VISHAY SI7366DP-T1

Si7366DP
Vishay Siliconix
New Product
N-Channel 20-V (D-S) MOSFET
FEATURES
D TrenchFETr Power MOSFET
D Qg Optimized
PRODUCT SUMMARY
VDS (V)
20
rDS(on) (W)
ID (A)
0.0055 @ VGS = 10 V
20
0.009 @ VGS = 4.5 V
16
APPLICATIONS
D Synchronous Rectifier for DC/DC
PowerPAKr SO-8
D
S
6.15 mm
1
2
5.15 mm
S
3
S
4
G
G
D
8
7
D
6
Ordering Information: Si7366DP-T1
D
5
D
S
N-Channel MOSFET
Bottom View
ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED)
Parameter
Symbol
10 secs
Steady State
Drain-Source Voltage
VDS
20
Gate-Source Voltage
VGS
"20
Continuous Drain Current (TJ = 150_C)a
TA = 25_C
TA = 70_C
Continuous Source Current (Diode Conduction)a
IS
TA = 25_C
TA = 70_C
Operating Junction and Storage Temperature Range
PD
V
20
13
17
IDM
Pulsed Drain Current (10 ms Pulse Width)
Maximum Power Dissipationa
ID
10
50
4.1
1.4
5
1.7
3.2
1.1
TJ, Tstg
Unit
−55 to 150
A
W
_C
THERMAL RESISTANCE RATINGS
Parameter
M i
Maximum
JJunction-to-Ambient
ti t A bi ta
Maximum Junction-to-Case (Drain)
Symbol
t v 10 sec
Steady State
Steady State
RthJA
RthJC
Typical
Maximum
20
25
53
70
3.4
4.5
Unit
_C/W
C/W
Notes
a. Surface Mounted on 1” x 1” FR4 Board.
Document Number: 72296
S-31414—Rev. A, 07-Jul-03
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Si7366DP
Vishay Siliconix
New Product
SPECIFICATIONS (TJ = 25_C UNLESS OTHERWISE NOTED)
Parameter
Symbol
Test Condition
Min
VGS(th)
VDS = VGS, ID = 250 mA
1.0
IGSS
Typ
Max
Unit
3.0
V
VDS = 0 V, VGS = "20 V
"100
nA
VDS = 16 V, VGS = 0 V
1
VDS = 16 V, VGS = 0 V, TJ = 55_C
5
Static
Gate Threshold Voltage
Gate-Body Leakage
Zero Gate Voltage Drain Current
IDSS
On-State Drain Currenta
ID(on)
Drain-Source On-State Resistancea
Forward Transconductancea
Diode Forward Voltagea
30
VDS w 5 V, VGS = 10 V
rDS(on)
mA
A
VGS = 10 V, ID = 20 A
0.0045
0.0055
VGS = 4.5 V, ID = 16 A
0.0072
0.009
gfs
VDS = 6 V, ID = 20 A
48
VSD
IS = 4.5 A, VGS = 0 V
0.76
1.1
16
25
W
S
V
Dynamicb
Total Gate Charge
Qg
VDS = 10 V, VGS = 4.5 V, ID = 20 A
nC
Gate-Source Charge
Qgs
Gate-Drain Charge
Qgd
5.2
Gate Resistance
Rg
1.8
td(on)
21
32
tr
16
25
58
90
15
23
40
80
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
VDD = 10 V, RL = 10 W
ID ^ 1 A, VGEN = 10 V, RG = 6 W
td(off)
Fall Time
tf
Source-Drain Reverse Recovery Time
trr
6
IF = 4.1 A, di/dt = 100 A/ms
W
ns
Notes
a. Pulse test; pulse width v 300 ms, duty cycle v 2%.
b. Guaranteed by design, not subject to production testing.
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
Output Characteristics
60
Transfer Characteristics
60
50
40
40
I D − Drain Current (A)
I D − Drain Current (A)
VGS = 10 thru 4 V
50
30
20
3V
10
30
20
TC = 125_C
10
25_C
−55_C
0
0
1
2
3
4
VDS − Drain-to-Source Voltage (V)
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2
5
0
0.0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
4.0
VGS − Gate-to-Source Voltage (V)
Document Number: 72296
S-31414—Rev. A, 07-Jul-03
Si7366DP
Vishay Siliconix
New Product
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
On-Resistance vs. Drain Current
Capacitance
3000
0.012
2400
0.009
C − Capacitance (pF)
r DS(on) − On-Resistance ( W )
0.015
VGS = 4.5 V
0.006
VGS = 10 V
0.003
Ciss
1800
1200
Coss
Crss
600
0.000
0
0
10
20
30
40
50
0
4
ID − Drain Current (A)
r DS(on) − On-Resistance ( W)
(Normalized)
V GS − Gate-to-Source Voltage (V)
4
3
2
20
VGS = 10 V
ID = 20 A
1.4
1.2
1.0
1
0
0
3
6
9
12
15
18
0.8
−50
21
−25
0
Qg − Total Gate Charge (nC)
Source-Drain Diode Forward Voltage
50
75
100
125
150
On-Resistance vs. Gate-to-Source Voltage
0.030
r DS(on) − On-Resistance ( W )
TJ = 150_C
10
TJ = 25_C
0.024
0.018
ID = 20 A
0.012
0.006
0.000
1
0.00
25
TJ − Junction Temperature (_C)
60
I S − Source Current (A)
16
On-Resistance vs. Junction Temperature
1.6
VDS = 10 V
ID = 20 A
5
12
VDS − Drain-to-Source Voltage (V)
Gate Charge
6
8
0.2
0.4
0.6
0.8
VSD − Source-to-Drain Voltage (V)
Document Number: 72296
S-31414—Rev. A, 07-Jul-03
1.0
1.2
0
2
4
6
8
10
VGS − Gate-to-Source Voltage (V)
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Si7366DP
Vishay Siliconix
New Product
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
Threshold Voltage
Single Pulse Power
0.4
200
0.2
160
−0.0
120
Power (W)
V GS(th) Variance (V)
ID = 250 mA
−0.2
80
−0.4
40
−0.6
−0.8
−50
−25
0
25
50
75
100
125
0
0.001
150
0.01
TJ − Temperature (_C)
0.1
1
10
Time (sec)
100
Safe Operating Area, Junction-to-Case
Limited
by rDS(on)
1 ms
I D − Drain Current (A)
10
10 ms
1
100 ms
1s
10 s
0.1
dc
TC = 25_C
Single Pulse
0.01
0.1
1
10
100
VDS − Drain-to-Source Voltage (V)
Normalized Thermal Transient Impedance, Junction-to-Ambient
Normalized Effective Transient
Thermal Impedance
2
1
Duty Cycle = 0.5
0.2
Notes:
0.1
PDM
0.1
0.05
t1
t2
1. Duty Cycle, D =
t1
t2
2. Per Unit Base = RthJA = 53_C/W
0.02
3. TJM − TA = PDMZthJA(t)
Single Pulse
4. Surface Mounted
0.01
10−4
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4
10−3
10−2
10−1
1
Square Wave Pulse Duration (sec)
10
100
600
Document Number: 72296
S-31414—Rev. A, 07-Jul-03
Si7366DP
Vishay Siliconix
New Product
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
Normalized Thermal Transient Impedance, Junction-to-Case
Normalized Effective Transient
Thermal Impedance
2
1
Duty Cycle = 0.5
0.2
0.1
0.1
0.05
0.02
Single Pulse
0.01
10−4
Document Number: 72296
S-31414—Rev. A, 07-Jul-03
10−3
10−2
10−1
Square Wave Pulse Duration (sec)
1
10
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