DVRN6056 VOLTAGE REFERENCE ARRAY Features Mechanical Data • • • • • • Epitaxial Planar Die Construction Ideally Suited for Automated Assembly Processes Lead Free/RoHS Compliant Version (Notes 2 & 3) “Green” Device (Note 3) • • • • • • Case: SOT-26 Case Material: Molded Plastic, “Green” Molding Compound (Note 3) UL Flammability Classification Rating 94V-0 Moisture Sensitivity: Level 1 per J-STD-020 Terminal Connections: See Diagram Terminals: Matte Tin Finish annealed over Copper leadframe (Lead Free Plating). Solderable per MIL-STD-202, Method 208 Marking Information: See Page 4 Ordering Information: See Page 4 Weight: 0.008 grams (approximate) NC K1 Z1 A1 Top View E1 Q1 B1 C1 Device Schematic Maximum Ratings, NPN Transistor Element (Q1) @TA = 25°C unless otherwise specified Characteristic Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current - Continuous (Note 1) Symbol VCBO VCEO VEBO IC Value 60 40 6.0 600 Unit V V V mA Symbol VF Value 0.9 Unit V Symbol PD RθJA TJ, TSTG Value 300 417 -55 to +150 Unit mW °C/W °C Maximum Ratings, Zener Element (Z1) @TA = 25°C unless otherwise specified Characteristic Forward Voltage @ IF = 10mA Thermal Characteristics Characteristic Power Dissipation Thermal Resistance, Junction to Ambient Operating and Storage Temperature Range Notes: (Note 1) (Note 1) 1. Part mounted on FR-4 board with recommended pad layout, which can be found on our website at http://www.diodes.com/datasheets/ap02001.pdf. 2. No purposefully added lead. 3. Product manufactured with date code WN (Week 45, 2009) and newer are built with Green Molding Compound and Lead-free plating. Product manufactured prior to date code WO are built with Tin-Lead plating, Non-Green Molding Compound and may contain Halogens or Sb2O3 Fire Retardants. DVRN6056 Document number: DS30556 Rev. 5 - 2 1 of 5 www.diodes.com March 2010 © Diodes Incorporated DVRN6056 Electrical Characteristics, NPN Transistor Element (Q1) @TA = 25°C unless otherwise specified Characteristic OFF CHARACTERISTICS (Note 4) Collector-Base Breakdown Voltage Collector-Emitter Breakdown Voltage Emitter-Base Breakdown Voltage Collector Cutoff Current Base Cutoff Current ON CHARACTERISTICS (Note 4) Symbol Min Max Unit V(BR)CBO V(BR)CEO V(BR)EBO ICEX IBL 60 40 6.0 ⎯ ⎯ ⎯ ⎯ ⎯ 100 100 V V V nA nA hFE 20 40 80 100 40 ⎯ ⎯ ⎯ 300 ⎯ Collector-Emitter Saturation Voltage VCE(SAT) ⎯ 0.40 0.75 V Base-Emitter Saturation Voltage VBE(SAT) 0.75 ⎯ 0.95 1.2 V Ccb Ceb hie hre hfe hoe fT ⎯ ⎯ 1.0 0.1 40 1.0 250 6.5 30 15 8.0 500 30 ⎯ pF pF kΩ -4 x 10 ⎯ μS MHz td tr ts tf ⎯ ⎯ ⎯ ⎯ 15 20 225 30 ns ns ns ns DC Current Gain SMALL SIGNAL CHARACTERISTICS Output Capacitance Input Capacitance Input Impedance Voltage Feedback Ratio Small Signal Current Gain Output Admittance Current Gain-Bandwidth Product SWITCHING CHARACTERISTICS Delay Time Rise Time Storage Time Fall Time ⎯ Test Condition IC = 100μA, IE = 0 IC = 1.0mA, IB = 0 IE = 100μA, IC = 0 VCE = 35V, VEB(OFF) = 0.4V VCE = 35V, VEB(OFF) = 0.4V IC = 100µA, VCE = 1.0V IC = 1.0mA, VCE = 1.0V IC = 10mA, VCE = 1.0V IC = 150mA, VCE = 1.0V IC = 500mA, VCE = 2.0V IC = 150mA, IB = 15mA IC = 500mA, IB = 50mA IC = 150mA, IB = 15mA IC = 500mA, IB = 50mA VCB = 5.0V, f = 1.0MHz, IE = 0 VEB = 0.5V, f = 1.0MHz, IC = 0 VCE = 10V, IC = 1.0mA, f = 1.0kHz VCE = 10V, IC = 20mA, f = 100MHz VCC = 30V, IC = 150mA, VBE(off) = 2.0V, IB1 = 15mA VCC = 30V, IC = 150mA, IB1 = IB2 = 15mA Electrical Characteristics, Zener Element (Z1) @TA = 25°C unless otherwise specified Zener Voltage Range (Note 4) VZ @ IZT Min (V) 5.49 Nom (V) 5.6 Notes: Max (V) 5.73 Maximum Zener Impedance IZT mA 5 ZZT @ IZT ZZK @ IZK = 0.5mA Ω 200 60 Maximum Reverse Leakage Current (Note 4) IR @ VR V μA 1.0 2.5 4. Short duration pulse test used to minimize self-heating effect. NPN Transistor Section (Q1) 1,000 400 TA = 125°C 300 hFE, DC CURRENT GAIN PD, POWER DISSIPATION (mW) 350 250 100 200 150 100 TA = -25°C TA = +25°C 10 50 VCE = 1.0V 0 50 75 100 125 150 175 200 TA, AMBIENT TEMPERATURE (°C) Fig. 1 Power Dissipation vs. Ambient Temperature (Total Device) 0 25 DVRN6056 Document number: DS30556 Rev. 5 - 2 2 of 5 www.diodes.com 1 0.1 1,000 1 10 100 IC, COLLECTOR CURRENT (mA) Fig. 2 Typical DC Current Gain vs. Collector Current March 2010 © Diodes Incorporated DVRN6056 NPN Transistor Section (Q1) 2.0 30 VCE, COLLECTOR-EMITTER VOLTAGE (V) f = 1MHz 20 10 5.0 C obo 1.0 0.1 0.5 VCE(SAT), COLLECTOR-EMITTER SATURATION VOLTAGE (V) IC IB = 10 0.4 TA = 25°C 0.3 TA = 150°C 0.2 0.1 T A = -50°C 0 1 1,000 10 100 IC, COLLECTOR CURRENT (mA) Fig. 5 Typical Collector-Emitter Saturation Voltage vs. Collector Current IC = 30mA IC = 1mA IC = 10mA 1.6 IC = 100mA 1.4 IC = 300mA 1.2 1.0 0.8 0.6 0.4 0.2 0 0.001 1.0 10 50 VR, REVERSE VOLTAGE (V) Fig. 3 Typical Capacitance Characteristics VBE(ON), BASE-EMITTER TURN-ON VOLTAGE (V) CAPACITANCE (pF) Cibo 1.8 0.1 10 1 IB, BASE CURRENT (mA) Fig. 4 Typical Collector Saturation Region 0.01 100 1.0 0.9 0.8 0.7 VCE = 5V TA = -50°C T A = 25°C 0.6 0.5 TA = 150°C 0.4 0.3 0.2 0.1 10 1 100 IC, COLLECTOR CURRENT (mA) Fig. 6 Typical Base-Emitter Turn-On Voltage vs. Collector Current fT, GAIN-BANDWIDTH PRODUCT (MHz) 1,000 VCE = 5V 100 10 1 1 10 100 IC, COLLECTOR CURRENT (mA) Fig. 7 Typical Gain-Bandwidth Product vs. Collector Current DVRN6056 Document number: DS30556 Rev. 5 - 2 3 of 5 www.diodes.com March 2010 © Diodes Incorporated DVRN6056 IF, INSTANTANEOUS FORWARD CURRENT (mA) Zener Section (Z1) 1,000 100 10 1.0 0.1 0.01 0 1.2 0.6 0.8 0.4 1.0 0.2 VF, INSTANTANEOUS FORWARD VOLTAGE (V) Fig. 8 Typical Forward Characteristics Ordering Information (Note 5) Part Number DVRN6056-7-F Notes: Case SOT-26 Packaging 3000/Tape & Reel 5. For packaging details, go to our website at http://www.diodes.com/datasheets/ap02007.pdf. Marking Information YM AH1 Date Code Key Year 2003 Code P Month Code Jan 1 2004 R 2005 S Feb 2 2006 T Mar 3 2007 U Apr 4 AH1 = Product Type Marking Code YM = Date Code Marking Y = Year (ex: P = 2003) M = Month (ex: 9 = September) 2008 V May 5 2009 W Jun 6 2010 X Jul 7 2011 Y Aug 8 2012 Z Sep 9 2013 A Oct O 2014 B Nov N 2015 C Dec D Package Outline Dimensions A B C H K J DVRN6056 Document number: DS30556 Rev. 5 - 2 M D L 4 of 5 www.diodes.com SOT-26 Dim Min Max Typ A 0.35 0.50 0.38 B 1.50 1.70 1.60 C 2.70 3.00 2.80 D ⎯ ⎯ 0.95 H 2.90 3.10 3.00 J 0.013 0.10 0.05 K 1.00 1.30 1.10 L 0.35 0.55 0.40 M 0.10 0.20 0.15 0° 8° α ⎯ All Dimensions in mm March 2010 © Diodes Incorporated DVRN6056 Suggested Pad Layout C2 Z C2 C1 G Y Dimensions Value (in mm) Z 3.20 G 1.60 X 0.55 Y 0.80 C1 2.40 C2 0.95 X IMPORTANT NOTICE DIODES INCORPORATED MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO THIS DOCUMENT, INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE (AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION). 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