Si7356DP Vishay Siliconix New Product N-Channel 30-V (D-S) MOSFET FEATURES D Ultra-Low On-Resistance Using High Density TrenchFETr Gen II Power MOSFET Technology D New Low Thermal Resistance PowerPAKr Package with Low 1.07-mm Profile PRODUCT SUMMARY VDS (V) 30 rDS(on) (W) ID (A) 0.003 @ VGS = 10 V 30 0.004 @ VGS = 4.5 V 27 APPLICATIONS D Low-Side DC/DC Conversion - Notebook - Server - Workstation D Point-of-Load Conversion PowerPAK SO-8 S 6.15 mm 1 2 D 5.15 mm S 3 S 4 G D G 8 7 D 6 D 5 D S Bottom View N-Channel MOSFET Ordering Information: Si7356DP-T1 ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED) Parameter Symbol 10 secs Steady State Drain-Source Voltage VDS 30 Gate-Source Voltage VGS "20 Continuous Drain Current (TJ = 150_C)a TA = 25_C TA = 70_C Pulsed Drain Current (10 ms Pulse Width) IS TA = 25_C TA = 70_C Operating Junction and Storage Temperature Range PD V 30 18 25 IDM Continuous Source Current (Diode Conduction)a Maximum Power Dissipationa ID 15 70 4.5 1.8 5.4 1.9 3.4 1.2 TJ, Tstg Unit - 55 to 150 A W _C THERMAL RESISTANCE RATINGS Parameter M i Maximum JJunction-to-Ambient ti t A bi ta Maximum Junction-to-Case (Drain) Symbol t v 10 sec Steady State Steady State RthJA RthJC Typical Maximum 18 23 50 65 1.0 1.5 Unit _C/W C/W Notes a. Surface Mounted on 1” x 1” FR4 Board. Document Number: 72222 S-32039—Rev. B, 13-Oct-03 www.vishay.com 1 Si7356DP Vishay Siliconix New Product MOSFET SPECIFICATIONS (TJ = 25_C UNLESS OTHERWISE NOTED) Parameter Symbol Test Condition Min VGS(th) VDS = VGS, ID = 250 mA 1.0 IGSS Typ Max Unit 3.0 V VDS = 0 V, VGS = "20 V "100 nA VDS = 24 V, VGS = 0 V 1 VDS = 24 V, VGS = 0 V, TJ = 55_C 5 Static Gate Threshold Voltage Gate-Body Leakage Zero Gate Voltage Drain Current IDSS On-State Drain CurrentNO TAG ID(on) Drain-Source On-State ResistanceNO TAG Forward TransconductanceNO TAG Diode Forward VoltageNO TAG 30 VDS w 5 V, VGS = 10 V rDS(on) mA A VGS = 10 V, ID = 25 A 0.0024 0.003 VGS = 4.5 V, ID = 19 A 0.0032 0.004 gfs VDS = 15 V, ID = 25 A 110 VSD IS = 2.9 A, VGS = 0 V 0.72 1.1 45 70 W S V DynamicNO TAG Total Gate Charge Qg Gate-Source Charge Qgs Gate-Drain Charge Qgd 16 Gate Resistance RG 1.1 td(on) 27 40 tr 21 35 107 160 43 65 45 70 Turn-On Delay Time Rise Time Turn-Off Delay Time VDS = 15 V, VGS = 4.5 V, ID = 20 A VDD = 15 V, RL = 15 W ID ^ 1 A, VGEN = 10 V, RG = 6 W td(off) Fall Time tf Source-Drain Reverse Recovery Time trr 20 IF = 2.9 A, di/dt = 100 A/ms nC W ns Notes a. Pulse test; pulse width v 300 ms, duty cycle v 2%. b. Guaranteed by design, not subject to production testing. TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) Output Characteristics 60 VGS = 10 thru 4 V 50 40 I D - Drain Current (A) I D - Drain Current (A) 50 Transfer Characteristics 60 30 20 10 40 30 20 TC = 125_C 10 25_C 3V - 55_C 0 0 2 4 6 8 VDS - Drain-to-Source Voltage (V) www.vishay.com 2 10 0 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 VGS - Gate-to-Source Voltage (V) Document Number: 72222 S-32039—Rev. B, 13-Oct-03 Si7356DP Vishay Siliconix New Product TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) On-Resistance vs. Drain Current Capacitance 8500 0.004 Ciss 6800 VGS = 4.5 V C - Capacitance (pF) r DS(on) - On-Resistance ( W ) 0.005 0.003 VGS = 10 V 0.002 5100 3400 0.001 1700 0.000 0 Coss Crss 0 10 20 30 40 50 0 6 ID - Drain Current (A) r DS(on) - On-Resistance (W) (Normalized) V GS - Gate-to-Source Voltage (V) 4 3 2 1 0 0 10 20 30 40 50 1.2 1.0 0.8 0.6 - 50 60 - 25 0 Source-Drain Diode Forward Voltage 50 75 100 125 150 On-Resistance vs. Gate-to-Source Voltage 0.015 r DS(on) - On-Resistance ( W ) I S - Source Current (A) 25 TJ - Junction Temperature (_C) 50 10 TJ = 150_C TJ = 25_C 0.012 ID = 25 A 0.009 0.006 0.003 0.000 0.1 0.00 30 VGS = 10 V ID = 25 A 1.4 Qg - Total Gate Charge (nC) 1 24 On-Resistance vs. Junction Temperature 1.6 VDS = 15 V ID = 20 A 5 18 VDS - Drain-to-Source Voltage (V) Gate Charge 6 12 0.2 0.4 0.6 0.8 VSD - Source-to-Drain Voltage (V) Document Number: 72222 S-32039—Rev. B, 13-Oct-03 1.0 1.2 0 2 4 6 8 10 VGS - Gate-to-Source Voltage (V) www.vishay.com 3 Si7356DP Vishay Siliconix New Product TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) Threshold Voltage Single Pulse Power 0.4 200 ID = 250 mA 160 - 0.0 Power (W) V GS(th) Variance (V) 0.2 - 0.2 - 0.4 120 80 - 0.6 40 - 0.8 - 1.0 - 50 - 25 0 25 50 75 100 125 0 0.001 150 0.01 TJ - Temperature (_C) 0.1 1 10 Time (sec) 100 Safe Operating Area, Junction-to-Case Limited by rDS(on) 1 ms 10 10 ms 100 ms 1 1s 0.1 10 s TC = 25_C Single Pulse dc 0.01 10 0.01 0.1 1 10 100 VDS - Drain-to-Source Voltage (V) Normalized Thermal Transient Impedance, Junction-to-Ambient Normalized Effective Transient Thermal Impedance 2 1 Duty Cycle = 0.5 0.2 Notes: 0.1 PDM 0.1 0.05 t1 t2 1. Duty Cycle, D = 0.02 t1 t2 2. Per Unit Base = RthJA = 50_C/W 3. TJM - TA = PDMZthJA(t) 4. Surface Mounted Single Pulse 0.01 10 -4 www.vishay.com 4 10 -3 10 -2 10 -1 1 Square Wave Pulse Duration (sec) 10 100 600 Document Number: 72222 S-32039—Rev. B, 13-Oct-03 Si7356DP Vishay Siliconix New Product TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) Normalized Thermal Transient Impedance, Junction-to-Case 2 Normalized Effective Transient Thermal Impedance 1 Duty Cycle = 0.5 0.2 0.1 0.1 Single Pulse 0.05 0.02 0.01 10 -4 Document Number: 72222 S-32039—Rev. B, 13-Oct-03 10 -3 10 -2 10 -1 Square Wave Pulse Duration (sec) 1 10 www.vishay.com 5