UMH14N dual digital transistors (NPN+ NPN) SOT-363 FEATURES Two DTC144T chips in a package. 1 Marking: H14 Equivalent circuit Absolute maximum ratings (Ta=25℃) Symbol Parameter Value Units VCBO Collector-base Voltage 50 V VCEO Collector-emitter Voltage 50 V VEBO Emitter-base Voltage 5 V IC Collector current 100 mA PD Power dissipation 150 mW TJ Junction temperature 150 ℃ Tstg Storage temperature -55~+150 ℃ ELECTRICAL CHARACTERISTICS (Ta=25℃) Parameter Symbol Test conditions Min Typ Max Unit Collector-base breakdown voltage V(BR)CBO IC=50μA, IE=0 50 V Collector-emitter breakdown voltage V(BR)CEO IC=1mA, IB=0 50 V Emitter-base breakdown voltage V(BR)EBO IE=50μA, IC=0 5 V Collector cut-off current ICBO VCB=50V, IE=0 500 nA Emitter cut-off current IEBO VEB=4V, IC=0 500 nA DC current transfer ration hFE VCE =5V, IC=1mA Collector-emitter saturation voltage VCE(sat) Transition frequency fT Input resistance R1 100 600 IC=5mA, IB=0.5mA 0.3 VCE =10V, IC=5mA, f =100MHz 250 32.9 V MHz 61.1 KΩ 1 JinYu semiconductor www.htsemi.com Date:2011/ 05