) 0.0 0.2 1.0 0.4 0.6 0.8 VSD, DRAIN-SOURCE VOLTAGE (V) Fig. 8 Reverse Drain Current vs. Source-Drain Voltage TA, AMBIENT TEMPERATURE (°C) Fig. 7 Static Drain-Source, On-Resistance vs. Ambient Temperature |YfS|, FORWARD TRANSFER ADMITTANCE (S) f = 1MHz CT, CAPACITANCE (pF) Ciss Coss Crss ID, DRAIN CURRENT (A) Fig. 9 Forward Transfer Admittance vs. Drain Current Ordering Information (Note 6) Part Number DMN2005K-7 Notes: Case SOT-23 Packaging 3000/Tape & Reel 6. For packaging details, go to our website at http://www.diodes.com/datasheets/ap02007.pdf. Marking Information DM Date Code Key Year YM NEW PRODUCT DMN2005K DM = Product Type Marking Code YM = Date Code Marking Y = Year ex: T = 2006 M = Month ex: 9 = September 2006 2007 2008 2009 2010 2011 2012 T U V W X Y Z Code Month Jan Feb Mar Apr May Jun Jul Aug Sep Oct Nov Dec Code 1 2 3 4 5 6 7 8 9 O N D DMN2005K Document number: DS30734 Rev. 5 - 2 3 of 4 www.diodes.com November 2007 © Diodes Incorporated DMN2005K Package Outline Dimensions A B C NEW PRODUCT TOP VIEW G H K M N J D E L SOT-23 Dim Min Max A 0.37 0.51 B 1.20 1.40 C 2.30 2.50 D 0.89 1.03 E 0.45 0.60 G 1.78 2.05 H 2.80 3.00 J 0.013 0.10 K 0.903 1.10 L 0.45 0.61 M 0.085 0.180 N ⎯ ⎯ 0° 8° α All Dimensions in mm Suggested Pad Layout Y Z G C X Dimensions Value (in mm) Z 3.4 G 0.7 X 0.9 Y 1.4 C 2.0 E 0.9 E IMPORTANT NOTICE Diodes Incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other changes without further notice to any product herein. Diodes Incorporated does not assume any liability arising out of the application or use of any product described herein; neither does it convey any license under its patent rights, nor the rights of others. The user of products in such applications shall assume all risks of such use and will agree to hold Diodes Incorporated and all the companies whose products are represented on our website, harmless against all damages. LIFE SUPPORT Diodes Incorporated products are not authorized for use as critical components in life support devices or systems without the expressed written approval of the President of Diodes Incorporated. DMN2005K Document number: DS30734 Rev. 5 - 2 4 of 4 www.diodes.com November 2007 © Diodes Incorporated