TSM9428 Preliminary 20V N-Channel Enhancement-Mode MOSFET Pin assignment: 1. Source 2. Source 3. Source 4. Gate 5, 6, 7, 8. Drain VDS = 20V RDS (on), Vgs @ 4.5V, Ids @ 6A =30mΩ RDS (on), Vgs @ 2.5V, Ids @ 5.2A =40mΩ Features Block Diagram Advanced trench process technology High density cell design for ultra low on-resistance Fully Characterized Avalanche Voltage and Current Improved Shoot-Through FOM Ordering Information Part No. TSM9428CS Packing Package Tape & Reel SOP-8 2,500/per reel Absolute Maximum Rating (Ta = 25 oC unless otherwise noted) Parameter Symbol Limit Unit Drain-Source Voltage VDS 20V V Gate-Source Voltage VGS ±8 V ID 6 A IDM 20 A Continuous Drain Current, Pulsed Drain Current, Maximum Power Dissipation o Ta = 25 C Ta = 70 oC Operating Junction Temperature PD W 1.6 +150 o C TJ, TSTG - 55 to +150 o C Symbol Limit Rθjf 30 o C/W Rθja 50 o C/W TJ Operating Junction and Storage Temperature Range 2.5 Thermal Performance Parameter Junction to Foot (Drain) Thermal Resistance Junction to Ambient Thermal Resistance (PCB mounted) Note: Surface mounted on FR4 board t<=10sec. TSM9428 1-3 2005/08 rev. A Unit Electrical Characteristics (Ta = 25 oC unless otherwise noted) Parameter Conditions Symbol Min Typ Max Unit V Static Drain-Source Breakdown Voltage VGS = 0V, ID = 250uA BVDSS 20 -- -- Drain-Source On-State Resistance VGS = 4.5V, ID = 6A RDS(ON) -- 23 30 Drain-Source On-State Resistance VGS = 2.5V, ID = 5.2A RDS(ON) -- 28 40 Gate Threshold Voltage VDS = VGS, ID = 250uA VGS(TH) 0.6 -- -- V Zero Gate Voltage Drain Current VDS = 20V, VGS = 0V IDSS -- -- 1 uA Gate Body Leakage VGS = ±8V, VDS = 0V IGSS -- -- ±100 nA Forward Transconductance VDS = 10V, ID = 6A gfs -- 24 -- S Qg -- 21 40 Qgs -- 2.9 -- Qgd -- 6.5 -- td(on) -- 30 60 tr -- 70 140 td(off) -- 70 140 tf -- 30 60 Ciss -- 620 -- Coss -- 124 -- Crss -- 95 -- IS -- -- 1.7 A VSD -- -- 1.2 V mΩ Dynamic Total Gate Charge Gate-Source Charge Gate-Drain Charge Turn-On Delay Time Turn-On Rise Time Turn-Off Delay Time Turn-Off Fall Time Input Capacitance Output Capacitance Reverse Transfer Capacitance VDS = 10V, ID = 6A, VGS = 4.5V VDD = 10V, RL = 10Ω, ID = 1A, VGEN = 4.5V, RG = 6Ω VDS = 10V, VGS = 0V, f = 1.0MHz nC nS pF Source-Drain Diode Max. Diode Forward Current Diode Forward Voltage IS = 1.7A, VGS = 0V Note : pulse test: pulse width <=300uS, duty cycle <=2% TSM9428 2-3 2005/08 rev. A SOP-8 Mechanical Drawing A DIM 9 16 B 1 P 8 G R C D TSM9428 M F K 3-3 A B C D F G K M P R SOP-8 DIMENSION MILLIMETERS INCHES MIN MAX MIN MAX 4.80 5.00 0.189 0.196 3.80 4.00 0.150 0.157 1.35 1.75 0.054 0.068 0.35 0.49 0.014 0.019 0.40 1.25 0.016 0.049 1.27 (typ) 0.05 (typ) 0.10 0.25 0.004 0.009 0o 7o 0o 7o 5.80 6.20 0.229 0.244 0.25 0.50 0.010 0.019 2005/08 rev. A