Si7898DP New Product Vishay Siliconix N-Channel 150-V (D-S) MOSFET FEATURES PRODUCT SUMMARY VDS (V) 150 rDS(on) (W) ID (A) 0.085 @ VGS = 10 V 4.8 0.095 @ VGS = 6.0 V 4.5 D TrenchFETr Power MOSFET for Fast Switching D PWM Optimized D New Low Thermal Resistance PowerPAKt Package with Low 1.07-mm Profile APPLICATIONS D DC/DC Power Supply Primary Side Switch D Automotive and Industrial Motor Drives PowerPAKt SO-8 D S 6.15 mm 5.15 mm 1 S 2 S 3 G 4 G D 8 D 7 D 6 D S 5 N-Channel MOSFET Bottom View ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED) Parameter Symbol 10 secs Steady State Drain-Source Voltage VDS 150 Gate-Source Voltage VGS "20 Continuous Drain Current (TJ = 150_C) _ a TA = 25_C TA = 70_C Pulsed Drain Current Avalanch Current L = 0.1 mH Continuous Source Current (Diode Conduction)a Maximum Power Dissipationa TA = 70_C Operating Junction and Storage Temperature Range 3.0 3.8 2.4 IDM 25 IAS 10 IS TA = 25_C V 4.8 ID PD A 4.1 1.6 5.0 1.9 3.2 1.2 TJ, Tstg Unit W _C –55 to 150 THERMAL RESISTANCE RATINGS Parameter Symbol t v 10 sec Maximum Junction-to-Ambienta Maximum Junction-to-Case (Drain) Steady State Steady State RthJA RthJC Typical Maximum 20 25 52 65 2.1 2.6 Unit _C/W C/W Notes a. Surface Mounted on 1” x 1” FR4 Board. Document Number: 71873 S-20827—Rev. A, 17-Jun-02 www.vishay.com 1 Si7898DP New Product Vishay Siliconix SPECIFICATIONS (TJ = 25_C UNLESS OTHERWISE NOTED) Parameter Symbol Test Condition Min VGS(th) VDS = VGS, ID = 250 mA 2.0 IGSS Typ Max Unit 4.0 V VDS = 0 V, VGS = "20 V "100 nA VDS = 120 V, VGS = 0 V 1 VDS = 120 V, VGS = 0 V, TJ = 55_C 5 Static Gate Threshold Voltage Gate-Body Leakage Zero Gate Voltage Drain Current IDSS On-State Drain Currenta ID(on) Drain-Source On-State Resistancea 25 A VGS = 10 V, ID = 3.5 A 0.068 0.085 VGS = 6.0 V, ID = 3.0 A 0.076 0.095 gfs VDS = 15 V, ID = 5 A 15 VSD IS = 2.5 A, VGS = 0 V 0.75 1.2 17 21 VDS = 75 V, VGS = 10 V, ID = 3.5 A 3.2 rDS(on) Forward Transconductancea Diode Forward VDS w 5 V, VGS = 10 V Voltagea m mA W S V Dynamicb Total Gate Charge Qg Gate-Source Charge Qgs nC Gate-Drain Charge Qgd 6.0 Turn-On Delay Time td(on) 9.0 14 tr 10 15 24 35 25 Rise Time Turn-Off Delay Time VDD = 75 V, RL = 21 W ID ^ 3.5 A, VGEN = 10 V, RG = 6 W td(off) Fall Time tf 17 Gate Resistance Rg 0.85 Source-Drain Reverse Recovery Time trr W 45 IF = 2.5 A, di/dt = 100 A/ms ns 70 ns Notes a. Pulse test; pulse width v 300 ms, duty cycle v 2%. b. Guaranteed by design, not subject to production testing. TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) Output Characteristics Transfer Characteristics 25 25 VGS = 10 thru 6 V 20 I D – Drain Current (A) I D – Drain Current (A) 20 15 5V 10 5 15 10 TC = 125_C 5 25_C 3, 4 V 0 0 2 4 6 8 VDS – Drain-to-Source Voltage (V) www.vishay.com 2 –55_C 0 10 0 1 2 3 4 5 6 VGS – Gate-to-Source Voltage (V) Document Number: 71873 S-20827—Rev. A, 17-Jun-02 Si7898DP New Product Vishay Siliconix TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) On-Resistance vs. Drain Current Capacitance 1200 0.12 0.09 C – Capacitance (pF) r DS(on) – On-Resistance ( W ) 0.15 VGS = 6 V 0.06 VGS = 10 V Ciss 900 600 300 Crss 0.03 Coss 0.00 0 0 5 10 15 20 25 0 30 ID – Drain Current (A) Gate Charge 120 150 On-Resistance vs. Junction Temperature 3.0 VDS = 75 V ID = 3.5 A r DS(on) – On-Resistance ( W) (Normalized) V GS – Gate-to-Source Voltage (V) 90 VDS – Drain-to-Source Voltage (V) 20 16 12 8 4 VGS = 10 V ID = 3.5 A 2.5 2.0 1.5 1.0 0.5 0 0 6 12 18 24 0.0 –50 30 –25 0 Qg – Total Gate Charge (nC) Source-Drain Diode Forward Voltage 50 75 100 125 150 On-Resistance vs. Gate-to-Source Voltage 0.25 r DS(on) – On-Resistance ( W ) TJ = 150_C 10 TJ = 25_C 1 0.0 25 TJ – Junction Temperature (_C) 50 I S – Source Current (A) 60 0.20 ID = 3.5 A 0.15 0.10 0.05 0.00 0.2 0.4 0.6 0.8 1.0 VSD – Source-to-Drain Voltage (V) Document Number: 71873 S-20827—Rev. A, 17-Jun-02 1.2 0 2 4 6 8 10 VGS – Gate-to-Source Voltage (V) www.vishay.com 3 Si7898DP New Product Vishay Siliconix TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) Threshold Voltage Single Pulse Power, Juncion-To-Ambient 1.0 200 160 ID = 250 mA Power (W) V GS(th) Variance (V) 0.5 0.0 120 –0.5 80 –1.0 40 –1.5 –50 0 –25 0 25 50 75 100 125 150 0.1 0.01 0.001 10 1 Time (sec) TJ – Temperature (_C) Safe Operating Area 100 10 ms Limited by rDS(on) I D – Drain Current (A) 10 100 ms 1 ms 1 10 ms 100 ms TC = 25_C Single Pulse 0.1 1s 10 s 0.01 100 s, dc 0.01 0.1 1 10 100 1000 VDS – Drain-to-Source Voltage (V) Normalized Thermal Transient Impedance, Junction-to-Ambient Normalized Effective Transient Thermal Impedance 2 1 Duty Cycle = 0.5 0.2 Notes: 0.1 PDM 0.1 0.05 t1 t2 1. Duty Cycle, D = 0.02 t1 t2 2. Per Unit Base = RthJA = _C/W 3. TJM – TA = PDMZthJA(t) Single Pulse 4. Surface Mounted 0.01 10–4 www.vishay.com 4 10–3 10–2 10–1 1 Square Wave Pulse Duration (sec) 10 100 600 Document Number: 71873 S-20827—Rev. A, 17-Jun-02 Si7898DP New Product Vishay Siliconix TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) Normalized Thermal Transient Impedance, Junction-to-Case 2 Normalized Effective Transient Thermal Impedance 1 Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 Single Pulse 0.01 10–4 Document Number: 71873 S-20827—Rev. A, 17-Jun-02 10–3 10–2 10–1 Square Wave Pulse Duration (sec) 1 10 www.vishay.com 5