NORMALLY-OFF SILICON CARBIDE POWER JFET SML100M12MSF • RDS(on)max of 0.150Ω • High Temperature Operation Tj = 200°C • Low Gate Charge and Intrinsic Capacitance • Positive Temperature Coefficient and Temperature Independent Switching Behaviour APPLICATIONS • • SMPS Motor Drive • • UPS Induction Heating ABSOLUTE MAXIMUM RATINGS (TC = 25°C unless otherwise stated) VDS RDS(on)max ID IDM PD VGS TJ TJstg Drain-Source Blocking Voltage Drain-Source On-resistance Available Drain Current Pulsed Drain Current Power Dissipation DC Gate-Source Voltage Operating Temperature Storage Temperature 1200 V 0.15 Ω 24 A 34 A 70 W -15 to +3 V -55 to +200 °C -55 to +225 °C THERMAL PROPERTIES Symbols Parameters RθJC Thermal Resistance, Junction To Case, TC = 25°C Min. Typ. Max. Units 1.8 2.5 °C/W Semelab Limited reserves the right to change test conditions, parameter limits and package dimensions without notice. Information furnished by Semelab is believed to be both accurate and reliable at the time of going to press. However Semelab assumes no responsibility for any errors or omissions discovered in its use. Semelab encourages customers to verify that datasheets are current before placing orders. Semelab Limited Coventry Road, Lutterworth, Leicestershire, LE17 4JB Telephone +44 (0) 1455 556565 Fax +44 (0) 1455 552612 Email: [email protected] Website: http://www.semelab-tt.com Document Number 8965 Issue 2 Page 1 of 1 NORMALLY-OFF SILICON CARBIDE POWER JFET SML100M12MSF ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise stated) Symbols Parameters Min. Typ. Max. Units VGS = 0V, ID = 1.0mA 1200 - - V VDS = 1200V, VGS = 0V - - 1.0 VDS = 1200V, VGS = -5V - 0.11 - VDS = 1.0V, ID = 34mA 0.70 1.00 1.25 VGS = 2.4V - 0.25 1.5 VGS = -15V - 0.1 1.5 ID = 13A, VGS = 3V, TJ = 25°C - 0.09 0.15 ID = 13A, VGS = 3V, TJ = 175°C - 0.29 - VDS = 600V, ID = 13A, VGS = 0V to +3V - 28 - - 9.3 - - 20 - - 30 - Rise time (Resistive Load) - 70 - Ciss Input Capacitance - 642 - Coss Output Capacitance - 69 - Crss Reverse Transfer Capacitance - 68 - BVDSS Drain-Source Blocking Voltage IDSS Drain-Source Leakage Current VGS(th) Gate-Source Leakage Current IGSS RDS(on) Gate Threshold Voltage (1) Drain-Source On-resistance Qg Total Gate Charge Qgs Gate-Source Charge ton Turn-on Delay (Resistive Load) Turn-off Delay (Resistive Load) toff tr Test Conditions mA mA VDS = 600V, ID = 13A, CBP = 33nF, RCL = 110Ω VDS = 100V V Ω nC ns pF Notes (1) Pulse Width ≤ 300us, δ ≤ 2% Semelab Limited Coventry Road, Lutterworth, Leicestershire, LE17 4JB Telephone +44 (0) 1455 556565 Fax +44 (0) 1455 552612 Email: [email protected] Website: http://www.semelab-tt.com Document Number 8965 Issue 2 Page 2 of 2 NORMALLY-OFF SILICON CARBIDE POWER JFET SML100M12MSF MECHANICAL DATA Dimensions in mm (inches) TO258 (TO-258AA) Pin 1 – Gate Pin 2 - Source Semelab Limited Coventry Road, Lutterworth, Leicestershire, LE17 4JB Telephone +44 (0) 1455 556565 Fax +44 (0) 1455 552612 Email: [email protected] Pin 3 – Drain Website: http://www.semelab-tt.com Document Number 8965 Issue 2 Page 3 of 3