DMN2004DMK DUAL N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR NEW PRODUCT Features • • • • • • • • • • • Mechanical Data • • Dual N-Channel MOSFET Low On-Resistance Low Gate Threshold Voltage Low Input Capacitance Fast Switching Speed Low Input/Output Leakage Ultra-Small Surface Mount Package Lead Free By Design/RoHS Compliant (Note 2) ESD Protected up to 2KV "Green" Device (Note 4) Qualified to AEC-Q101 standards for High Reliability Case: SOT-26 Case Material: Molded Plastic, “Green” Molding Compound. UL Flammability Classification Rating 94V-0 Moisture Sensitivity: Level 1 per J-STD-020C Terminal Connections: See Diagram Terminals: Finish ⎯ Matte Tin annealed over Copper leadframe. Solderable per MIL-STD-202, Method 208 Marking Information: See Page 4 Ordering Information: See Page 4 Weight: 0.015 grams (approximate) • • • • • • SOT-26 ESD protected up 2kV Maximum Ratings TOP VIEW D2 G1 S1 S2 G2 D1 TOP VIEW Internal Schematic @TA = 25°C unless otherwise specified Characteristic Drain-Source Voltage Gate-Source Voltage Drain Current (Note 1) TA = 25°C TA = 85°C Steady State Pulsed Drain Current (Note 3) Thermal Characteristics Characteristic OFF CHARACTERISTICS (Note 5) Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current Gate-Source Leakage ON CHARACTERISTICS (Note 5) Gate Threshold Voltage Static Drain-Source On-Resistance Forward Transfer Admittance Diode Forward Voltage (Note 5) DYNAMIC CHARACTERISTICS Input Capacitance Output Capacitance Reverse Transfer Capacitance Notes: 1. 2. 3. 4. 5. Value 20 ±8 Units V V ID 540 390 mA IDM 1.5 A Symbol Pd RθJA Tj, TSTG Value 225 556 -65 to +150 Units mW °C/W °C @TA = 25°C unless otherwise specified Characteristic Total Power Dissipation (Note 1) Thermal Resistance, Junction to Ambient Operating and Storage Temperature Range Electrical Characteristics Symbol VDSS VGSS @TA = 25°C unless otherwise specified Symbol Min Typ Max Unit BVDSS IDSS IGSS 20 ⎯ ⎯ ⎯ ⎯ ⎯ ⎯ 1 ±1 V μA μA VGS = 0V, ID = 10μA VDS = 16V, VGS = 0V VGS = ±4.5V, VDS = 0V VGS(th) 0.5 ⎯ 0.4 0.5 0.7 1.0 V 0.55 0.70 0.9 Ω VDS = VGS, ID = 250μA VGS = 4.5V, ID = 540mA VGS = 2.5V, ID = 500mA VGS = 1.8V, ID = 350mA VDS =10V, ID = 0.2A VGS = 0V, IS = 115mA RDS (ON) ⎯ |Yfs| VSD 200 0.5 ⎯ ⎯ ⎯ 1.4 ms V Ciss Coss Crss ⎯ ⎯ ⎯ ⎯ ⎯ ⎯ 150 25 20 pF pF pF Test Condition VDS = 16V, VGS = 0V f = 1.0MHz Device mounted on FR-4 PCB. No purposefully added lead. Pulse width ≤10μS, Duty Cycle ≤1%. Diodes Inc.’s “Green” policy can be found on our website at http://www.diodes.com/products/lead_free/index.php. Short duration pulse test used to minimize self-heating effect. DMN2004DMK Document number: DS30937 Rev. 3 - 2 1 of 4 www.diodes.com November 2007 © Diodes Incorporated ID, DRAIN CURRENT (A) NEW PRODUCT DMN2004DMK 0 0 1 2 3 4 5 VGS, GATE-SOURCE VOLTAGE (V) Fig. 2 Reverse Drain Current vs. Source-Drain Voltage VDS, DRAIN-SOURCE VOLTAGE (V) Fig. 1 Typical Output Characteristics 1 0.1 Tch, CHANNEL TEMPERATURE (°C) Fig. 3 Gate Threshold Voltage vs. Channel Temperature ID , DRAIN CURRENT (A) Fig. 4 Static Drain-Source On-Resistance vs. Drain Current 6 ID, DRAIN CURRENT (A) Fig. 5 Static Drain-Source On-Resistance vs. Drain Current DMN2004DMK Document number: DS30937 Rev. 3 - 2 2 of 4 www.diodes.com November 2007 © Diodes Incorporated NEW PRODUCT DMN2004DMK Tj, JUNCTION TEMPERATURE (°C) Fig. 8 Static Drain-Source, On-Resistance vs. Temperature |Yfs|, FORWARD TRANSFER ADMITTANCE (S) IDR, REVERSE DRAIN CURRENT (A) IDSS, DRAIN-SOURCE LEAKAGE CURRENT (nA) ID, DRAIN CURRENT (A) Fig. 7 On-Resistance vs. Drain Current and Gate Voltage 1000 ID, DRAIN CURRENT (mA) Fig. 11 Forward Transfer Admittance vs. Drain Current DMN2004DMK Document number: DS30937 Rev. 3 - 2 3 of 4 www.diodes.com VDS, DRAIN SOURCE VOLTAGE (V) Fig. 12 Capacitance Variation November 2007 © Diodes Incorporated DMN2004DMK Ordering Information (Note 6) Part Number DMN2004DMK-7 Notes: Case SOT-26 Packaging 3000/Tape & Reel 6. For packaging details, go to our website at http://www.diodes.com/datasheets/ap02007.pdf. NEW PRODUCT Marking Information D2 G1 S1 NAB YM S2 Date Code Key Year Code 2006 T Month Code Jan 1 G2 D1 2007 U Feb 2 NAB = Marking Code YM = Date Code Marking Y = Year ex: T = 2006 M = Month ex: 9 = September 2008 V Mar 3 Apr 4 May 5 2009 W Jun 6 2010 X Jul 7 Aug 8 2011 Y Sep 9 Oct O 2012 Z Nov N Dec D Package Outline Dimensions A TOP VIEW B C H K M J D F L SOT-26 Dim Min Max Typ A 0.35 0.50 0.38 B 1.50 1.70 1.60 C 2.70 3.00 2.80 D ⎯ ⎯ 0.95 F ⎯ ⎯ 0.55 H 2.90 3.10 3.00 J 0.013 0.10 0.05 K 1.00 1.30 1.10 L 0.35 0.55 0.40 M 0.10 0.20 0.15 0° 8° α ⎯ All Dimensions in mm Suggested Pad Layout E Z E C G Dimensions Value (in mm) Z 3.20 G 1.60 X 0.55 Y 0.80 C 2.40 E 0.95 Y X IMPORTANT NOTICE Diodes Incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other changes without further notice to any product herein. Diodes Incorporated does not assume any liability arising out of the application or use of any product described herein; neither does it convey any license under its patent rights, nor the rights of others. The user of products in such applications shall assume all risks of such use and will agree to hold Diodes Incorporated and all the companies whose products are represented on our website, harmless against all damages. LIFE SUPPORT Diodes Incorporated products are not authorized for use as critical components in life support devices or systems without the expressed written approval of the President of Diodes Incorporated. DMN2004DMK Document number: DS30937 Rev. 3 - 2 4 of 4 www.diodes.com November 2007 © Diodes Incorporated