DVR5V0W COMPLEX ARRAY FOR VOLTAGE REGULATORS Features Mechanical Data • • • • • • • Epitaxial Planar Die Construction Selectively Paired NPN Transistors & Zener Diodes for Series Pass Voltage Regulator Circuits Ideally Suited for Automated Assembly Processes Lead, Halogen and Antimony Free, RoHS Compliant (Note 1) "Green" Device (Note 2) • • • • Case: SOT363 Case Material: Molded Plastic, "Green" Molding Compound. UL Flammability Classification Rating 94V-0 Moisture Sensitivity: Level 1 per J-STD-020 Terminals: Matte Tin Finish annealed over Alloy 42 leadframe (Lead Free Plating). Solderable per MIL-STD-202, Method 208 Terminal Connections: See Diagram Weight: 0.006 grams (approximate) SOT363 E1 A1 NC C1 (Note 3) Device DVR5V0W-7 Notes: B1 Top View Pin Configuration Top View Ordering Information K1 Packaging SOT363 Shipping 3000/Tape & Reel 1. No purposefully added lead. 2. Diodes Inc’s “Green” policy can be found on our website at http://www.diodes.com/products/lead_free/index.php. 3. For packaging details, go to our website at http://www.diodes.com/datasheets/ap02007.pdf. Marking Information YM VR04 VR04 = Product Type Marking Code YM = Date Code Marking Y = Year ex: Y = 2011 M = Month ex: 9 = September Date Code Key Year Code 2004 R 2005 S 2006 T 2007 U 2008 V 2009 W 2010 X Month Code Jan 1 Feb 2 Mar 3 Apr 4 May 5 Jun 6 Jul 7 DVR5V0W Document number: DS30578 Rev. 6 - 2 1 of 5 www.diodes.com 2011 Y Aug 8 2012 Z 2013 A 2014 B 2015 C Sep 9 Oct O Nov N Dec D July 2011 © Diodes Incorporated Maximum Ratings, Total Device @TA = 25°C unless otherwise specified Characteristic Power Dissipation (Note 4) Thermal Resistance, Junction to Ambient (Note 4) Symbol Value Unit Pd 200 mW RθJA 625 °C/W Tj, TSTG -55 to +150 °C Symbol Value Unit VCBO 45 V VCEO 18 V VEBO 5 V IC 1 A Symbol Value Unit VF 0.9 V Operating and Storage Temperature Range Maximum Ratings, NPN Transistor @TA = 25°C unless otherwise specified Characteristic Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current - Continuous (Note 4) Maximum Ratings, Zener Element @TA = 25°C unless otherwise specified Characteristic Forward Voltage @ IF = 10mA Electrical Characteristics, NPN Transistor @TA = 25°C unless otherwise specified Characteristic OFF CHARACTERISTICS (Note 5) Symbol Min Max Unit Test Condition Collector-Base Breakdown Voltage V(BR)CBO 45 ⎯ V IC = 100μA, IE = 0 Collector-Emitter Breakdown Voltage V(BR)CEO 18 ⎯ V IC = 1mA, IB = 0 Emitter-Base Breakdown Voltage V(BR)EBO 5 ⎯ V IE = 100μA, IC = 0 Collector Cutoff Current ICBO ⎯ 1 μA VCB = 40V, IE = 0 Emitter Cutoff Current IEBO ⎯ 1 μA VEB = 4V, IC = 0 hFE 150 800 ⎯ IC = 100mA, VCE = 1V VCE(SAT) ⎯ 0.5 V IC = 300mA, IB = 30mA VCB = 10V, f = 1.0MHz, IE = 0 ON CHARACTERISTICS (Note 5) DC Current Gain Collector-Emitter Saturation Voltage SMALL SIGNAL CHARACTERISTICS Output Capacitance Current Gain-Bandwidth Product Electrical Characteristics, Zener Element Cobo ⎯ 8 pF fT 100 ⎯ MHz @TA = 25°C unless otherwise specified Maximum Reverse Leakage Current (Note 5) Zener Voltage Range (Note 6) VZ @ IZT IZT Nom (V) Min (V) Max (V) mA 5.1 4.85 5.36 0.05 Notes: VCB = 10V, IE = 50mA, f = 100MHz IR @ V R μA 5 V 3 4. Part mounted on FR-4 board with recommended pad layout, which can be found on our website at http://www.diodes.com/datasheets/ap02001.pdf. 5. Short duration pulse test used to minimize self-heating effect. 6. Nominal Zener voltage is measured with the device junction in thermal equilibrium at TT = 30°C ±1°C. DVR5V0W Document number: DS30578 Rev. 6 - 2 2 of 5 www.diodes.com July 2011 © Diodes Incorporated 200 1,000 150 hFE, DC CURRENT GAIN Pd, POWER DISSIPATION (mW) (Note 4) 100 50 VCE = 1.0V 0 0 25 50 75 100 125 150 175 TA, AMBIENT TEMPERATURE (°C) Fig. 1 Max Power Dissipation vs. Ambient Temperature (Total Device) 1 200 VCE (SAT), COLLECTOR-EMITTER SATURATION VOLTAGE (mV) 10 1 0.1 0.0001 .001 .01 .1 1 IC, COLLECTOR CURRENT (A) Fig. 2 Typical DC Current Gain vs. Collector Current (NPN Transistor) 10 1,000 100 COBO, OUTPUT CAPACITANCE (pF) 100 100 10 1 VCB, COLLECTOR-BASE VOLTAGE (V) Fig. 3 Typical Output Capacitance vs. Collector-Base Voltage (NPN Transistor) 100 10 1 10 0.0001 .001 .01 .1 1 IC, COLLECTOR CURRENT (A) Fig. 4 Typical Collector Saturation Voltage vs. Collector Current (NPN Transistor) VZ, ZENER VOLTAGE (V) Fig. 5 Typical Zener Breakdown Characteristics DVR5V0W Document number: DS30578 Rev. 6 - 2 3 of 5 www.diodes.com July 2011 © Diodes Incorporated Sample Applications VCC = 6.0V R1 = 560R Q1 Vo(nom) = 5.0V Z1 R Load DVR5V0W Notes: Sample Application for DVR5V0W: R1= 560Ω VCC = 6.0V Vo(nom) = 5.0V IO = 100mA Iq(typical) = 0.5mA @ IO = 0mA Typical Vreg(load) = 0.2V from Io = 100mA to 0mA 7. Resistor R1 not included. 8. Typical performance shown is under setup and operating conditions specified in the sample applications. 9. Recommended VCC(min) ~ Vo(nom) + 1V. Package Outline Dimensions A SOT363 Dim Min Max A 0.10 0.30 B 1.15 1.35 C 2.00 2.20 D 0.65 Typ F 0.40 0.45 H 1.80 2.20 J 0 0.10 K 0.90 1.00 L 0.25 0.40 M 0.10 0.22 0° 8° α All Dimensions in mm B C H K M J D L F Suggested Pad Layout C2 Z C2 C1 G Y Dimensions Value (in mm) Z 2.5 G 1.3 X 0.42 Y 0.6 C1 1.9 C2 0.65 X DVR5V0W Document number: DS30578 Rev. 6 - 2 4 of 5 www.diodes.com July 2011 © Diodes Incorporated IMPORTANT NOTICE DIODES INCORPORATED MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO THIS DOCUMENT, INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE (AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION). 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Life support devices or systems are devices or systems which: 1. are intended to implant into the body, or 2. support or sustain life and whose failure to perform when properly used in accordance with instructions for use provided in the labeling can be reasonably expected to result in significant injury to the user. B. A critical component is any component in a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or to affect its safety or effectiveness. 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