Si7366DP Vishay Siliconix New Product N-Channel 20-V (D-S) MOSFET FEATURES D TrenchFETr Power MOSFET D Qg Optimized PRODUCT SUMMARY VDS (V) 20 rDS(on) (W) ID (A) 0.0055 @ VGS = 10 V 20 0.009 @ VGS = 4.5 V 16 APPLICATIONS D Synchronous Rectifier for DC/DC PowerPAKr SO-8 D S 6.15 mm 1 2 5.15 mm S 3 S 4 G G D 8 7 D 6 Ordering Information: Si7366DP-T1 D 5 D S N-Channel MOSFET Bottom View ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED) Parameter Symbol 10 secs Steady State Drain-Source Voltage VDS 20 Gate-Source Voltage VGS "20 Continuous Drain Current (TJ = 150_C)a TA = 25_C TA = 70_C Continuous Source Current (Diode Conduction)a IS TA = 25_C TA = 70_C Operating Junction and Storage Temperature Range PD V 20 13 17 IDM Pulsed Drain Current (10 ms Pulse Width) Maximum Power Dissipationa ID 10 50 4.1 1.4 5 1.7 3.2 1.1 TJ, Tstg Unit −55 to 150 A W _C THERMAL RESISTANCE RATINGS Parameter M i Maximum JJunction-to-Ambient ti t A bi ta Maximum Junction-to-Case (Drain) Symbol t v 10 sec Steady State Steady State RthJA RthJC Typical Maximum 20 25 53 70 3.4 4.5 Unit _C/W C/W Notes a. Surface Mounted on 1” x 1” FR4 Board. Document Number: 72296 S-31414—Rev. A, 07-Jul-03 www.vishay.com 1 Si7366DP Vishay Siliconix New Product SPECIFICATIONS (TJ = 25_C UNLESS OTHERWISE NOTED) Parameter Symbol Test Condition Min VGS(th) VDS = VGS, ID = 250 mA 1.0 IGSS Typ Max Unit 3.0 V VDS = 0 V, VGS = "20 V "100 nA VDS = 16 V, VGS = 0 V 1 VDS = 16 V, VGS = 0 V, TJ = 55_C 5 Static Gate Threshold Voltage Gate-Body Leakage Zero Gate Voltage Drain Current IDSS On-State Drain Currenta ID(on) Drain-Source On-State Resistancea Forward Transconductancea Diode Forward Voltagea 30 VDS w 5 V, VGS = 10 V rDS(on) mA A VGS = 10 V, ID = 20 A 0.0045 0.0055 VGS = 4.5 V, ID = 16 A 0.0072 0.009 gfs VDS = 6 V, ID = 20 A 48 VSD IS = 4.5 A, VGS = 0 V 0.76 1.1 16 25 W S V Dynamicb Total Gate Charge Qg VDS = 10 V, VGS = 4.5 V, ID = 20 A nC Gate-Source Charge Qgs Gate-Drain Charge Qgd 5.2 Gate Resistance Rg 1.8 td(on) 21 32 tr 16 25 58 90 15 23 40 80 Turn-On Delay Time Rise Time Turn-Off Delay Time VDD = 10 V, RL = 10 W ID ^ 1 A, VGEN = 10 V, RG = 6 W td(off) Fall Time tf Source-Drain Reverse Recovery Time trr 6 IF = 4.1 A, di/dt = 100 A/ms W ns Notes a. Pulse test; pulse width v 300 ms, duty cycle v 2%. b. Guaranteed by design, not subject to production testing. TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) Output Characteristics 60 Transfer Characteristics 60 50 40 40 I D − Drain Current (A) I D − Drain Current (A) VGS = 10 thru 4 V 50 30 20 3V 10 30 20 TC = 125_C 10 25_C −55_C 0 0 1 2 3 4 VDS − Drain-to-Source Voltage (V) www.vishay.com 2 5 0 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 VGS − Gate-to-Source Voltage (V) Document Number: 72296 S-31414—Rev. A, 07-Jul-03 Si7366DP Vishay Siliconix New Product TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) On-Resistance vs. Drain Current Capacitance 3000 0.012 2400 0.009 C − Capacitance (pF) r DS(on) − On-Resistance ( W ) 0.015 VGS = 4.5 V 0.006 VGS = 10 V 0.003 Ciss 1800 1200 Coss Crss 600 0.000 0 0 10 20 30 40 50 0 4 ID − Drain Current (A) r DS(on) − On-Resistance ( W) (Normalized) V GS − Gate-to-Source Voltage (V) 4 3 2 20 VGS = 10 V ID = 20 A 1.4 1.2 1.0 1 0 0 3 6 9 12 15 18 0.8 −50 21 −25 0 Qg − Total Gate Charge (nC) Source-Drain Diode Forward Voltage 50 75 100 125 150 On-Resistance vs. Gate-to-Source Voltage 0.030 r DS(on) − On-Resistance ( W ) TJ = 150_C 10 TJ = 25_C 0.024 0.018 ID = 20 A 0.012 0.006 0.000 1 0.00 25 TJ − Junction Temperature (_C) 60 I S − Source Current (A) 16 On-Resistance vs. Junction Temperature 1.6 VDS = 10 V ID = 20 A 5 12 VDS − Drain-to-Source Voltage (V) Gate Charge 6 8 0.2 0.4 0.6 0.8 VSD − Source-to-Drain Voltage (V) Document Number: 72296 S-31414—Rev. A, 07-Jul-03 1.0 1.2 0 2 4 6 8 10 VGS − Gate-to-Source Voltage (V) www.vishay.com 3 Si7366DP Vishay Siliconix New Product TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) Threshold Voltage Single Pulse Power 0.4 200 0.2 160 −0.0 120 Power (W) V GS(th) Variance (V) ID = 250 mA −0.2 80 −0.4 40 −0.6 −0.8 −50 −25 0 25 50 75 100 125 0 0.001 150 0.01 TJ − Temperature (_C) 0.1 1 10 Time (sec) 100 Safe Operating Area, Junction-to-Case Limited by rDS(on) 1 ms I D − Drain Current (A) 10 10 ms 1 100 ms 1s 10 s 0.1 dc TC = 25_C Single Pulse 0.01 0.1 1 10 100 VDS − Drain-to-Source Voltage (V) Normalized Thermal Transient Impedance, Junction-to-Ambient Normalized Effective Transient Thermal Impedance 2 1 Duty Cycle = 0.5 0.2 Notes: 0.1 PDM 0.1 0.05 t1 t2 1. Duty Cycle, D = t1 t2 2. Per Unit Base = RthJA = 53_C/W 0.02 3. TJM − TA = PDMZthJA(t) Single Pulse 4. Surface Mounted 0.01 10−4 www.vishay.com 4 10−3 10−2 10−1 1 Square Wave Pulse Duration (sec) 10 100 600 Document Number: 72296 S-31414—Rev. A, 07-Jul-03 Si7366DP Vishay Siliconix New Product TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) Normalized Thermal Transient Impedance, Junction-to-Case Normalized Effective Transient Thermal Impedance 2 1 Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 Single Pulse 0.01 10−4 Document Number: 72296 S-31414—Rev. A, 07-Jul-03 10−3 10−2 10−1 Square Wave Pulse Duration (sec) 1 10 www.vishay.com 5